2SB1658 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DATA SHEETSILICON TRANSISTOR2SB1658AUDIO FREQUENCY AMPLIFIER, SWITCHINGPNP SILICON EPITAXIAL TRANSISTORSFEATURESPACKAGE DIMENSIONS Low VCE(sat)in millimeters (inches)VCE(sat) = -0.15 V Max (@lC/lB = 1.0 A/50 mA) High DC Current Gain8.5 MAX. 2.8 MAX.(0.334 MAX.) (0.110 MAX.)hEF = 150 to 600 (@VCE = -2.0 V, lC = -1.0 A) 3.2 0.2 ( 0.126)ABSOLUTE MAXIMUM R

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1658 DESCRIPTION With TO-126 package Low collector saturation voltage High DC current gain APPLICATIONS For audio frequency amplifier and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMB

JMnic Product Specification Silicon PNP Power Transistors 2SB1658 DESCRIPTION With TO-126 package Low collector saturation voltage High DC current gain APPLICATIONS For audio frequency amplifier and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER

2SB1658(3CA1658) PNP /SILICON PNP TRANSISTOR : Purpose: Audio frequency power amplifier and switching applications. : Features: Low saturation voltage, high DC current gain. /Absolute maximum ratings(Ta=25) Symbol Rating Unit

isc Silicon PNP Power Transistor 2SB1658DESCRIPTIONHigh Collector Current -I = -5ACHigh DC Current Gain-: h = 150~600@I = -1AFE CLow-Collector Saturation Voltage-: V = -0.15V(Max.)@I = -1ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency amplifier and switchingapplications.AB

DATA SHEETSILICON TRANSISTOR2SB1657AUDIO FREQUENCY AMPLIFIER, SWITCHINGPNP SILICON EPITAXIAL TRANSISTORSFEATURESPACKAGE DIMENSIONS Low VCE(sat)in millimeters (inches)VCE(sat) = -0.15 V Max (@lC/lB = 0.5 A/25 mA) High DC Current Gain8.5 MAX. 2.8 MAX.(0.334 MAX.) (0.110 MAX.)hFE = 150 to 600 (@VCE = -2.0 V, lC = -0.5 A) 3.2 0.2 ( 0.126)ABSOLUTE MAXIMUM R

Power Transistors2SB1653Silicon PNP triple diffusion planar typeFor power switchingUnit: mm7.5 0.2 4.5 0.2Features90High collector to emitter VCEO0.65 0.1 0.85 0.1Low collector to emitter saturation voltage VCE(sat)Allowing automatic insertion with radial taping1.0 0.10.8C 0.8C0.7 0.1 0.7 0.1Absolute Maximum Ratings (TC=25C)Parameter Symbol Rati

Transistor2SB1651Silicon PNP epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mm6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesLow noise voltage NV.High foward current transfer ratio hFE.M type package allowing easy automatic and manual insertion as0.65 max.well as stand-alone fixing to the printed circuit board.+0.1 0.450.05A

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1657 DESCRIPTION With TO-126 package Low collector saturation voltage High DC current gain APPLICATIONS For audio frequency amplifier and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMB

JMnic Product Specification Silicon PNP Power Transistors 2SB1657 DESCRIPTION With TO-126 package Low collector saturation voltage High DC current gain APPLICATIONS For audio frequency amplifier and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER

JMnic Product Specification Silicon PNP Power Transistors 2SB1655 DESCRIPTION With TO-220F package Excellent DC current gain characteristics Low collector saturation voltage Wide area of safe operation Complement to type 2SD2394 PINNING PIN DESCRIPTION1 Base 2 Collector3 Emitter Fig.1 simplified outline (TO-220F) and symbolAbsolute maximum ratings (Ta=25)

E(70)BDarlington 2SB1659Equivalent circuitCSilicon PNP Epitaxial Planar Transistor (Complement to type 2SD2589)Application : Audio, Series Regulator and General PurposeExternal Dimensions MT-25(TO220) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol ConditionsSymbol 2SB1659 Unit 2SB1659 Unit0.24.80.210.2ICBOVCBO 110 V VC

isc Silicon PNP Power Transistor 2SB1657DESCRIPTIONHigh Collector Current -I = -5ACHigh DC Current Gain-: h = 150~600@I = -1AFE CLow-Collector Saturation Voltage-: V = -0.15V(Max.)@I = -0.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency amplifier and switchingapplications.

isc Silicon PNP Power Transistor 2SB1655DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -1.0V(Max)@ (I = -2A, I = -0.2A)CE(sat) C BWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifications.ABSOLUTE MAXIMUM