2SD2196 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD2196

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 65 W

Tensión colector-base (Vcb): 200 V

Tensión colector-emisor (Vce): 200 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 15 A

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 20 MHz

Ganancia de corriente contínua (hFE): 1500

Encapsulados: TO3PML

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2SD2196 datasheet

 ..1. Size:204K  inchange semiconductor
 2sd2196.pdf pdf_icon

2SD2196

isc Silicon NPN Darlington Power Transistor 2SD2196 DESCRIPTION High DC Current Gain h = 1500(Min.)@ I = 10A, V = 3V FE C CE High Collector-Emitter Sustaining Voltage- V = 200V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25

 8.1. Size:141K  sanyo
 2sd2198.pdf pdf_icon

2SD2196

Ordering number EN3149 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1449/2SD2198 50V/5A Switching Applications Features Package Dimensions Surface mount type device making the following unit mm possible. 2069B -Reduction in the number of manufacturing pro- [2SB1449/2SD2198] cesses for 2SB1449/2SD2198-applied equipment. -High density surface mount applications. -Small size of

 8.2. Size:104K  sanyo
 2sd2199.pdf pdf_icon

2SD2196

Ordering number EN3150 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1450/2SD2199 50V/7A Switching Applications Features Package Dimensions Surface mount type device making the following unit mm possible. 2069B -Reduction in the number of manufacturing pro- [2SB1450/2SD2199] cesses for 2SB1450/2SD2199-applied equipment. -High density surface mount applications. -Small size of

 8.3. Size:66K  rohm
 2sd2195 2sd1980 2sd1867 2sd2398.pdf pdf_icon

2SD2196

2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Transistors Power Transistor (100V , 2A) 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Features External dimensions (Units mm) 1) Darlington connection for high DC current gain. 2SD2195 4.0 2) Built-in resistor between base and emitter. 1.0 2.5 0.5 3) Built-in damper diode. (1) (2) 4) Complements the 2SB1580 / 2SB1316 / 2SB1567. (3) (1) Base(Gate)

MOSTRAR MÁS

Otros transistores... 2SC5669, 2SC5802, 2SC5895, 2SD1457A, 2SD1563A, 2SD1772A, 2SD1975A, 2SD1985A, BC547B, 2SD2222, 2SD2251, 2SD2331, 2SD2333, 2SD2335, 2SD2340, 2SD2374, 2SD2374A