BU2720AX Todos los transistores

 ..1. Size:59K  philips
 bu2720ax 1.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720AX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCES

 ..2. Size:135K  inchange semiconductor
 bu2720ax.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2720AX DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 825V (Min) High Switching Speed APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(

 7.1. Size:59K  philips
 bu2720af 1.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCES

 7.2. Size:124K  inchange semiconductor
 bu2720af.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2720AF DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 825V (Min) High Switching Speed APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(

 8.1. Size:60K  philips
 bu2720df 1.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCES

 8.2. Size:58K  philips
 bu2720dx 1.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720DX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V. QUICK REFERENCE DATA SYMBOL PARAMETER

 8.3. Size:126K  inchange semiconductor
 bu2720dx.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2720DX DESCRIPTION High Switching Speed High Voltage Built-in Ddamper Ddiode APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1700 V VCEO Co

 8.4. Size:123K  inchange semiconductor
 bu2720df.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU2720DF DESCRIPTION With TO-3PFa package High voltage High speed switching Built-in damper diode APPLICATIONS For use in horizontal deflection circuits of colour TV receivers. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER