2SB1568 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SB1568TransistorsTransistors2SD2399(96-670-B422)(96-825-D422)300

isc Silicon PNP Darlington Power Transistor 2SB1568DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -2A)FE CE CComplement to Type 2SD2399Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM

2SB1580 / 2SB1316 / 2SB1567TransistorsPower Transistor (-100V , -2A)2SB1580 / 2SB1316 / 2SB1567 Features External dimensions (Units : mm)1) Darlington connection for high DC current gain.2SB15804.02) Built-in resistor between base and emitter.1.0 2.5 0.53) Built-in damper diode.(1)4) Complements the 2SD2195 / 2SD1980 / 2SD2398.(2)(3)(1) Base(Gate)(2) Collector(Dr

2SB1561DatasheetMiddle Power Transistor (-60V/-2A)lOutlinel SOT-89 Parameter Value SC-62 VCEO-60VIC-2AMPT3lFeatures lInner circuitl l1)Low saturation voltage, tipicallyVCE(sat)=-150mV at IC/IB=-1A/-50mA.2)Collector-emitter voltage=-60V3)PD=2W (Mounted on a ceramic board(40400.7mm) ).4)Complementary NPN Types

2SB1565TransistorsPower Transistor (-60V, -3A)2SB1565 Features External dimensions (Units : mm)1) Low VCE(sat). (Typ.-0.3V at IC/IB = -2/-0.2A)2) Excellent DC current gain characteristics. 10.0 4.53.2 2.8 3) Wide SOA (safe operating area).1.21.30.80.75 ( )2.54 2.54 2.6 (1) Base Gate(1) (2) (3)( )(2) Collector Drain(1) (2) (3) (3) Emitter(Source)ROHM : TO-

2SB1566TransistorsTransistors2SD2395(94L-459-B350)(94L-1101-D350)296

2SB1275 / 2SB1236A / 2SB1569A / 2SB1186ATransistorsTransistors2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A(96-612-A58)(96-744-C58)277

JMnic Product Specification Silicon PNP Power Transistors 2SB1565 DESCRIPTION With TO-220F package Excellent DC current gain characteristics Low collector saturation voltage Wide SOA (safe operating area) Complement to type 2SD2394 PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbolAbsolute maximum ratings (Ta=25

JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1560 DESCRIPTION With TO-3PN package Complement to type 2SD2390 APPLICATIONS Audio ,regulator and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER

JMnic Product Specification Silicon PNP Power Transistors 2SB1566 DESCRIPTION With TO-220F package Excellent DC current gain characteristics Low collector saturation voltage Wide SOA (safe operating area) Complement to type 2SD2395 PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbolAbsolute maximum ratings (Ta=25

E(70)BDarlington 2SB1560Equivalent circuitCSilicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390)Application : Audio, Series Regulator and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)RatingsSymbol Unit Symbol Conditions Ratings Unit0.24.80.415.6VCBO 160 VCB=160

ST 2SB1561U PNP Silicon Epitaxial Planar Transistor Medium Power Transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 60 VCollector Emitter Voltage -VCEO 60 VEmitter Base Voltage -VEBO 6 VCollector Current - DC -IC 2 A Collector Current - Pulse 1) -ICP 6 0.5 Total Power Dissipation Ptot W 2 2) Junction Temperature T

Product specification2SB1561-QSOT-89 Unit: mm+0.1 +0.14.50-0.1 1.50-0.1 Features+0.11.80-0.1 Collector Current Capability IC=-2ACollector Emitter Voltage VCEO=-60V2 3Low saturation Voltage typically 1+0.1 +0.1 +0.10.48-0.1 0.53-0.1 0.44-0.1 VCE (SAT)=-0.15Vat IC/IB=-1A/-50mA1. Base1. Source1 Base+0.13.00-0.12 Collector2. Collector2. Drai

SMD Type TransistorsPNP Transistors2SB1561SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-60V Complements the 2SD23910.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -

isc Silicon PNP Power Transistor 2SB1569DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOComplement to Type 2SD2400Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -120

isc Silicon PNP Power Transistor 2SB1562DESCRIPTIONHigh DC Current Gain-: h = 300~1000@ (V = -5V , I = -0.5A)FE CE CLow Saturation Voltage-: V = -0.5V(TYP)@ (I = -2A, I = -20mA)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

isc Silicon PNP Power Transistor 2SB1565DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOCollector Power Dissipation-: P = 25 W@ T = 25C CLow Collector Saturation VoltageWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifications.ABSOLUTE M

isc Silicon PNP Darlington Power Transistor 2SB1560DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@I = -7AFE CLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -7ACE(sat) CComplement to Type 2SD2390Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio, series regulator and general purposeapplicati

isc Silicon PNP Power Transistor 2SB1566DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -1.0V(Max)@ (I = -2A, I = -0.2A)CE(sat) C BWide Area of Safe OperationComplement to Type 2SD2395Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amp

isc Silicon PNP Darlington Power Transistor 2SB1567DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current GainBuilt-in resistor between base and emitterComplement to Type 2SD2398Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power switching applications.ABSOLUTE MAX