2SC5048 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC5048 DESCRIPTION With TO-3P(H)IS package High speed High voltage Low saturation voltage Collector metal (fin) is fully covered with mold resin APPLICATIONS Horizontal deflection output for high resolution display,colorTV High speed switching applications PINNING PIN DESCRIPTION1 Base

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5048 DESCRIPTION With TO-3P(H)IS package High speed High voltage Low saturation voltage APPLICATIONS Horizontal deflection output for high resolution display,colorTV High speed switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3P(H)IS

Ordering number:EN4784NPN Triple Diffused Planar Silicon Transistor2SC5046Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High reliability (Adoption of HVP process).2048B High breakdown voltage (VCBO=1600V).[2SC5046] Adoption of MBIT process.20.03.35.02.03.40.6

Ordering number:EN4783NPN Triple Diffused Planar Silicon Transistor2SC5045Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High reliability (Adoption of HVP process).2039D High breakdown voltage (VCBO=1600V).[2SC5045] Adoption of MBIT process.16.05.63.43.12.82.0

Ordering number:EN4780NPN Triple Diffused Planar Silicon Transistor2SC5042Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High reliability (HVP process).2039D High breakdown voltage (VCBO=1600V).[2SC5042] Adoption of MBIT process.16.05.63.43.12.82.0 2.01.00.

Ordering number:EN4779NPN Triple Diffused Planar Silicon Transistor2SC5041Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High reliability (HVP process).2039D High breakdown voltage (VCBO=1600V).[2SC5041] Adoption of MBIT process.16.05.63.4 On-chip damper diode.

Ordering number:EN4782ANPN Triple Diffused Planar Silicon Transistor2SC5044Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High reliability (HVP process).2039D High breakdown voltage (VCBO=1600V).[2SC5044] Adoption of MBIT process.16.05.63.43.12.82.0 2.01.00

Ordering number:EN4781NPN Triple Diffused Planar Silicon Transistor2SC5043Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High reliability (HVP process).2039D High breakdown voltage (VCBO=1600V).[2SC5043] Adoption of MBIT process.16.05.63.4 On-chip damper diode.

Ordering number:EN4785ANPN Triple Diffused Planar Silicon Transistor2SC5047Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High reliability (Adoption of HVP process).2048B High breakdown voltage (VCBO=1600V).[2SC5047] Adoption of MBIT process.20.03.35.02.03.40.6

2SC5049Silicon NPN EpitaxialApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 10 GHz Typ High gain, low noise figurePG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHzOutlineMPAK311. Emitter2. Base23. Collector2SC5049Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VCollect

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC5042 DESCRIPTION With TO-3PML package High breakdown voltage, high reliability. High speed APPLICATIONS Ultrahigh-definition CRT display Horizontal deflection output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PML) and symbol Maximum absol

SMD Type TransistorsNPN Transistors2SC5049SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=20mA1 2 Collector Emitter Voltage VCEO=8V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collect

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5042DESCRIPTIONNPN triple diffused planar silicon transistorHigh Breakdown VoltageHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVery high-definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIM

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5043DESCRIPTIONNPN triple diffused planar silicon transistorHigh Breakdown VoltageHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVery high-definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIM

isc Silicon NPN Power Transistor 2SC5047DESCRIPTIONHigh Switching SpeedHigh Breakdown Voltage-: V = 1600V(Min)(BR)CBOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1600 VCBO