2SA1988 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1988
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100 W
Tensión colector-base (Vcb): 200 V
Tensión colector-emisor (Vce): 200 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 7 A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 40 MHz
Ganancia de corriente contínua (hFE): 70
Encapsulados: TO3PN
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2SA1988 datasheet
..1. Size:47K nec
2sa1988.pdf 
DATA SHEET Silicon Power Transistor 2SA1988 PNP SILICON TRANSISTOR POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SA1988 is PNP Silicon Power Transistor that designed for audio frequency power amplifier. 4.7 MAX. 15.7 MAX. 3.2 0.2 1.5 FEATURES 4 High Voltage VCEO = -200 V DC Current Gain hFE = 70 to 200 TO-3P Package 1 2 3 ORDERING INFORMAT
..2. Size:157K savantic
2sa1988.pdf
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1988 DESCRIPTION With TO-3PN package High collector-emitter voltage APPLICATIONS For audio frequency power amplifier and industrial use PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum rati
..3. Size:177K jmnic
2sa1988.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1988 DESCRIPTION With TO-3PN package High collector-emitter voltage APPLICATIONS For audio frequency power amplifier and industrial use PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYM
..4. Size:189K inchange semiconductor
2sa1988.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1988 DESCRIPTION High Voltage TO-3P package 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS The 2SA1988 is PNP silicon power transistor that designed for audio frequency power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE
8.3. Size:244K mcc
2sa1980-o.pdf
2SA1980-O MCC Micro Commercial Components TM 2SA1980-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1980-G Phone (818) 701-4933 Fax (818) 701-4939 2SA1980-L Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Low Collector Saturation Voltage V =0.3V(Max.) CE(sat) Low Output Capacitance
8.4. Size:244K mcc
2sa1980-y.pdf
2SA1980-O MCC Micro Commercial Components TM 2SA1980-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1980-G Phone (818) 701-4933 Fax (818) 701-4939 2SA1980-L Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Low Collector Saturation Voltage V =0.3V(Max.) CE(sat) Low Output Capacitance
8.5. Size:244K mcc
2sa1980-l.pdf
2SA1980-O MCC Micro Commercial Components TM 2SA1980-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1980-G Phone (818) 701-4933 Fax (818) 701-4939 2SA1980-L Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Low Collector Saturation Voltage V =0.3V(Max.) CE(sat) Low Output Capacitance
8.6. Size:244K mcc
2sa1980-g.pdf
2SA1980-O MCC Micro Commercial Components TM 2SA1980-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1980-G Phone (818) 701-4933 Fax (818) 701-4939 2SA1980-L Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Low Collector Saturation Voltage V =0.3V(Max.) CE(sat) Low Output Capacitance
8.7. Size:42K panasonic
2sa1982 e.pdf
Transistor 2SA1982 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Unit mm Complementary to 2SC5346 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Satisfactory foward current transfer ratio hFE collector current IC characteristics. 0.65 max. High collector to emitter voltage VCEO. Small collector output capacitance Cob. Mak
8.8. Size:37K panasonic
2sa1982.pdf
Transistor 2SA1982 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Unit mm Complementary to 2SC5346 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Satisfactory foward current transfer ratio hFE collector current IC characteristics. 0.65 max. High collector to emitter voltage VCEO. Small collector output capacitance Cob. Mak
8.9. Size:282K auk
2sa1980sf.pdf
2SA1980SF PNP Silicon Transistor PIN Connection Description General small signal amplifier 3 Features Low collector saturation voltage 1 VCE(sat)=-0.3V(Max.) 2 Low output capacitance Cob=4pF(Typ.) SOT-23F Complementary pair with 2SC5343SF Ordering Information Type NO. Marking Package Code CA 2SA1980SF SOT-23F
8.10. Size:227K auk
2sa1980uf.pdf
2SA1980UF PNP Silicon Transistor PIN Connection Description General small signal amplifier 3 Features 1 Low collector saturation voltage 2 VCE(sat)=-0.3V(Max.) Low output capacitance Cob=4pF(Typ.) SOT-323F Complementary pair with 2SC5343UF Ordering Information Type NO. Marking Package Code C 2SA1980UF SOT-323F Device Cod
8.11. Size:237K auk
2sa1980n.pdf
2SA1980N Semiconductor Semiconductor PNP Silicon Transistor Description General small signal amplifier Features Low collector saturation voltage VCE(sat)=-0.3V(Max.) Low output capacitance Cob=4pF(Typ.) Complementary pair with 2SC5343N Ordering Information Type NO. Marking Package Code 2SA1980N A1980 TO-92N Outline Dimensions unit mm 4.20 4
8.12. Size:274K auk
2sa1980u.pdf
2SA1980U PNP Silicon Transistor Description PIN Connection General small signal amplifier Features Low collector saturation voltage 3 VCE(sat)=-0.3V(Max.) 2 1 Low output capacitance Cob=4pF(Typ.) Complementary pair with 2SC5343U SOT-323 Ordering Information Type NO. Marking Package Code C 2SA1980U SOT-323 Dev
8.13. Size:365K auk
2sa1981s.pdf
2SA1981S PNP Silicon Transistor Description C Audio power amplifier application Features B C High h h =100 320 FE FE B Complementary pair with 2SC5344S E E Ordering Information Part Number Marking Package SOT-23 EA 2SA1981S SOT-23 * Device Code hFE Rank Year & Week Code Factory Management Code Ab
