2SD2488 Todos los transistores

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2SD2488 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD2488

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 130 W

Tensión colector-base (Vcb): 200 V

Tensión colector-emisor (Vce): 200 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 15 A

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 70 MHz

Ganancia de corriente contínua (hfe): 5000

Empaquetado / Estuche: TO3PN

Búsqueda de reemplazo de transistor bipolar 2SD2488

 

2SD2488 Datasheet (PDF)

1.1. 2sd2488.pdf Size:355K _no

2SD2488
2SD2488

100 Max 200 A) 100 Max 200 V 6500-20000 (P) (Y) . . . V V Max 120 TY P 10 0

1.2. 2sd2488.pdf Size:124K _inchange_semiconductor

2SD2488
2SD2488

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2488 DESCRIPTION Ў¤ With TO-3PN package Ў¤ DARLINGTON Ў¤ High DC current gain APPLICATIONS Ў¤ Audio ,regulator and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL

4.1. 2sd2481.pdf Size:167K _toshiba

2SD2488
2SD2488

2SD2481 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SD2481 Pulse Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications High DC current gain: hFE = 4000 (min) (V = 2 V, I = 150 mA) CE C Low saturation voltage: V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C B Maximum Ratings (Ta = 25C) Characteristics Symbol R

4.2. 2sd2480.pdf Size:179K _toshiba

2SD2488
2SD2488

2SD2480 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2480 Micro Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications High DC current gain: hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage: V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C B Maximum Ratings (Ta = 25C) Characteris

4.3. 2sd2486.pdf Size:70K _panasonic

2SD2488
2SD2488

Power Transistors 2SD2486 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Unit: mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 High forward current transfer ratio hFE which has satisfactory linearity ? 3.1 0.1 Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with

Otros transistores... 2SD2340 , 2SD2374 , 2SD2374A , 2SD2394 , 2SD2395 , 2SD2399 , 2SD2400 , 2SD2454 , TIP35C , 2SD2493 , 2SD2494 , 2SD2495 , 2SD2498 , 2SD2499 , 2SD2500 , 2SD2539 , 2SD2553 .

 


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