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2SC3972A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC3972A
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 40 W
   Tensión colector-base (Vcb): 900 V
   Tensión colector-emisor (Vce): 500 V
   Tensión emisor-base (Veb): 8 V
   Corriente del colector DC máxima (Ic): 5 A

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 20 MHz
   Ganancia de corriente contínua (hfe): 15
   Paquete / Cubierta: TO220FA
 

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2SC3972A Datasheet (PDF)

 ..1. Size:145K  inchange semiconductor
2sc3972 2sc3972a.pdf pdf_icon

2SC3972A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3972 2SC3972A DESCRIPTION With TO-220Fa package High speed switching High VCBO Wide area of safe operation APPLICATIONS For high breakdown voltate ,high-speed switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 Emitte

 7.1. Size:60K  panasonic
2sc3972.pdf pdf_icon

2SC3972A

Power Transistors2SC3972, 2SC3972ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm10.0 0.2 4.2 0.2Features5.5 0.2 2.7 0.2High-speed switchingHigh collector to base voltage VCBO 3.1 0.1Wide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be insta

 7.2. Size:181K  jmnic
2sc3972.pdf pdf_icon

2SC3972A

JMnic Product SpecificationSilicon NPN Power Transistors 2SC3972 2SC3972A DESCRIPTION With TO-220Fa package High speed switching High VCBO Wide area of safe operation APPLICATIONS For high breakdown voltate ,high-speed switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute maximu

 7.3. Size:211K  inchange semiconductor
2sc3972.pdf pdf_icon

2SC3972A

isc Silicon NPN Power Transistor 2SC3972DESCRIPTION Collector-Base Breakdown Voltage-: V = 800V(Min.)(BR)CBOWide Area of Safe OperationHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNIT

Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: SD1272 | BD649F

 

 
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