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2SA1718 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SA1718
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 20 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 5 A

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 2000
   Paquete / Cubierta: TO220F
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2SA1718 Datasheet (PDF)

 ..1. Size:153K  jmnic
2sa1718.pdf pdf_icon

2SA1718

JMnic Product Specification Silicon PNP Power Transistors 2SA1718 DESCRIPTION With TO-220F package High DC current gain. Low collector saturation voltage. DARLINGTON APPLICATIONS Ideal for motor drviers and solenoid drivers application PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings

 ..2. Size:190K  inchange semiconductor
2sa1718.pdf pdf_icon

2SA1718

isc Silicon PNP Power Transistor 2SA1718DESCRIPTIONLow Collector Saturation Voltage:V = -0.5(V)(Max)@I = -2ACE(sat) CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vo

 8.1. Size:148K  sanyo
2sa1710 2sc4490.pdf pdf_icon

2SA1718

Ordering number:EN3097PNP/NPN Epitaxial Planar Silicon Transistors2SA1710/2SC4490High-Definition CRT DisplayVideo Output ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO 300V).unit:mm Excellent high frequency characteristic.2064 Adoption of MBIT process.[2SA1710/2SC4490]E : EmitterC : CollectorB : Base( ) : 2SA1710SANYO : NMPSpec

 8.2. Size:141K  nec
2sa1714.pdf pdf_icon

2SA1718

DATA SHEETSILICON TRANSISTOR2SA1714PNP SILICON EPITAXIAL POWER TRANSISTOR(DARLINGTON CONNECTION)FOR HIGH-SPEED SWITCHINGThe 2SA1714 is a high-speed darlington power transistor. This PACKAGE DRAWING (UNIT: mm)transistor is ideal for high-precision control such as PWM control forpulse mortors or blushless mortor of OA and FA equipment.FEATURES High DC current amplifiers due

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SC4452 | 3DA4 | 2SC3266 | D33J24 | 2SC4468 | AF114N | KT8121A-2

 

 
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