2N5887 Todos los transistores

 9.1. Size:275K  motorola
 2n5883 2n5884 2n5885 2n5886.pdf

Order this document MOTOROLA by 2N5883/D SEMICONDUCTOR TECHNICAL DATA PNP 2N5883 Complementary Silicon High-Power Transistors 2N5884* NPN . . . designed for general purpose power amplifier and switching applications. Low Collector Emitter Saturation Voltage 2N5885 VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc Low Leakage Current 2N5886* ICEX = 1.0 mAdc (max) at Rated

 9.2. Size:252K  motorola
 2n5879 2n5880 2n5881 2n5882.pdf

Order this document MOTOROLA by 2N5879/D SEMICONDUCTOR TECHNICAL DATA PNP 2N5879 Complementary Silicon 2N5880* High-Power Transistors NPN . . . designed for general purpose power amplifier and switching applications. 2N5881 Collector Emitter Sustaining Voltage VCEO(sus) = 60 Vdc (Min) 2N5879, 2N5881 VCEO(sus) = 80 Vdc (Min) 2N5880, 2N5882 * 2N5882 DC Cur

 9.3. Size:41K  st
 2n5886.pdf

2N5886 HIGH CURRENT SILICON NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE HIGH CURRENT CAPABILITY APPLICATIONS GENERAL PURPOSE SWITCHING AND AMPLIFIER LINEAR AND SWITCHING INDUSTRIAL 1 EQUIPMENT 2 DESCRIPTION The 2N5886 is a silicon Epitaxial-Base NPN TO-3 power transistor mounted in Jedec TO-3 metal case. It is inteded for use in power linear amplif

 9.4. Size:105K  central
 2n5883 2n5884 2n5885 2n5886 2.pdf

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 www.centralsemi.com

 9.5. Size:70K  central
 2n5879 2n5880 2n5881 2n5882.pdf

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

 9.6. Size:69K  onsemi
 2n5886g.pdf

2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High-Power Transistors Complementary silicon high-power transistors are designed for general-purpose power amplifier and switching applications. Features 25 AMPERE COMPLEMENTARY Low Collector-Emitter Saturation Voltage - SILICON POWER TRANSISTORS VCE(sat) = 1.0 Vdc, (max) at IC

 9.7. Size:94K  onsemi
 2n5883 2n5884 2n5885 2n5886.pdf

2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High-Power Transistors Complementary silicon high-power transistors are designed for general-purpose power amplifier and switching applications. http //onsemi.com Features 25 AMPERE COMPLEMENTARY Low Collector-Emitter Saturation Voltage - SILICON POWER TRANSISTORS VCE(sat) = 1

 9.8. Size:69K  onsemi
 2n5885g.pdf

2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High-Power Transistors Complementary silicon high-power transistors are designed for general-purpose power amplifier and switching applications. Features 25 AMPERE COMPLEMENTARY Low Collector-Emitter Saturation Voltage - SILICON POWER TRANSISTORS VCE(sat) = 1.0 Vdc, (max) at IC

 9.9. Size:69K  onsemi
 2n5884g 2n5884g 2n5886g.pdf

2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High-Power Transistors Complementary silicon high-power transistors are designed for general-purpose power amplifier and switching applications. Features 25 AMPERE COMPLEMENTARY Low Collector-Emitter Saturation Voltage - SILICON POWER TRANSISTORS VCE(sat) = 1.0 Vdc, (max) at IC

 9.10. Size:69K  onsemi
 2n5883g 2n5883g 2n5885g.pdf

2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High-Power Transistors Complementary silicon high-power transistors are designed for general-purpose power amplifier and switching applications. Features 25 AMPERE COMPLEMENTARY Low Collector-Emitter Saturation Voltage - SILICON POWER TRANSISTORS VCE(sat) = 1.0 Vdc, (max) at IC

 9.11. Size:190K  bocasemi
 2n5883 2n5884 2n5885 2n5886.pdf

A Boca Semiconductor Corp. BSC http //www.bocasemi.com A Boca Semiconductor Corp. BSC http //www.bocasemi.com A Boca Semiconductor Corp. BSC http //www.bocasemi.com A Boca Semiconductor Corp. BSC http //www.bocasemi.com

 9.12. Size:186K  bocasemi
 2n5879 2n5880 2n5881 2n5882.pdf

A Boca Semiconductor Corp. BSC http //www.bocasemi.com A A Boca Semiconductor Corp. BSC http //www.bocasemi.com A Boca Semiconductor Corp. BSC http //www.bocasemi.com

 9.13. Size:112K  jmnic
 2n5881 2n5882.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5881 2N5882 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage Complement to type 2N5879 2N5880 APPLICATIONS For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolu

 9.14. Size:120K  jmnic
 2n5883 2n5884.pdf

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5883 2N5884 DESCRIPTION With TO-3 package Complement to type 2N5885 2N5886 APPLICATIONS They are intended for use in power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PAR

 9.15. Size:111K  jmnic
 2n5885 2n5886.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5885 2N5886 DESCRIPTION With TO-3 package Complement to type 2N5883 2N5884 APPLICATIONS They are intended for use in power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PAR

 9.16. Size:165K  cn sptech
 2n5886.pdf

SPTECH Product Specification SPTECH Silicon NPN Power Transistors 2N5886 DESCRIPTION Low Collector Saturation Voltage- V = 1.0V(Max.)@ I = 15A CE(sat) C DC Current Gain- h = 20- @I = 10A FE C APPLICATIONS Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 80 V

 9.17. Size:183K  inchange semiconductor
 2n5885 5886.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N5885/5886 DESCRIPTION DC Current Gain- hFE= 20(Min)@IC= 10A Low Saturation Voltage- VCE(sat)= 1.0V(Max)@ IC= 15A Complement to Type 2N5883/5884 APPLICATIONS Designed for general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL P

 9.18. Size:117K  inchange semiconductor
 2n5881 2n5882.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5881 2N5882 DESCRIPTION With TO-3 package Low collector saturation voltage Complement to type 2N5879 2N5880 APPLICATIONS For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absol

 9.19. Size:118K  inchange semiconductor
 2n5883 2n5884.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5883 2N5884 DESCRIPTION With TO-3 package Complement to type 2N5885 2N5886 High power dissipations APPLICATIONS They are intended for use in power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute

 9.20. Size:221K  inchange semiconductor
 2n5884.pdf

isc Silicon PNP Power Transistor 2N5884 DESCRIPTION Collector-Emitter Breakdown Voltage- V =-80V(Min) (BR)CEO Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL PARAMETER VALUE T V Collector-Base Voltage -80 V CBO V Collector-Emitter Voltag

 9.21. Size:117K  inchange semiconductor
 2n5879 2n5880.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5879 2N5880 DESCRIPTION With TO-3 package Low collector saturation voltage Complement to type 2N5881 2N5882 APPLICATIONS For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolu

 9.22. Size:187K  inchange semiconductor
 2n5885.pdf

isc Silicon NPN Power Transistors 2N5885 DESCRIPTION Low Collector Saturation Voltage- V = 1.0V(Max.)@ I = 15A CE(sat) C DC Current Gain- h = 20- @I = 10A FE C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM R

 9.23. Size:184K  inchange semiconductor
 2n5885 2n5886.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N5885/5886 DESCRIPTION DC Current Gain- hFE= 20(Min)@IC= 10A Low Saturation Voltage- VCE(sat)= 1.0V(Max)@ IC= 15A Complement to Type 2N5883/5884 APPLICATIONS Designed for general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL P