2SB1308 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SB1308
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.5 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 50 MHz
   Capacitancia de salida (Cc): 60 pF
   Ganancia de corriente contínua (hfe): 82
   Paquete / Cubierta: SOT89

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2SB1308 Datasheet (PDF)

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2sb1308.pdf

2SB1308TransistorsTransistors2SD1963(94S-166-B204)(94S-342-D204)290

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2sb1308 2sd1963.pdf

2SB1308TransistorsTransistors2SD1963(94S-166-B204)(94S-342-D204)290Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference o

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2SB1 308TRANSISTOR SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Power Transistor Excellent DC current Gain 3. EMITTER Low Collector-emitter Saturation Voltage MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -6 V IC Collector Current -3 A PC C

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FM120-M WILLASTHRU2SB1308 SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPa c kage outlineFeaturesTRANSISTOR (PNP) esign, excellent power dissipation offers Batch process dSOT-89 better reverse leakage current and thermal resistance.FEATURES SOD-123H Low p Powe

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SMD Type TransistorsPNP Transistors2SB13081.70 0.1 Features Power Transistor Excellent DC current Gain Low Collector-emitter Saturation Voltage0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltage

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2sb1308-r.pdf

SMD Type TransistorsPower Transistor2SB1308FeaturesLow saturation voltage, typicallyVCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A.Excellent DC current gain characteristics.Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -30 VCollector-emitter voltage VCEO -20 VEmitter-base voltage VEBO -6 VCollector current IC -3 ACollector

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2sb1308-q.pdf