2SD2488 Todos los transistores

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 2sd2488.pdf

100 Max 200 A) 100 Max 200 V 6500-20000 (P) (Y) . . . V V Max 120 TY P 10 0

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 2sd2488.pdf

Inchange Semiconductor isc Silicon NPN Darlington Power Transistor 2SD2488 DESCRIPTION With TO-3PN package DARLINGTON High DC current gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio ,regulator and general purpose Absolute maximum ratings(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 200 V CBO

 8.1. Size:167K  toshiba
 2sd2481.pdf

2SD2481 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SD2481 Pulse Motor Drive, Hammer Drive Applications Unit mm Switching Applications Power Amplifier Applications High DC current gain hFE = 4000 (min) (V = 2 V, I = 150 mA) CE C Low saturation voltage V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C B Maximum Ratings (Ta = 25 C) Characteristics

 8.2. Size:179K  toshiba
 2sd2480.pdf

2SD2480 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2480 Micro Motor Drive, Hammer Drive Applications Unit mm Switching Applications Power Amplifier Applications High DC current gain hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C B Maximum Ratings (Ta = 25 C) Cha

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 2sd2486.pdf

Power Transistors 2SD2486 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Unit mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 High forward current transfer ratio hFE which has satisfactory linearity 3.1 0.1 Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat si