A92 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

A92 -0.5A , -300V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High Voltage. G H1Emitter 1112Base 222J3Collector 333CLASSIFICATION OF hFE (2) A DMillimeter Product-Rank A92-A A92-B1 A92-B2 A92-C REF. BMin. Max. A 4.40 4.70 Range

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsTO-92 A92 TRANSISTOR (PNP)FEATURES 1.EMITTER High voltage 2.BASE 3.COLLECTOR Equivalent Circuit A92 A92 Z Z=Rank of hFE 1ORDERING INFORMATION Part Number Package Packing Met

A92SOT-89-3L TRANSISTOR (PNP) FEATURES 1. BASE Low Collector-Emitter Saturation Voltage High Breakdown Voltage 2. COLLECTOR 3. EMITTER MARKING: A92 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -310 V VCEO Collector-Emitter Voltage -305 V VEBO Emitter-Base Voltage -5 V IC Collector Current -500 mA PC C

A92(PNP)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. BASE 3. COLLECTOR Features High voltage MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA Dimensions in inches and (millimeters)PC Colle

TO-92 Plastic-Encapsulate TransistorsA92 TRANSISTOR (PNP)TO-92TO-92TO-92TO-92FEATURESFEATURESFEATURESFEATURESHigh voltageHigh voltageHigh voltageHigh voltage1. EM T T E RMAXIMUM RATINGS (TA=25 unless otherwise noted)MAXIMUM RATINGS (TA=25 unless otherwise noted)MAXIMUM RATINGS (TA=25 unless otherwise noted)MAXIMUM RATINGS (TA=25 unless otherwise noted)2.

SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 A92 TRANSISTOR (PNP) FEATURES 1.EMITTER High voltage 2.BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3.COLLECTOR Symbol Parameter Value UnitsVCBO Collector-Base Voltage -310 V VCEO Collector-Emitter Voltage -305 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Co

A92 TRANSISTOR(NPN)SOT-89-3L SOT-89-3LSOT-89-3L Plastic-Encapsulate Transistors Features Complementary to A42 Power Dissipation of 500mW High Breakdown Voltage Low Collector-Emitter Saturation Voltage Mechanical Data SOT-89-3L Small Outline Plastic Package Epoxy UL: 94V-0Marking: A92 Mounting Position: Any

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBTA92LT1/DHigh Voltage Transistors*MMBTA92LT1COLLECTORPNP Silicon3MMBTA93LT1*Motorola Preferred Device1BASE2EMITTER3MAXIMUM RATINGS1Rating Symbol MMBTA92 MMBTA93 Unit2CollectorEmitter Voltage VCEO 300 200 VdcCollectorBase Voltage VCBO 300 200 VdcCASE 31808, STYLE 6SOT

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPSA92/DHigh Voltage Transistors*MPSA92PNP SiliconMPSA93COLLECTOR3 *Motorola Preferred Device2BASE1EMITTER1MAXIMUM RATINGS23Rating Symbol MPSA92 MPSA93 UnitCASE 2911, STYLE 1CollectorEmitter Voltage VCEO 300 200 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 300 200 Vd

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby PZTA92T1/DHigh Voltage TransistorPZTA92T1PNP SiliconCOLLECTOR 2,4Motorola Preferred DeviceBASE1SOT223 PACKAGEPNP SILICONEMITTER 3HIGH VOLTAGE TRANSISTORSURFACE MOUNTMAXIMUM RATINGSRating Symbol Value UnitCollectorEmitter Voltage VCEO 300 Vdc4CollectorBase Voltage VCBO 300 VdcEmitte

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPSA92/DHigh Voltage Transistors*MPSA92PNP SiliconMPSA93COLLECTOR*Motorola Preferred Device32BASE1EMITTER1MAXIMUM RATINGS23Rating Symbol MPSA92 MPSA93 UnitCASE 2904, STYLE 1CollectorEmitter Voltage VCEO 300 200 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 300 200 V

PD - 93969IRHNA9260JANSR2N7426URADIATION HARDENED 200V, P-CHANNELPOWER MOSFET REF: MIL-PRF-19500/655 RAD-Hard HEXFET TECHNOLOGYSURFACE MOUNT (SMD-2)Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNA9260 100K Rads (Si) 0.154 -29A JANSR2N7426U IRHNA93260 300K Rads (Si) 0.154 -29A JANSF2N7426USMD-2International Rectifiers RAD-HardTM

DISCRETE SEMICONDUCTORSDATA SHEETMMBTA92PNP high-voltage transistorProduct specification 2004 Jan 16Supersedes data of 2000 Apr 11Philips Semiconductors Product specificationPNP high-voltage transistor MMBTA92FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 300 V).1 base2 emitterAPPLICATIONS3 collector Telephony Professi

DISCRETE SEMICONDUCTORSDATA SHEETk, halfpageM3D088MMBTA92PNP high-voltage transistorProduct specification 2000 Apr 11Philips Semiconductors Product specificationPNP high-voltage transistor MMBTA92FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 300 V).1 base2 emitterAPPLICATIONS3 collector Telephony Professional commun

DISCRETE SEMICONDUCTORS DATA SHEETPMBTA92PNP high-voltage transistorProduct data sheet 2004 Jan 22Supersedes data of 1999 Apr 13NXP Semiconductors Product data sheetPNP high-voltage transistor PMBTA92FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 300 V).1 base2 emitterAPPLICATIONS3 collector Telephony Professional com

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109PXTA92PNP high-voltage transistorProduct data sheet 2004 Dec 09Supersedes data of 1999 Apr 29 NXP Semiconductors Product data sheetPNP high-voltage transistor PXTA92FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 300 V).1 emitter2 collectorAPPLICATIONS3 base Teleph

DISCRETE SEMICONDUCTORS DATA SHEEThandbook, halfpageM3D087PZTA92PNP high-voltage transistorProduct specification 1999 Apr 14Supersedes data of 1997 May 22 Philips Semiconductors Product specificationPNP high-voltage transistor PZTA92FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 300 V).1 base2, 4 collectorAPPLICATIONS3 emi

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109PXTA92PNP high-voltage transistor1999 Apr 29Product specificationSupersedes data of 1997 Jun 20Philips Semiconductors Product specificationPNP high-voltage transistor PXTA92FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 300 V).1 emitter2 collectorAPPLICATIONS3 base

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PMBTA92PNP high-voltage transistor1999 Apr 13Product specificationSupersedes data of 1998 Jul 21Philips Semiconductors Product specificationPNP high-voltage transistor PMBTA92FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 300 V).1 base2 emitterAPPLICATIONS3 collector

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186MPSA92PNP high-voltage transistor1999 Apr 27Product specificationSupersedes data of 1997 Apr 22Philips Semiconductors Product specificationPNP high-voltage transistor MPSA92FEATURES PINNING Low current (max. 500 mA)PIN DESCRIPTION High voltage (max. 300 V).1 collector2 baseAPPLICATIONS3 emitter

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D087PZTA92PNP high-voltage transistor1999 Apr 14Product specificationSupersedes data of 1997 May 22Philips Semiconductors Product specificationPNP high-voltage transistor PZTA92FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 300 V).1 base2, 4 collectorAPPLICATIONS3 emitte

MMBTA92Small signal PNP transistorFeatures Miniature SOT-23 plastic package for surface mounting circuits Tape and reel packaging The NPN complementary type is MMBTA42Applications Video amplifier circuits (rgb cathode current control)SOT-23 Telephone wireline interface (hook switches, dialer circuits)Description Figure 1. Intenal schematic diagramThe d

STPSA92SMALL SIGNAL PNP TRANSISTORPRELIMINARY DATAOrdering Code Marking Package / ShipmentSTPSA92 PSA92 TO-92 / BulkSTPSA92-AP PSA92 TO-92 / Ammopack SILICON EPITAXIAL PLANAR PNP HIGHVOLTAGE TRANSISTOR TO-92 PACKAGE SUITABLE FORTHROUGH-HOLE PCB ASSEMBLY THE NPN COMPLEMENTARY TYPE ISSTPSA42TO-92 TO-92APPLICATIONS Bulk Ammopack VIDEO AMPLIFIER CIRCUITS (RGBCATH

STZTA92SMALL SIGNAL PNP TRANSISTORPRELIMINARY DATAType MarkingSTZTA92 ZTA92 SILICON EPITAXIAL PLANAR PNP HIGHVOLTAGE TRANSISTOR SOT-223 PLASTIC PACKAGE FOR2SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING3 THE NPN COMPLEMENTARY TYPE IS2STZTA42 1APPLICATIONS SOT-223 VIDEO AMPLIFIER CIRCUITS (RGBCATHODE CURRENT CONTROL) TELEPHONE WIRELINE INTERFACE (HOOK

STPSA92SMALL SIGNAL PNP TRANSISTORPRELIMINARY DATAOrdering Code Marking Package / ShipmentSTPSA92 PSA92 TO-92 / BulkSTPSA92-AP PSA92 TO-92 / Ammopack SILICON EPITAXIAL PLANAR PNP HIGHVOLTAGE TRANSISTOR TO-92 PACKAGE SUITABLE FORTHROUGH-HOLE PCB ASSEMBLY THE NPN COMPLEMENTARY TYPE ISSTPSA42TO-92 TO-92APPLICATIONS Bulk Ammopack VIDEO AMPLIFIER CIRCUITS (RGBCATH

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

MPSA92 MMBTA92 PZTA92CCEECBC TO-92BSOT-23BSOT-223EMark: 2DPNP High Voltage AmplifierThis device is designed for high voltage driver applications.Sourced from Process 76.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 300 VVCBO Collector-Base Voltage 300 VVEBO Emitter-Base Voltage 5.0

February 2008KSA928AAudio Power Amplifier Complement to KSC2328A Collector Power Dissipation : PC=1W 3 Watt Output ApplicationTO-92L11. Emitter 2. Collector 3. BaseAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -30 VVCEO Collector-Emitter Voltage -30 VVEBO Emitter-Base Voltage -5 VIC Collector

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

DISCRETE SEMICONDUCTORS DATA SHEETPMBTA92PNP high-voltage transistorProduct data sheet 2004 Jan 22Supersedes data of 1999 Apr 13NXP Semiconductors Product data sheetPNP high-voltage transistor PMBTA92FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 300 V).1 base2 emitterAPPLICATIONS3 collector Telephony Professional com

PXTA92300 V, 100 mA PNP high-voltage transistorRev. 6 27 September 2011 Product data sheet1. Product profile1.1 General descriptionPNP high-voltage transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.NPN complement: PXTA42.1.2 Features and benefits High breakdown voltage AEC-Q101 qualified Medium power and flat

PMSTA92PNP high-voltage transistor16 May 2019 Product data sheet1. General descriptionPNP high-voltage transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD)plastic package.NPN complement: PMSTA422. Features and benefits Very small package High voltage AEC-Q101 qualified3. Applications Primarily intended for use in telephony and professional c

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

KSA928A PNP EPITAXIAL SILICON TRANSISTORAUDIO POWER AMPLIFIERTO-92L Complement to KSC2328A Collector Dissipation PC=1W 3 Watt Output ApplicationABSOLUTE MAXIMUM RATINGS (T =25 )ACharacteristic Symbol Rating UnitCollector-Base Voltage VCBO -30 VCollector-Emitter Voltage VCEO -30 VEmitter-Base Voltage VEBO -5 VCollector Current IC -2 ACollector Dissipation PC 1

SMBTA 92MPNP Silicon High-Voltage Transistor4 High breakdown voltage Low collector-emitter saturation voltage 5 Complementary type: SMBTA 42M (NPN)321VPW05980Type Marking Ordering Code Pin Configuration PackageSMBTA 92M s2D Q62702-A1244 1 = B 2 = C 3 = E 4=n.c. 5 = C SCT-595Maximum RatingsParameter Symbol Value UnitCollector-emitter voltage VCEO 300 VColle

PNP Silicon High-Voltage Transistors PZTA 92PZTA 93 High breakdown voltage Low collector-emitter saturation voltage Complementary types: PZTA 42, PZTA 43 (NPN)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3 4PZTA 92 PZTA 92 Q62702-Z2037 B C E C SOT-223PZTA 93 PZTA 93 Q62702-Z2038Maximum RatingsParameter Symbol Values UnitPZTA 92 PZTA 93Collect

PNP Silicon High Voltage Transistors SXTA 92SXTA 93 High breakdown voltage Low collector-emitter saturation voltageType Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3SXTA 92 2D Q68000-A8393 B C E SOT-89SXTA 93 2E Q68000-A8651Maximum RatingsParameter Symbol Values UnitSXTA 92 SXTA 93Collector-emitter voltage VCE0 300 200 VCollector-base voltage VCB

PNP Silicon Transistors for High Voltages SMBTA 92SMBTA 93 High breakdown voltage Low collector-emitter saturation voltage Complementary types: SMBTA 42, SMBTA 43 (NPN)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3SMBTA 92 s2D Q68000-A6479 B E C SOT-23SMBTA 93 s2E Q68000-A6483Maximum RatingsParameter Symbol Values UnitSMBTA 92 SMBTA 93Collect

SiA922EDJwww.vishay.comVishay SiliconixDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Thermally enhanced PowerPAK SC-70 package0.064 at VGS = 4.5 V 4.5a- Small footprint area- Low on-resistance0.072 at VGS = 3.0 V 4.5a30 3.5 nC Typical ESD protection: 1500 V (HBM)0.080 at

SiA923EDJVishay SiliconixDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.054 at VGS = - 4.5 V - 4.5a New Thermally Enhanced PowerPAK SC-70 0.070 at VGS = - 2.5 V - 4.5aPackage- 20 9.5 nC0.104 at VGS = - 1.8 V - 4.5a - Small Fo

SiA921EDJVishay SiliconixDual P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.059 at VGS = - 4.5 V - 4.5a- 20 4.9 nC New Thermally Enhanced PowerPAK SC-70 0.098 at VGS = - 2.5 V - 4.5aPackage- Small Footprint Area- Low On-Resistance

New ProductSiA929DJVishay SiliconixDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Gen III Power MOSFET0.064 at VGS = - 10 V - 4.5a Thermally Enhanced PowerPAK0.078 at VGS = - 4.5 V - 30- 4.5a 6.6 nCSC-70 Package0.120 at VGS = - 2.5

New ProductSiA920DJVishay SiliconixDual N-Channel 8 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.027 at VGS = 4.5 V 4.5 Thermally Enhanced PowerPAK0.031 at VGS = 2.5 V 4.5SC-70 Package8 0.036 at Vgs = 1.8 V 4.5 4.8 nC- Small Footprint Area0.

SiA921EDJVishay SiliconixDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) Thermally Enhanced PowerPAK SC-70 0.059 at VGS = - 4.5 V Package- 4.5a- 20 4.9 nC- Small Footprint Area0.098 at VGS = - 2.5 V - 4.5a- Low On-Resistance Typical ESD Protection: 1700 VPowerPAK SC-70-6 Dual

SiA923AEDJwww.vishay.comVishay SiliconixDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Thermally Enhanced PowerPAK SC-70 Package0.054 at VGS = -4.5 V -4.5 a- Small Footprint Area0.070 at VGS = -2.5 V -4.5 a- Low On-Resistance-20 9.5 nC0.104 at VGS = -1.8 V -4.5 a Typical ESD Prot

CMPTA42 NPNCMPTA92 PNPwww.centralsemi.comSURFACE MOUNTCOMPLEMENTARYDESCRIPTION:HIGH VOLTAGEThe CENTRAL SEMICONDUCTOR CMPTA42 and SILICON TRANSISTORSCMPTA92 are complementary surface mount epoxy molded silicon planar epitaxial transistors designed for high voltage applications.MARKING CODES: CMPTA42: C1DCMPTA92: C2DSOT-23 CASEMAXIMUM RATINGS: (TA=25C) SYMBOL CMPTA

CMPTA42E NPN CMPTA92E PNPENHANCED SPECIFICATIONwww.centralsemi.comSURFACE MOUNTDESCRIPTION:COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMPTA42E and HIGH VOLTAGECMPTA92E are Enhanced versions of the CMPTA42 SILICON TRANSISTORSand CMPTA92 complementary surface mount high voltage transistors.MARKING CODES: CMPTA42E: C1DECMPTA92E: C2DEFEATURED ENHANCED SPECIFICATIONS:

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MMBTA92 300V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 300V Case: SOT-23 Ideal for Medium Power Amplification and Switching Case Material: Molded Plastic, Green Molding Compound; Complementary NPN Type: MMBTA42 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Moisture Sens

SOT8 SI I O A A S TA HI H O TA T A SISTO ISS A A Y 6 T T T T I D T I DSOT8 A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T I T IT DITI II V V I I V I II i V V I I V I i V V I I V I II I V V I i I V V I II i V V I I i V I i V V I I i V I i I

MMSTA92 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-323 Complementary NPN Type Available (MMSTA42) CDim Min Max Ideal for Low Power Amplification and Switching A 0.25 0.40 Lead Free/RoHS Compliant (Note 2) B CB 1.15 1.35 "Green" Device (Notes 3 and 4) B EC 2.00 2.20 Mechanical Data GD 0.65 Nomina

DXTA92 PNP SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary NPN Type Available (DXTA42) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) SOT89-3L Mechanical Data COLLECTOR Case: SOT89

MMBTA92 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Epitaxial Planar Die Construction A SOT-23 Complementary NPN Types Available (MMBTA42) CDim Min Max Ideal for Medium Power Amplification and Switching A 0.37 0.51 B C Lead, Halogen and Antimony Free, RoHS Compliant B 1.20 1.40 "Green"

