2SC5404 Datasheet. Equivalente

 ..1. Size:319K  toshiba
 2sc5404.pdf

2SC5404 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5404 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage VCBO = 1500 V Low Saturation Voltage V = 3 V (Max.) CE (sat) High Speed t = 0.15 s (Typ.) f Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RA

 ..2. Size:148K  jmnic
 2sc5404.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC5404 DESCRIPTION With TO-3P(H)IS package High voltage;high speed Low collector saturation voltage APPLICATIONS Horizontal deflection output for high resolution display,color TV High speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3P(H)IS) and symb

 ..3. Size:191K  inchange semiconductor
 2sc5404.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5404 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal output applications for medium resolution display &

 8.1. Size:50K  nec
 2sc5408.pdf

PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5408 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURE PACKAGE DIMENSIONS (in mm) High fT 17 GHz TYP. 2.1 0.1 High gain 1.25 0.1 S21e 2 = 15.5 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 7 mA NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC = 1 mA 6-pin Small Mini Mold Package ORDERING INFORMATION PART NUM

 8.2. Size:39K  nec
 2sc5409.pdf

PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5409 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURE PACKAGE DIMENSIONS (in mm) High fT 16 GHz TYP. 2.1 0.1 High gain 1.25 0.1 S21e 2 = 14 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 20 mA NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC = 3 mA 6-pin Small Mini Mold Package ORDERING INFORMATION PART NUMB

 8.3. Size:37K  panasonic
 2sc5406.pdf

Power Transistors 2SC5406, 2SC5406A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=

 8.4. Size:37K  panasonic
 2sc5405.pdf

Power Transistors 2SC5405 Silicon NPN triple diffusion planar type For high-speed switching and high current amplification ratio Unit mm Features 4.6 0.2 9.9 0.3 2.9 0.2 High-speed switching High forward current transfer ratio hFE which has satisfactory 3.2 0.1 linearity Dielectric breakdown voltage of the package > 5kV 1.4 0.2 2.6 0.1 Absolute Maximum Ratings (T

 8.5. Size:36K  panasonic
 2sc5407.pdf

Power Transistors 2SC5407 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=25 C) 0.

 8.6. Size:178K  inchange semiconductor
 2sc5407.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5407 DESCRIPTION High Breakdown Voltage High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME