2N5877 Todos los transistores

 ..1. Size:170K  motorola
 2n5877 2n5878.pdf

Order this document MOTOROLA by 2N5877/D SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 Complementary Silicon 2N5878 High-Power Transistors . . . designed for general purpose power amplifier and switching applications. 10 AMPERE Low Collector Emitter Saturation Voltage COMPLEMENTARY VCE(sat) = 1.0 Vdc (Max) @ IC = 5.0 Adc SILICON Low Leakage Current POWER TRANSISTOR

 ..2. Size:71K  central
 2n5875 2n5876 2n5877 2n5878.pdf

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

 ..3. Size:117K  inchange semiconductor
 2n5877 2n5878.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5877 2N5878 DESCRIPTION With TO-3 package Low collector saturation voltage Complement to type 2N5875 2N5876 APPLICATIONS For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absol

 9.1. Size:252K  motorola
 2n5879 2n5880 2n5881 2n5882.pdf

Order this document MOTOROLA by 2N5879/D SEMICONDUCTOR TECHNICAL DATA PNP 2N5879 Complementary Silicon 2N5880* High-Power Transistors NPN . . . designed for general purpose power amplifier and switching applications. 2N5881 Collector Emitter Sustaining Voltage VCEO(sus) = 60 Vdc (Min) 2N5879, 2N5881 VCEO(sus) = 80 Vdc (Min) 2N5880, 2N5882 * 2N5882 DC Cur

 9.2. Size:70K  central
 2n5879 2n5880 2n5881 2n5882.pdf

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

 9.3. Size:124K  mospec
 2n5875-78.pdf

A A A

 9.4. Size:11K  semelab
 2n5870.pdf

2N5870 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 80V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac

 9.5. Size:12K  semelab
 2n5872.pdf

2N5872 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar PNP Device. 3 VCEO = 80V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 7A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac

 9.6. Size:11K  semelab
 2n5871.pdf

2N5871 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar PNP Device. 3 VCEO = 60V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 7A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac

 9.7. Size:11K  semelab
 2n5873.pdf

2N5873 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 60V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 7A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac

 9.8. Size:12K  semelab
 2n5874.pdf

2N5874 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 80V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 7A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac

 9.9. Size:186K  bocasemi
 2n5879 2n5880 2n5881 2n5882.pdf

A Boca Semiconductor Corp. BSC http //www.bocasemi.com A A Boca Semiconductor Corp. BSC http //www.bocasemi.com A Boca Semiconductor Corp. BSC http //www.bocasemi.com

 9.10. Size:117K  inchange semiconductor
 2n5879 2n5880.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5879 2N5880 DESCRIPTION With TO-3 package Low collector saturation voltage Complement to type 2N5881 2N5882 APPLICATIONS For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolu

 9.11. Size:117K  inchange semiconductor
 2n5875 2n5876.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5875 2N5876 DESCRIPTION With TO-3 package Low collector saturation voltage Complement to type 2N5877 2N5878 APPLICATIONS For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolu

 9.12. Size:118K  inchange semiconductor
 2n5869 2n5870.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5869 2N5870 DESCRIPTION With TO-3 package Low collector saturation voltage APPLICATIONS For medium-speed switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER

 9.13. Size:116K  inchange semiconductor
 2n5873 2n5874.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5873 2N5874 DESCRIPTION With TO-3 package Low collector saturation voltage APPLICATIONS For medium-speed switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER

 9.14. Size:116K  inchange semiconductor
 2n5871 2n5872.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5871 2N5872 DESCRIPTION With TO-3 package Low collector saturation voltage APPLICATIONS For medium-speed switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER