2SB1606 Todos los transistores

 ..1. Size:55K  panasonic
 2sb1606.pdf

Power Transistors 2SB1606 Silicon PNP epitaxial planar type For power switching Unit mm 4.6 0.2 9.9 0.3 2.9 0.2 Features 3.2 0.1 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package with outstanding insulation, which can be in- 2.6 0.1 stalled to the heat sink wi

 ..2. Size:215K  inchange semiconductor
 2sb1606.pdf

isc Silicon PNP Power Transistor 2SB1606 DESCRIPTION High Collector current Ic Low Collector to Emitter Saturation Voltage V = -0.5V(Max.)@I = -4A CE(sat) C Full-pack Package With Outstanding Insulation, Which Can Be Installed to The Heat Sink With One Screw Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power

 8.1. Size:206K  toshiba
 2sb1602.pdf

 8.2. Size:45K  panasonic
 2sb1605.pdf

Power Transistors 2SB1605, 2SB1605A Silicon PNP epitaxial planar type For low-freauency power amplification Unit mm Features High forward current transfer ratio hFE which has satisfactory linearity 4.6 0.2 Low collector to emitter saturation voltage VCE(sat) 9.9 0.3 2.9 0.2 Full-pack package with outstanding insulation, which can be in- 3.2 0.1 stalled to the heat sin

 8.3. Size:56K  panasonic
 2sb1604.pdf

Power Transistors 2SB1604, 2SB1604A Silicon PNP epitaxial planar type For low-voltage switching Unit mm Features 4.6 0.2 Low collector to emitter saturation voltage VCE(sat) 9.9 0.3 2.9 0.2 3.2 0.1 High-speed switching Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one screw Absolute Maximum Ratings (TC=25 C) 2.6 0.1 1

 8.4. Size:55K  panasonic
 2sb1607.pdf

Power Transistors 2SB1607 Silicon PNP epitaxial planar type For power switching Unit mm Complementary to 2SD2469 4.6 0.2 9.9 0.3 2.9 0.2 Features 3.2 0.1 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package with outstanding insulation, which can be in- 2.6 0.1 s

 8.5. Size:54K  panasonic
 2sb1603.pdf

Power Transistors 2SB1603, 2SB1603A Silicon PNP epitaxial planar type For low-voltage switching Unit mm 4.6 0.2 Features 9.9 0.3 2.9 0.2 Low collector to emitter saturation voltage VCE(sat) 3.2 0.1 High-speed switching Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one screw Absolute Maximum Ratings (TC=25 C) 2.6 0.1 1.

 8.6. Size:188K  jmnic
 2sb1604 2sb1604a.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB1604 2SB1604A DESCRIPTION With TO-220F package Low collector saturation voltage High speed switching APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMET

 8.7. Size:215K  inchange semiconductor
 2sb1605.pdf

isc Silicon PNP Power Transistor 2SB1605 DESCRIPTION High-speed Switching Low Collector to Emitter Saturation Voltage V = -1.2V(Max.)@I = -3A CE(sat) C Full-pack Package With Outstanding Insulation, Which Can Be Installed to The Heat Sink With One Screw Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-freauen

 8.8. Size:213K  inchange semiconductor
 2sb1604.pdf

isc Silicon PNP Power Transistor 2SB1604 DESCRIPTION High-speed Switching Low Collector to Emitter Saturation Voltage V = -0.6V(Max.)@I = -10A CE(sat) C Full-pack Package With Outstanding Insulation, Which Can Be Installed to The Heat Sink With One Screw Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-voltag

 8.9. Size:148K  inchange semiconductor
 2sb1605 2sb1605a.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1605 2SB1605A DESCRIPTION With TO-220F package Low collector saturation voltage Good linearity of hFE APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25

 8.10. Size:149K  inchange semiconductor
 2sb1603 2sb1603a.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1603 2SB1603A DESCRIPTION With TO-220F package Low collector saturation voltage High speed switching APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 )

 8.11. Size:214K  inchange semiconductor
 2sb1607.pdf

isc Silicon PNP Power Transistor 2SB1607 DESCRIPTION Large Collector Current Satisfactory Linearity of Foward Current Transfer Ratio Low Collector to Emitter Saturation Voltage V = -0.5V(Max.)@I = -5A CE(sat) C Full-pack Package With Outstanding Insulation, Which Can Be Installed to The Heat Sink With One Screw Complement to Type 2SD2469 Minimum Lot-to-Lot variations for

 8.12. Size:215K  inchange semiconductor
 2sb1603.pdf

isc Silicon PNP Power Transistor 2SB1603 DESCRIPTION High-speed Switching Low Collector to Emitter Saturation Voltage V = -0.5V(Max.)@I = -2A CE(sat) C Full-pack Package With Outstanding Insulation, Which Can Be Installed to The Heat Sink With One Screw Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-voltage

 8.13. Size:149K  inchange semiconductor
 2sb1604 2sb1604a.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1604 2SB1604A DESCRIPTION With TO-220F package Low collector saturation voltage High speed switching APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 )