2N5882. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2N5882 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N5882

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 160 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 15 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 4 MHz

Capacitancia de salida (Cc): 400 pF

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO3

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2N5882 datasheet

..1. Size:252K motorola
2n5879 2n5880 2n5881 2n5882.pdf pdf_icon

Order this document MOTOROLA by 2N5879/D SEMICONDUCTOR TECHNICAL DATA PNP 2N5879 Complementary Silicon 2N5880* High-Power Transistors NPN . . . designed for general purpose power amplifier and switching applications. 2N5881 Collector Emitter Sustaining Voltage VCEO(sus) = 60 Vdc (Min) 2N5879, 2N5881 VCEO(sus) = 80 Vdc (Min) 2N5880, 2N5882 * 2N5882 DC Cur

..2. Size:70K central
2n5879 2n5880 2n5881 2n5882.pdf pdf_icon

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

..3. Size:186K bocasemi
2n5879 2n5880 2n5881 2n5882.pdf pdf_icon

A Boca Semiconductor Corp. BSC http //www.bocasemi.com A A Boca Semiconductor Corp. BSC http //www.bocasemi.com A Boca Semiconductor Corp. BSC http //www.bocasemi.com

..4. Size:112K jmnic
2n5881 2n5882.pdf pdf_icon

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5881 2N5882 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage Complement to type 2N5879 2N5880 APPLICATIONS For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolu

..5. Size:117K inchange semiconductor
2n5881 2n5882.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5881 2N5882 DESCRIPTION With TO-3 package Low collector saturation voltage Complement to type 2N5879 2N5880 APPLICATIONS For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absol

9.1. Size:275K motorola
2n5883 2n5884 2n5885 2n5886.pdf pdf_icon

Order this document MOTOROLA by 2N5883/D SEMICONDUCTOR TECHNICAL DATA PNP 2N5883 Complementary Silicon High-Power Transistors 2N5884* NPN . . . designed for general purpose power amplifier and switching applications. Low Collector Emitter Saturation Voltage 2N5885 VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc Low Leakage Current 2N5886* ICEX = 1.0 mAdc (max) at Rated

9.2. Size:41K st
2n5886.pdf pdf_icon

2N5886 HIGH CURRENT SILICON NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE HIGH CURRENT CAPABILITY APPLICATIONS GENERAL PURPOSE SWITCHING AND AMPLIFIER LINEAR AND SWITCHING INDUSTRIAL 1 EQUIPMENT 2 DESCRIPTION The 2N5886 is a silicon Epitaxial-Base NPN TO-3 power transistor mounted in Jedec TO-3 metal case. It is inteded for use in power linear amplif

9.3. Size:105K central
2n5883 2n5884 2n5885 2n5886 2.pdf pdf_icon

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 www.centralsemi.com

9.4. Size:69K onsemi
2n5886g.pdf pdf_icon

2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High-Power Transistors Complementary silicon high-power transistors are designed for general-purpose power amplifier and switching applications. Features 25 AMPERE COMPLEMENTARY Low Collector-Emitter Saturation Voltage - SILICON POWER TRANSISTORS VCE(sat) = 1.0 Vdc, (max) at IC

9.5. Size:94K onsemi
2n5883 2n5884 2n5885 2n5886.pdf pdf_icon

2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High-Power Transistors Complementary silicon high-power transistors are designed for general-purpose power amplifier and switching applications. http //onsemi.com Features 25 AMPERE COMPLEMENTARY Low Collector-Emitter Saturation Voltage - SILICON POWER TRANSISTORS VCE(sat) = 1

9.6. Size:69K onsemi
2n5885g.pdf pdf_icon

9.7. Size:69K onsemi
2n5884g 2n5884g 2n5886g.pdf pdf_icon

9.8. Size:69K onsemi
2n5883g 2n5883g 2n5885g.pdf pdf_icon

9.9. Size:190K bocasemi
2n5883 2n5884 2n5885 2n5886.pdf pdf_icon

A Boca Semiconductor Corp. BSC http //www.bocasemi.com A Boca Semiconductor Corp. BSC http //www.bocasemi.com A Boca Semiconductor Corp. BSC http //www.bocasemi.com A Boca Semiconductor Corp. BSC http //www.bocasemi.com

9.10. Size:120K jmnic
2n5883 2n5884.pdf pdf_icon

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5883 2N5884 DESCRIPTION With TO-3 package Complement to type 2N5885 2N5886 APPLICATIONS They are intended for use in power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PAR

9.11. Size:111K jmnic
2n5885 2n5886.pdf pdf_icon

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5885 2N5886 DESCRIPTION With TO-3 package Complement to type 2N5883 2N5884 APPLICATIONS They are intended for use in power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PAR

9.12. Size:165K cn sptech
2n5886.pdf pdf_icon

SPTECH Product Specification SPTECH Silicon NPN Power Transistors 2N5886 DESCRIPTION Low Collector Saturation Voltage- V = 1.0V(Max.)@ I = 15A CE(sat) C DC Current Gain- h = 20- @I = 10A FE C APPLICATIONS Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 80 V

9.13. Size:183K inchange semiconductor
2n5885 5886.pdf pdf_icon

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N5885/5886 DESCRIPTION DC Current Gain- hFE= 20(Min)@IC= 10A Low Saturation Voltage- VCE(sat)= 1.0V(Max)@ IC= 15A Complement to Type 2N5883/5884 APPLICATIONS Designed for general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL P

9.14. Size:118K inchange semiconductor
2n5883 2n5884.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5883 2N5884 DESCRIPTION With TO-3 package Complement to type 2N5885 2N5886 High power dissipations APPLICATIONS They are intended for use in power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute

9.15. Size:221K inchange semiconductor
2n5884.pdf pdf_icon

isc Silicon PNP Power Transistor 2N5884 DESCRIPTION Collector-Emitter Breakdown Voltage- V =-80V(Min) (BR)CEO Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL PARAMETER VALUE T V Collector-Base Voltage -80 V CBO V Collector-Emitter Voltag

9.16. Size:117K inchange semiconductor
2n5879 2n5880.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5879 2N5880 DESCRIPTION With TO-3 package Low collector saturation voltage Complement to type 2N5881 2N5882 APPLICATIONS For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolu

9.17. Size:187K inchange semiconductor
2n5885.pdf pdf_icon

isc Silicon NPN Power Transistors 2N5885 DESCRIPTION Low Collector Saturation Voltage- V = 1.0V(Max.)@ I = 15A CE(sat) C DC Current Gain- h = 20- @I = 10A FE C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM R

9.18. Size:184K inchange semiconductor
2n5885 2n5886.pdf pdf_icon