T30F Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: T30F

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 80 W

Tensión colector-base (Vcb): 500 V

Tensión colector-emisor (Vce): 300 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 10 A

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 1000

Encapsulados: TO3PML

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T30F datasheet

 ..1. Size:128K  inchange semiconductor
t30f.pdf pdf_icon

T30F

 0.1. Size:213K  microsemi
apt30f50b apt30f50s.pdf pdf_icon

T30F

APT30F50B APT30F50S 500V, 30A, 0.19 Max, trr 230ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Lo

 0.2. Size:214K  microsemi
apt30f60j.pdf pdf_icon

T30F

APT30F60J 600V, 31A, 0.15 Max, trr 270ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high

 0.3. Size:375K  inchange semiconductor
apt30f50b.pdf pdf_icon

T30F

isc N-Channel MOSFET Transistor APT30F50B FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R = 0.19 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

Otros transistores... BUW13W, T06, T2141, T2141F, T2142, T2142F, T25, T30, A1013, T430, 2PD601AW, 2SA1235A, 2SA1586, 2SA1797, 2SB1132, 2SB1188, 2SB1189