2SC5003 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC5003
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80 W
Tensión colector-base (Vcb): 1500 V
Tensión colector-emisor (Vce): 800 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 7 A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 4 MHz
Ganancia de corriente contínua (hFE): 8
Encapsulados: TO3PML
Búsqueda de reemplazo de 2SC5003
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2SC5003 datasheet
..1. Size:228K jmnic
2sc5003.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC5003 DESCRIPTION With TO-3PML package High voltage switching transistor Built-in damper diode APPLICATIONS Display horizontal deflection output; switching regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum
..2. Size:25K sanken-ele
2sc5003.pdf
Equivalent C circuit B Built-in Damper Diode 2SC5003 (50 ) E Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application Display Horizontal Deflection Output, Switching Regulator and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC5003 Symbol Conditions 2SC5003
..3. Size:177K inchange semiconductor
2sc5003.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5003 DESCRIPTION With TO-3PML package High voltage switching transistor Built-in damper diode APPLICATIONS Display horizontal deflection output; switching regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter
8.3. Size:257K nec
ne856 2sc5011 2sc5006 2sc4226 2sc3355 2sc3603 2sc3356 2sc3357 2sc3603 2sc4093.pdf
NEC's NPN SILICON HIGH NE856 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 7 GHz LOW NOISE FIGURE 1.1 dB at 1 GHz HIGH COLLECTOR CURRENT 100 mA HIGH RELIABILITY METALLIZATION 35 (MICRO-X) 00 (CHIP) LOW COST DESCRIPTION NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator application
8.4. Size:51K nec
2sc5008.pdf
DATA SHEET SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low 1.6 0.1 noise figure, high gain, and high current capability achieve a very wide 0.8 0.1 dyna
8.5. Size:47K nec
2sc5004.pdf
DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5004 is a low supply voltage transistor designed for UHF in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the 1.6 0.1 0.8 0.1 transistor has been applied ultra super mini mold package. 2 FEATURES
8.6. Size:247K nec
ne680xx 2sc5013 2sc5008 2sc4228 2sc3585 2sc3587 2sc4095.pdf
NEC's NPN SILICON HIGH NE680 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 10 GHz LOW NOISE FIGURE 1.7 dB at 2 GHz 2.6 dB at 4 GHz HIGH ASSOCIATED GAIN 12.5 dB at 2 GHz 8.0 dB at 4 GHz EXCELLENT LOW VOLTAGE 00 (CHIP) 35 (MICRO-X) LOW CURRENT PERFORMANCE DESCRIPTION NEC's NE680 series of NPN epitaxial silicon transistors is designed for l
8.7. Size:1827K nec
ne58219 2sc5004.pdf
DATA SHEET SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the 1.6 0.1 0.8 0.1 transistor has been applied ultra super mini mold packa
8.8. Size:47K nec
2sc5005.pdf
DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5005 is a low supply voltage transistor designed for UHF in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the transistor has been applied ultra super mini mold package. 1.6 0.1 0.8 0.1 2 FEATURES
8.9. Size:52K nec
2sc5006.pdf
DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direc
8.10. Size:59K nec
2sc5009.pdf
DATA SHEET SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal amplifiers from VHF band to L band. Low in milimeters noise figure, high gain, and high current capability achieve a very wide 1.6 0.1 dynamic range and e
8.11. Size:218K nec
2sc5012 2sc5007 2sc4227 2sc3583 2sc3604 2sc4094 ne681.pdf
NEC's NPN SILICON HIGH NE681 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 8 GHz LOW NOISE FIGURE 1.2 dB at 1 GHz 1.6 dB at 2 GHz HIGH ASSOCIATED GAIN 15 dB at 1 GHz 12 dB at 2 GHz LOW COST 00 (CHIP) 35 (MICRO-X) DESCRIPTION NEC's NE681 series of NPN epitaxial silicon transistors are designed for low noise, high gain, low cost amplifier a
8.12. Size:53K nec
2sc5007.pdf
DATA SHEET SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direc
8.13. Size:66K rohm
2sc5001.pdf
2SC5001 Transistors Low VCE(sat) Transistor (Strobe flash) (20V, 10A) 2SC5001 External dimentions (Unit mm) Features 1) Low saturation voltage, typically VCE(sat) = 0.13V at IC / CPT3 6.5 5.1 IB= 4A / 50mA. 2.3 0.5 2) High current capacity, typically IC = 10A for DC operation and 15A for 10ms pulse. 3) Complements the 2SA1834. 0.75 Packaging specifications
8.14. Size:50K rohm
2sa1834 2sc5001.pdf
2SA1834 Transistors Transistors 2SC5001 (96-106-B217) (96-193-D217) 292 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference onl
8.15. Size:134K utc
2sc5006.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC5006 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SC5006 is an NPN epitaxial transistor; it uses UTC s advanced technology to provide the customers with low noise figure, high DC current gain and high current capability achieve a very wide dynamic range and excellent linearity. The UTC 2SC5006 is
8.16. Size:235K jmnic
2sc5002.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC5002 DESCRIPTION With TO-3PML package High voltage switching APPLICATIONS Display horizontal deflection output; switching regulator general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER COND
8.17. Size:24K sanken-ele
2sc5002.pdf
2SC5002 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application Display Horizontal Deflection Output, Switching Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM100(TO3PF) Symbol 2SC5002 Symbol Conditions 2SC5002 Unit Unit 0.2 0.2 5.5 15.6 ICBO1 VCB=1200V A VCBO
8.18. Size:203K inchange semiconductor
2sc5006.pdf
isc Silicon NPN RF Transistor 2SC5006 DESCRIPTION Low Voltage Use Ultra Super Mini Mold Package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low noise and small signal amplifiers from VHF band to UHF band ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 20 V CBO
8.19. Size:181K inchange semiconductor
2sc5002.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5002 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for display horizontal deflection output,switching regulator and general purpose applicati
Otros transistores... 2SC4923, 2SC4924, 2SC4940, 2SC4941, 2SC4980, 2SC4981, 2SC4982, 2SC5002, 2SC2625, 2SC5042, 2SC5048, 2SC5124, 2SC5129, 2SC5143, 2SC5148, 2SC5149, 2SC5150