PNP SILICON PLANARFXTA92HIGH VOLTAGE TRANSISTORISSUE 1 MARCH 94 T V I V I TI T I i II i i T E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V i II I Di i i T 8 i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI II V V I I V I II i V V I I V I i

FMMTA92 300V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data Case: SOT23 BVCEO > -300V Case Material: Molded Plastic, Green Molding Compound IC = -200mA High Continuous Collector Current UL Flammability Classification Rating 94V-0 Complementary Type FMMTA42 Moisture Sensitivity: Level 1 per J-STD-020 Totally Lead-Free & Ful

SOT SI I O A A ZTA HI H O TA T A SISTO ISS A A Y 6 T i I I TI i I i i TV i Ii I T T T T I D T I D VI T I A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V I i II I Di i i T i T T T T I A HA A T ISTI S a Ta T I T IT DITI II V V I I V I II i V V I I V I i V V I I V I II I V V I i I V V I I

DZTA92 PNP SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction 3 Complementary NPN Type Available (DZTA42) 2 Ideally Suited for Automated Assembly Processes 1 Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) 4 "Green" Device (Note 2) SOT-223 Mechanical Data COLLECTOR3

SMBTA92/MMBTA92PNP Silicon High-Voltage Transistors Suitable for video output stages in TV sets23 and switching power supplies1 High breakdown voltage Low collector-emitter saturation voltage Complementary types: SMBTA42 / MMBT42 (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageSMBTA92/MMBTA92

SMBTA92/MMBTA92PNP Silicon High-Voltage Transistors Suitable for video output stages in TV sets23 and switching power supplies1 High breakdown voltage Low collector-emitter saturation voltage Complementary types: SMBTA92 / MMBT92 (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q101Type Marking Pin Configuration PackageSMBTA92/MMBTA

MCCMicro Commercial ComponentsTMMMSTA9220736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP Small SignalRoHS Compliant. See ordering information) Epitaxial Planar Die ConstructionTransistors Ideal for Medium Power Amplification and Swi

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMPSA92Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Through Hole PackagePNP Silicon High Operating & Storage Temperature: -55C to +150C Marking : A92Voltage Transistor Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ord

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsMMBTA92CA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Surface Mount SOT-23 PackagePNP Silicon High Capable of 300mWatts of Power Dissipation Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Voltage Transistor

MMBTA92L, SMMBTA92L,MMBTA93LHigh Voltage TransistorsPNP Siliconhttp://onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASEMAXIMUM RATINGS2Rating Symbol 92 93 UnitEMITT

PZTA92T1G,NSVPZTA92T1GHigh Voltage TransistorPNP Siliconwww.onsemi.comFeatures Complement to PZTA42T1GSOT-223 PACKAGE NSV Prefix for Automotive and Other Applications RequiringPNP SILICONUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapableHIGH VOLTAGE TRANSISTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSURFACE M

MMBTA92L, SMMBTA92L,MMBTA93LHigh Voltage TransistorsPNP Siliconhttp://onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASEMAXIMUM RATINGS2Rating Symbol 92 93 UnitEMITT

PZTA92T1G,NSVPZTA92T1GHigh Voltage TransistorPNP Siliconhttp://onsemi.comFeatures Complement to PZTA42T1GSOT-223 PACKAGE NSV Prefix for Automotive and Other Applications RequiringPNP SILICONUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapableHIGH VOLTAGE TRANSISTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSURFAC

PZTA92T1High Voltage TransistorPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantSOT-223 PACKAGEMAXIMUM RATINGS (TC = 25C unless otherwise noted)PNP SILICONRating Symbol Value UnitHIGH VOLTAGE TRANSISTORCollector-Emitter Voltage VCEO -300 VdcSURFACE MOUNTCollector-Base Voltage VCBO -300 VdcEmitter-Base V

MMBTA92L, SMMBTA92L,MMBTA93LHigh Voltage TransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASEMAXIMUM RATINGS2Rating Symbol 92 93 UnitEMITTER

PZTA92T1High Voltage TransistorPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantSOT-223 PACKAGEMAXIMUM RATINGS (TC = 25C unless otherwise noted)PNP SILICONRating Symbol Value UnitHIGH VOLTAGE TRANSISTORCollector-Emitter Voltage VCEO -300 VdcSURFACE MOUNTCollector-Base Voltage VCBO -300 VdcEmitter-Base V

