2SB1658 Todos los transistores

 ..1. Size:48K  nec
 2sb1658.pdf

DATA SHEET SILICON TRANSISTOR 2SB1658 AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS FEATURES PACKAGE DIMENSIONS Low VCE(sat) in millimeters (inches) VCE(sat) = -0.15 V Max (@lC/lB = 1.0 A/50 mA) High DC Current Gain 8.5 MAX. 2.8 MAX. (0.334 MAX.) (0.110 MAX.) hEF = 150 to 600 (@VCE = -2.0 V, lC = -1.0 A) 3.2 0.2 ( 0.126) ABSOLUTE MAXIMUM R

 ..2. Size:96K  savantic
 2sb1658.pdf

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1658 DESCRIPTION With TO-126 package Low collector saturation voltage High DC current gain APPLICATIONS For audio frequency amplifier and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMB

 ..3. Size:147K  jmnic
 2sb1658.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB1658 DESCRIPTION With TO-126 package Low collector saturation voltage High DC current gain APPLICATIONS For audio frequency amplifier and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER

 ..4. Size:268K  lzg
 2sb1658 3ca1658.pdf

2SB1658(3CA1658) PNP /SILICON PNP TRANSISTOR Purpose Audio frequency power amplifier and switching applications. Features Low saturation voltage, high DC current gain. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit

 ..5. Size:190K  inchange semiconductor
 2sb1658.pdf

isc Silicon PNP Power Transistor 2SB1658 DESCRIPTION High Collector Current -I = -5A C High DC Current Gain- h = 150 600@I = -1A FE C Low-Collector Saturation Voltage- V = -0.15V(Max.)@I = -1A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency amplifier and switching applications. AB

 8.1. Size:47K  nec
 2sb1657.pdf

DATA SHEET SILICON TRANSISTOR 2SB1657 AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS FEATURES PACKAGE DIMENSIONS Low VCE(sat) in millimeters (inches) VCE(sat) = -0.15 V Max (@lC/lB = 0.5 A/25 mA) High DC Current Gain 8.5 MAX. 2.8 MAX. (0.334 MAX.) (0.110 MAX.) hFE = 150 to 600 (@VCE = -2.0 V, lC = -0.5 A) 3.2 0.2 ( 0.126) ABSOLUTE MAXIMUM R

 8.2. Size:39K  panasonic
 2sb1653.pdf

Power Transistors 2SB1653 Silicon PNP triple diffusion planar type For power switching Unit mm 7.5 0.2 4.5 0.2 Features 90 High collector to emitter VCEO 0.65 0.1 0.85 0.1 Low collector to emitter saturation voltage VCE(sat) Allowing automatic insertion with radial taping 1.0 0.1 0.8C 0.8C 0.7 0.1 0.7 0.1 Absolute Maximum Ratings (TC=25 C) Parameter Symbol Rati

 8.3. Size:40K  panasonic
 2sb1651 e.pdf

Transistor 2SB1651 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit mm 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low noise voltage NV. High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as 0.65 max. well as stand-alone fixing to the printed circuit board. +0.1 0.45 0.05 A

 8.4. Size:97K  savantic
 2sb1657.pdf

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1657 DESCRIPTION With TO-126 package Low collector saturation voltage High DC current gain APPLICATIONS For audio frequency amplifier and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMB

 8.5. Size:147K  jmnic
 2sb1657.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB1657 DESCRIPTION With TO-126 package Low collector saturation voltage High DC current gain APPLICATIONS For audio frequency amplifier and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER

 8.6. Size:145K  jmnic
 2sb1655.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB1655 DESCRIPTION With TO-220F package Excellent DC current gain characteristics Low collector saturation voltage Wide area of safe operation Complement to type 2SD2394 PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 )

 8.7. Size:22K  sanken-ele
 2sb1659.pdf

E (70 ) B Darlington 2SB1659 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2589) Application Audio, Series Regulator and General Purpose External Dimensions MT-25(TO220) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Conditions Symbol 2SB1659 Unit 2SB1659 Unit 0.2 4.8 0.2 10.2 ICBO VCBO 110 V VC

 8.8. Size:210K  inchange semiconductor
 2sb1657.pdf

isc Silicon PNP Power Transistor 2SB1657 DESCRIPTION High Collector Current -I = -5A C High DC Current Gain- h = 150 600@I = -1A FE C Low-Collector Saturation Voltage- V = -0.15V(Max.)@I = -0.5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency amplifier and switching applications.

 8.9. Size:206K  inchange semiconductor
 2sb1655.pdf

isc Silicon PNP Power Transistor 2SB1655 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Low Collector Saturation Voltage- V = -1.0V(Max)@ (I = -2A, I = -0.2A) CE(sat) C B Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifications. ABSOLUTE MAXIMUM