2SC5404 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SC5404 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5404 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t = 0.15 s (Typ.) f Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RA

JMnic Product Specification Silicon NPN Power Transistors 2SC5404 DESCRIPTION With TO-3P(H)IS package High voltage;high speed Low collector saturation voltage APPLICATIONS Horizontal deflection output for high resolution display,color TV High speed switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3P(H)IS) and symb

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5404DESCRIPTIONHigh Breakdown Voltage-V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal output applications for medium resolutiondisplay &

PRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5408NPN EPITAXIAL SILICON TRANSISTORFOR MICROWAVE HIGH-GAIN AMPLIFICATIONFEATURE PACKAGE DIMENSIONS (in mm) High fT17 GHz TYP.2.10.1 High gain1.250.1|S21e|2 = 15.5 dB TYP.@f = 2 GHz, VCE = 2 V, IC = 7 mA NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC = 1 mA 6-pin Small Mini Mold PackageORDERING INFORMATIONPART NUM

PRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5409NPN EPITAXIAL SILICON TRANSISTORFOR MICROWAVE HIGH-GAIN AMPLIFICATIONFEATURE PACKAGE DIMENSIONS (in mm) High fT16 GHz TYP.2.10.1 High gain1.250.1|S21e|2 = 14 dB TYP.@f = 2 GHz, VCE = 2 V, IC = 20 mA NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC = 3 mA 6-pin Small Mini Mold PackageORDERING INFORMATIONPART NUMB

Power Transistors2SC5406, 2SC5406ASilicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm15.5 0.5 3.0 0.3 3.2 0.1Features5 5High breakdown voltage, and high reliability through the use of aglass passivation layerHigh-speed switching5Wide area of safe operation (ASO)54.052.0 0.21.1 0.1Absolute Maximum Ratings (TC=

Power Transistors2SC5405Silicon NPN triple diffusion planar typeFor high-speed switching and high current amplification ratioUnit: mmFeatures 4.6 0.29.9 0.32.9 0.2High-speed switchingHigh forward current transfer ratio hFE which has satisfactory 3.2 0.1linearityDielectric breakdown voltage of the package: > 5kV1.4 0.22.6 0.1Absolute Maximum Ratings (T

Power Transistors2SC5407Silicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm15.5 0.5 3.0 0.3 3.2 0.1Features5 5High breakdown voltage, and high reliability through the use of aglass passivation layerHigh-speed switching5Wide area of safe operation (ASO)54.052.0 0.21.1 0.1Absolute Maximum Ratings (TC=25C)0.

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5407DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME