2SC5124 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

JMnic Product Specification Silicon NPN Power Transistors 2SC5124 DESCRIPTION With TO-3PML package High voltage switchihg transistor APPLICATIONS Display horizontal deflection output Switching regulator and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBO

2SC5124Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose(Ta=25C) Absolute maximum ratings (Ta=25C) Electrical Characteristics External Dimensions FM100(TO3PF)Symbol 2SC5124 Unit Symbol Conditions 2SC5124 Unit0.20.2 5.515.6ICBO1 VCB=1200V A100m

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5124DESCRIPTIONSilicon NPN diffused planar transistorGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for display horizontal deflection outputSwitching regulator and general purposeABSOLUTE MAXIMUM RATINGS(T =2

Power Transistors2SC5128Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm4.6 0.29.9 0.3 2.9 0.2Features 3.2 0.1High-speed switchingHigh collector to base voltage VCBOWide area of safe operation (ASO)Full-pack package with outstanding insulation, which can be in-2.6 0.1stalled to the heat sink with one screw

Power Transistors2SC5127, 2SC5127ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm4.6 0.2Features9.9 0.3 2.9 0.2High-speed switching 3.2 0.1High collector to base voltage VCBOWide area of safe operation (ASO)Full-pack package with outstanding insulation, which can be in-stalled to the heat sink with one screw2.

Power Transistors2SC5121Silicon NPN triple diffusion planar typeFor general amplificationUnit: mm+0.58.0 0.1 3.2 0.2FeaturesHigh collector to base voltage VCBO 3.16 0.1High collector to emitter VCEOSmall collector output capacitance CobTO-126 package, which is fitted to a heat sink without any insu-lation partsAbsolute Maximum Ratings (TC=25C)0.5 0.1

2SC5120Silicon NPN EpitaxialApplicationTO126FMHigh frequency amplifierFeatures Excellent high frequency characteristicsfT = 500 MHz typ High voltage and low output capacitanceVCEO = 150 V, Cob = 5.0 pF typ Suitable for wide band video amplifier 1231. Emitter2. Collector3. BaseAbsolute Maximum Ratings (Ta = 25C)Item Symbol Ratings Unit

Product Specification www.jmnic.com Silicon Power Transistors 2SC5129 DESCRIPTION With TO-3P(H)IS package High speed High voltage Low saturation voltage APPLICATIONS Horizontal deflection output for high resolution display,colorTV High speed switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3P(H)IS)

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5129DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display,color TV.High speed switch

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5128DESCRIPTIONCollectorEmitter Breakdown Voltage: V = 500V(Min)(BR)CEOHigh Speed SwitchingFull-pack package with outstanding insulation,which can be in staled to the heat sink with one screw100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATI