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BUW13AW . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUW13AW
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 175 W
   Tensión colector-base (Vcb): 1000 V
   Tensión colector-emisor (Vce): 450 V
   Tensión emisor-base (Veb): 9 V
   Corriente del colector DC máxima (Ic): 15 A

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO247

 Búsqueda de reemplazo de transistor bipolar BUW13AW

 

BUW13AW Datasheet (PDF)

 ..1. Size:79K  philips
buw13w buw13aw 1.pdf

BUW13AW
BUW13AW

DISCRETE SEMICONDUCTORSDATA SHEETBUW13W; BUW13AWSilicon diffused power transistors1997 Aug 13Product specificationFile under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BUW13W; BUW13AWDESCRIPTIONHigh-voltage, high-speed,glass-passivated NPN powertransistor in a SOT429 package.geAPPLICATIONS2 Conv

 ..2. Size:123K  inchange semiconductor
buw13w buw13aw.pdf

BUW13AW
BUW13AW

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUW13W BUW13AW DESCRIPTION With TO-247 package High voltage,high speed APPLICATIONS Converters Inverters Switching regulators Motor control systems PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-247) and symbol 3 EmitterAbsolute maximum rating

 8.1. Size:214K  inchange semiconductor
buw13a.pdf

BUW13AW
BUW13AW

isc Silicon NPN Power Transistor BUW13ADESCRIPTIONHigh VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSConvertersInvertersSwitching regulatorsMotor control systemsABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1000 VCBOV Collector-Emitter

 8.2. Size:120K  inchange semiconductor
buw13 buw13a.pdf

BUW13AW
BUW13AW

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUW13 BUW13A DESCRIPTION With TO-3PN package High voltage,high speed APPLICATIONS Converters Inverters Switching regulators Motor control systems PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(

 8.3. Size:125K  inchange semiconductor
buw13f buw13af.pdf

BUW13AW
BUW13AW

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUW13F BUW13AF DESCRIPTION With TO-3PFa package High voltage;high speed APPLICATIONS Converters Inverters Switching regulators Motor control systems PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 Collector3 Emitterl Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS

 8.4. Size:212K  inchange semiconductor
buw13af.pdf

BUW13AW
BUW13AW

isc Silicon NPN Power Transistor BUW13AFDESCRIPTIONHigh VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSConvertersInvertersSwitching regulatorsMotor control systemsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1000 VCBOV Collector-Emitter

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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