MPSA92, MPSA93High Voltage TransistorsPNP SiliconFeatureshttp://onsemi.com Pb-Free Packages are Available*MAXIMUM RATINGSRating Symbol Value UnitTO-92Collector-Emitter Voltage VCEO Vdc(TO-226AA)-200MPSA931CASE 29-111-3002MPSA92 233Collector-Base Voltage VCBO Vdc STRAIGHT LEAD BENT LEAD-200 BULK PACK TAPE & REELMPSA93-300AMMO PACKMPSA92Emi

MMBTA92LT1G,MMBTA93LT1GHigh Voltage TransistorsPNP Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant3MAXIMUM RATINGS1Rating Symbol 92 93 UnitBASECollector-Emitter Voltage VCEO -300 -200 VdcCollector-Base Voltage VCBO -300 -200 Vdc2EMITTEREmitter-Base Voltage VEBO -5.0 -5.0 VdcCollector Curren

Transistor2SA921Silicon PNP epitaxial planer typeFor high breakdown voltage low-noise amplificationUnit: mmComplementary to 2SC19805.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Low noise voltage NV.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 120 V+0.2 +0.2Collector to emitter voltage VCEO 12

Transistor2SA921Silicon PNP epitaxial planer typeFor high breakdown voltage low-noise amplificationUnit: mmComplementary to 2SC19805.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Low noise voltage NV.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 120 V+0.2 +0.2Collector to emitter voltage VCEO 12

UNISONIC TECHNOLOGIES CO., LTD MMBTA92 PNP SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR 3 DESCRIPTION The UTC MMBTA92 are high voltage PNP transistors, designed 1for telephone signal switching and for high voltage amplifier. 2SOT-23 FEATURES (JEDEC TO-236)* High Collector-Emitter voltage: VCEO= -300V * Collector Dissipation: PC(MAX)=350mW ORDERING INFOR

UNISONIC TECHNOLOGIES CO., LTD PZTA92/93 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC PZTA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. FEATURES * Collector-emitter voltage: VCEO=-300V (UTC PZTA92) VCEO=-200V (UTC PZTA93) * Complement to UTC PZTA42/43 * Collector power dissipation:

UNISONIC TECHNOLOGIES CO., LTD MPSA92M PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES * Collector-Emitter voltage: V =-300V CEO* Collector Dissipation: P =625mW C(MAX)* Low collector-Emitter saturation voltage 1TO-92 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3MPSA92ML-T92-B MPSA92MG-T92-B TO

UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTORHIGH VOLTAGE PNPTRANSISTORDESCRIPTION The UTC MPSA92/93 are high voltage PNPtransistors, designed for telephone signal switchingand for high voltage amplifier.FEATURES1* High Collector-Emitter voltage: VCEO=-300V(UTC MPSA92) VCEO=-200V(UTC MPSA93)*Collector Dissipation:TO-92 Pc(max)=625mW1:EMITTER 2:BASE 3:COLLECTOR

UNISONIC TECHNOLOGIES CO., LTD PZTA92/93 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC PZTA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. FEATURES * Collector-emitter voltage: VCEO=-300V (UTC PZTA92) VCEO=-200V (UTC PZTA93) * Complement to UTC PZTA42/43 * Collector power dissipat

UNISONIC TECHNOLOGIES CO., LTD 2SA928A PNP SILICON TRANSISTOR AUDIO POWER AMPLIFIER FEATURES * Collector Dissipation PC=1 W * 3 W Output Application * Complement of 2SC2328A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3- 2SA928AG-AB3-R SOT-89 B C E Tape Reel2SA928AL-x-T92-B 2SA928AG-x-T92-B TO-92 E C B Tape Box

MMBTA92PNP SiliconElektronische Bauelemente General Purpose TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeSOT-23FEATURESDim Min MaxPb-free is available.A 2.800 3.040Power dissipation & Collector currentB 1.200 1.400 Pcm: 0.3W Icm: -0.3AHigh voltage V(BR): -300V C 0.890 1.110AD 0.370 0.500LG 1.780 2.0403H 0.013 0.100COLLECTO

MMBTA92WPNP SiliconElektronische Bauelemente General Purpose TransistorMMBTA92W300VCE = 10 VdcTJ = +125C25020025C150-55C1005000.1 1.0 10 100IC, COLLECTOR CURRENT (mA)Figure 1. DC Current Gain100150Cib @ 1MHz1301101090Ccb @ 1MHz701.050TJ = 25CVCE = 20 Vdc30F = 20 MHz0.1100.1 1.0 10 100 10001 3 5 7 9 11 13 15 17 19 2

