BU2720DF Todos los transistores

 

BU2720DF . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BU2720DF
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 45 W
   Tensión colector-base (Vcb): 1700 V
   Tensión colector-emisor (Vce): 825 V
   Corriente del colector DC máxima (Ic): 10 A

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 4
   Paquete / Cubierta: TO3PFA

 Búsqueda de reemplazo de transistor bipolar BU2720DF

 

BU2720DF Datasheet (PDF)

 ..1. Size:60K  philips
bu2720df 1.pdf

BU2720DF
BU2720DF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720DF GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontaldeflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCES

 ..2. Size:123K  inchange semiconductor
bu2720df.pdf

BU2720DF
BU2720DF

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU2720DF DESCRIPTION With TO-3PFa package High voltage High speed switching Built-in damper diode APPLICATIONS For use in horizontal deflection circuits of colour TV receivers. PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER

 7.1. Size:58K  philips
bu2720dx 1.pdf

BU2720DF
BU2720DF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720DX GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope.Intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses upto 1700V.QUICK REFERENCE DATASYMBOL PARAMETER

 7.2. Size:126K  inchange semiconductor
bu2720dx.pdf

BU2720DF
BU2720DF

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2720DX DESCRIPTION High Switching Speed High Voltage Built-in Ddamper Ddiode APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCES Collector- Emitter Voltage(VBE= 0) 1700 V VCEO Co

 8.1. Size:59K  philips
bu2720ax 1.pdf

BU2720DF
BU2720DF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720AX GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontaldeflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCES

 8.2. Size:59K  philips
bu2720af 1.pdf

BU2720DF
BU2720DF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720AF GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontaldeflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCES

 8.3. Size:124K  inchange semiconductor
bu2720af.pdf

BU2720DF
BU2720DF

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2720AF DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 825V (Min) High Switching Speed APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCES Collector- Emitter Voltage(

 8.4. Size:135K  inchange semiconductor
bu2720ax.pdf

BU2720DF
BU2720DF

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2720AX DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 825V (Min) High Switching Speed APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCES Collector- Emitter Voltage(

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