8.14. Size:233K auk
2sa1980.pdf
2SA1980 PNP Silicon Transistor PIN Connection Description General small signal amplifier E Features B Low collector saturation voltage VCE(sat)=-0.3V(Max.) Low output capacitance Cob=4pF(Typ.) C Complementary pair with 2SC5343 TO-92 Ordering Information Type NO. Marking Package Code 2SA1980 A1980 TO-92 Absolute Maximum Ratings (Ta=25 C) C
8.15. Size:241K auk
2sa1980ef.pdf
2SA1980EF PNP Silicon Transistor Description PIN Connection General small signal amplifier Features 3 Low collector saturation voltage VCE(sat)=-0.3V(Max.) Low output capacitance Cob=4pF(Typ.) 1 Complementary pair with 2SC5343EF 2 SOT-523F Ordering Information Type NO. Marking Package Code A 2SA1980EF SOT-523F Device C
8.16. Size:376K auk
2sa1980s.pdf
2SA1980S PNP Silicon Transistor Description C General small signal amplifier Features B C Low collector saturation voltage V = 0.3V(Max.) CE(sat) B Low output capacitance C = 4pF(Typ.) ob E Complementary pair with 2SC5343S E Ordering Information SOT-23 Part Number Marking Package CA 2SA1980S SOT-23 *
8.17. Size:225K auk
2sa1981n.pdf
2SA1981N Semiconductor Semiconductor PNP Silicon Transistor Description Audio power amplifier application Features High hFE hFE=100 320 Complementary pair with 2SC5344N Ordering Information Type NO. Marking Package Code 2SA1981N A1981 TO-92N Outline Dimensions unit mm 4.20 4.40 2.25 Max. 0.52 Max. 0.90 Max. 1.27 Typ. 0.40 Max. 1 2 3 3.55 Typ
8.18. Size:217K auk
2sa1980e.pdf
2SA1980E PNP Silicon Transistor PIN Connection Description General small signal amplifier Features 3 Low collector saturation voltage VCE(sat)=-0.3V(Max.) 1 Low output capacitance Cob=4pF(Typ.) 2 Complementary pair with 2SC5343E SOT-523 Ordering Information Type NO. Marking Package Code A 2SA1980E SOT-523 Device Code
8.19. Size:269K auk
2sa1981sf.pdf
2SA1981SF PNP Silicon Transistor Description PIN Connection Audio power amplifier application 3 Features High hFE hFE=100 320 1 Complementary pair with 2SC5344SF 2 SOT-23F Ordering Information Type NO. Marking Package Code EA 2SA1981SF SOT-23F Device Code hFE Rank Year&Week Code Absolute maximum ratings (Ta=25 C
8.20. Size:220K auk
2sa1981.pdf
2SA1981 PNP Silicon Transistor Description PIN Connection Audio power amplifier application E B Features C High hFE hFE=100 320 TO-92 Complementary pair with 2SC5344 Ordering Information Type NO. Marking Package Code 2SA1981 A1981 TO-92 Absolute maximum ratings (Ta=25 C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -35 V Collec
8.21. Size:178K auk
2sa1980m.pdf
2SA1980M PNP Silicon Transistor Description PIN Connection General small signal amplifier Features Low collector saturation voltage VCE(sat)=-0.3V(Max.) Low output capacitance Cob=4pF(Typ.) Complementary pair with 2SC5343M TO-92M Ordering Information Type NO. Marking Package Code 2SA1980M 1980 TO-92M Absolute maximum ratings Ta=25 C Characte
8.22. Size:276K secos
2sa1980.pdf
2SA1980 -150 mA, -50 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Low collector saturation voltage VCE(sat) =-0.3V(Max.) Low output capacitance Cob=4pF (Typ.) G H Complements of the 2SC5343 1 Emitter 1 1 1 2 Collector 2 2 2 J 3 Base 3 3 3 CLASSIF
8.23. Size:77K secos
2sa1981.pdf
2SA1981 -0.8 A, -35 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High DC Current Gain Complementary Pair with 2SC5344 G H Emitter Collector CLASSIFICATION OF hFE Base J Product-Rank 2SA1981-O 2SA1981-Y A D Millimeter Range 100 200 160 320
8.24. Size:136K isahaya
2sa1989.pdf
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
8.25. Size:152K jmnic
2sa1987.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1987 DESCRIPTION With TO-3PL package Complement to type 2SC5359 High collector voltage APPLICATIONS Power amplifier applications Recommended for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified ou
8.26. Size:207K jmnic
2sa1986.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1986 DESCRIPTION With TO-3P(I) package Complement to type 2SC5358 APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol
8.27. Size:182K lge
2sa1980.pdf
2SA1980(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Low collector saturation voltage VCE(sat) =-0.3V(Max.) Low output capacitance Cob =4pF (Typ.) Complementary pair with 2SC5343 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V
8.28. Size:1003K kexin
2sa1980uf.pdf
SMD Type Transistors PNP Transistors 2SA1980UF Features Low collector saturation voltage Low output capacitance Cob=4pF(Typ.) Complements to 2SC5343UF 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Coll
8.29. Size:738K kexin
2sa1981sf.pdf
SMD Type or SMD Type TransistICs PNP Transistors 2SA1981SF SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features High hFE hFE=100 to 320 Complementary pair with 2SC5344SF 1 2 +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -35 V Collector-emitter vo
8.30. Size:219K inchange semiconductor
2sa1987.pdf
isc Silicon PNP Power Transistor 2SA1987 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = -230V(Min) (BR)CEO Complement to Type 2SC5359 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency amp
8.31. Size:220K inchange semiconductor
2sa1986.pdf
isc Silicon PNP Power Transistor 2SA1986 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = -230V(Min) (BR)CEO Complement to Type 2SC5358 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amp
Otros transistores... 2SA1718, 2SA1757, 2SA1758, 2SA1788, 2SA1789, 2SA1878, 2SA1879, 2SA1880, TIP32C, 2SA2031, 2SB1069A, 2SB1071A, 2SB1086A, 2SB1393A, 2SB1508, 2SB1548, 2SB1548A