PZTA92PNP Transistor Elektronische BauelementeEpitaxial Planar TransistorRoHS Compliant ProductSOT-223DescriptionThe PZTA92 is designed for application asa viedo output to drive color CRT, or as a dialer circuit in electronics telephone.MillimeterMillimeterREF. REF. Min. Max. Min. Max. A 9 2 A 6.70 7.30 B 13 TYP. Date CodeC 2.90 3.10 J 2.30 REF. D 0.02 0.10 1 6

KSA928ATL -2A , -30V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92L FEATURE G H Audio power amplifier 1Emitter 111J 2Collector 2223Base 333A DMillimeter CLASSIFICATION OF hFE REF. Min. Max. A 4.70 5.10 BProduct-Rank KSA928ATL-O KSA928ATL-Y B

2SBA92 -0.2 A, -310 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES The 2SBA92 is designed for applications as a video output 4to drive color CRT, or as a dialer circuit in electronics telephone. 1 23AMARKING ECA92 B DF GPACKAGE INFORMATION H KJ

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR EPITAXIAL TRANSISTOR MPSA92TO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with "T"CBEHigh Voltage TransistorsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITSVCBOCollector Base Voltage 300 VVCEOCollector Emitter Voltage 300 V

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageCMBTA92CMBTA93SILICON EPITAXIAL TRANSISTORSPNP transistorMarkingPACKAGE OUTLINE DETAILSCMBTA92 = 2D ALL DIMENSIONS IN mmCMBTA93 = 2EPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCMBT A92 A93Collectorbase

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBTA92 TRANSISTOR (PNP) 1. BASE FEATURES 2. EMITTER 3. COLLECTOR High voltage transistor MARKING:2D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Bas

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors MMSTA92 TRANSISTOR (PNP) SOT323 FEATURES Small Surface Mount Package Complementary to MMSTA42 Ideal for Medium Power Amplification and Switching MARKING:K3R 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3.

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors THA92TTD03 TRANSISTOR C WBFBP-03A DESCRIPTION (1.61.60.5) TOP PNP Epitaxial Silicon Transistor unit: mm FEATURES B E Power dissipation PCM : 0.15 W (Ta=25) C 1. BASE APPLICATION 2. EMITTER High Voltage Amplifier BACK 3. COLLECTOR For portable equipment

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-223(8R) Plastic-Encapsulate TransistorsPZTA92 TRANSISTOR (PNP)SOT-223 FEATURES High Voltage Driver Applications1. BASE2. COLLECTOR3. EMITTERMARKING: Equivalent Circuit MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate TransistorsTO-92MOD KSA928A TRANSISTOR(PNP)FEA TURE Audio Power Amplifier 1.EMITTER Complement to Application 2.COLLECTOR 3.BASE Equivalent Circuit A928A=Device code Solid dot = Greenmolding compound device, if none, the normal device XXX=Code ORDERING INFORMA

SEMICONDUCTOR PZTA92TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION. ATELEPHONE APPLICATION.HL2FEATURESComplementary to PZTA42.KE B1 3JMAXIMUM RATING (Ta=25 )GF FCHARACTERISTIC SYMBOL RATING UNITVCBO -300 VCollector-Base VoltageDIM MILLIMETERS1 2 3_A 6.5 + 0.2VCEO -300 VCollector-Emitter VoltageC_B 3.5 + 0.2C 1.8 M

SEMICONDUCTOR MMBTA92/93TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION.EL B LFEATURESDIM MILLIMETERSComplementary to MMBTA42/43._+2.93 0.20AB 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.20MAXIMUM RATING (Ta=25 )1G 1.90H 0.95CHARACTERISTIC SYMBOL RATING UNITJ 0.13+0.10/-0.05K 0.00 ~ 0.1

SEMICONDUCTOR MPSA92/93TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION.B CFEATURESComplementary to MPSA42/43.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDMAXIMUM RATING (Ta=25)D 0.45E 1.00CHARACTERISTIC SYMBOL RATING UNITF 1.27G 0.85MPSA92 -300 H 0.45Collector-Base_VCBO HV J 14.00 + 0.50

MMBTA92TRANSISTOR(PNP)SOT-23 FEATURES 1. BASE 2. EMITTER High voltage transistor 3. COLLECTOR MARKING:2D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -300 mA PC Collector Power Dissipation 300 m

MMSTA92TRANSISTOR(PNP)SOT323 FEATURES Small Surface Mount Package Complementary to MMSTA42 Ideal for Medium Power Amplification and Switching MARKING:K3R 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage -310 V CBOV Collector-Emitter Voltage -305 V CEOV Emitter-

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GMA92 GMA93MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol UnitGMA92 GMA93 Collector-Emitter VoltageVCEO -300 -200 Vdc-

MMBTA92 SOT-23 Transistor(PNP)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features High voltage transistor MARKING:2D Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous

KSA928A TO-92MOD Transistor (PNP)TO-92MOD1.EMITTER 1 22.COLLECTOR 3 3.BASE Features5.8006.200 Audio power amplifier Complement to Application 8.4008.800MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.9001.100Symbol Parameter Value Units 0.4000.600VCBO Collector-Base Voltage -30 V13.80014.200VCEO Collector-Emitter Voltage -30 V VEBO Emitte

KSA928A TO-92L Transistor (PNP)TO-92L1.EMITTER 2.COLLECTOR 3.BASE 4.7005.100 2 3 1Features 7.800 Audio power amplifier 8.200Complement to Application 0.6000.800MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units0.3500.550VCBO Collector-Base Voltage -30 V13.80014.200VCEO Collector-Emitter Voltage -30 V VEBO Emitter-

MMBTA92COLLECTORHigh-Voltage PNP Transistor33Surface Mount112BASEP b Lead(Pb)-Free2SOT-23EMITTERMaximum RatingsRating Symbol Value UnitCollector-E m itter Voltage V -3 0 0 VdcCE OCollector-B as e Voltage VCB O -3 0 0 VdcE m itter-B as e VOltage VE B O -5 . 0 VdcCollector Current-Continuous ICmAdc-5 0 0Thermal CharacteristicsCharacteristics Symbol

MPSA92High-Voltage PNP TransistorsP b Lead(Pb)-FreeTO-921. EMITTER122. BASE33. COLLECTORABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating SymbolValue UnitCollector-Emitter Voltage VCEO -305 VdcCollector-Base Voltage VCBO -310 VdcEmitter-Base Voltage VEBO-5.0 VdcCollector Current IC-500 mAdcPD 0.625Total Device Dissipation T =25 C WAJunction Temperature T 150

PZTA92COLLECTORHigh-Voltage PNP Transistor2,441. BASESurface Mount2.COLLECTOR 3.EMITTER 1124.COLLECTOR3BASEP b Lead(Pb)-Free3SOT-223EMITTERMaximum RatingsRating Symbol Value UnitCollector-E m itter Voltage V -3 0 0 VdcCE OCollector-B as e Voltage VCB O -3 0 0 VdcE m itter-B as e Vo ltage VE B O-5 . 0 VdcICmAdcCollector Current-Continuous -5

KSA928AWEITRONPNP TransistorCOLLECTOR2.P b Lead(Pb)-Free1. EMITTER3.2. COLLECTORBASE3. BASE1.EMITTERTO-92LMAXIMUM RATINGS (TA=25 unless otherwise noted)valueParameter Symbol UnitsCollector-Base Voltage VCBO -30 V-30 VCollector-Emitter Voltage VCEO-5 VEmitter-Base Voltage VEBO-2 ACollector Current -Continuous ICCollector Power Dissipation PC 1 W

FM120-M WILLASTHRUMMBTA9xLT1FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VHigh Voltage TransistorSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize board

Spec. No. : HE6352HI-SINCERITYIssued Date : 1992.12.15Revised Date : 2004.07.21MICROELECTRONICS CORP.Page No. : 1/5HMPSA92PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HMPSA92 is designed for application as a video output to drive color CRT, oras a dialer circuit in electronics telephone.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature .......

Spec. No. : HE6354HI-SINCERITYIssued Date : 1993.01.15Revised Date : 2005.02.05MICROELECTRONICS CORP.Page No. : 1/4HMPSA92MPNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HMPSA92M is designed for application as a video output to drive color CRT, oras a dialer circuit in electronics telephone.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature......

Spec. No. : HE6845HI-SINCERITYIssued Date : 1994.07.29Revised Date : 2004.09.07MICROELECTRONICS CORP.Page No. : 1/4HMBTA92PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HMBTA92 is designed for application as a video output to drive color CRT, or asa dialer circuit in electronics telephone.SOT-23Absolute Maximum Ratings Maximum TemperaturesStorage Temperature.......

Analog Power AMA921PDual P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)79 @ VGS = -4.5V -4.2 Low thermal impedance -20110 @ VGS = -2.5V -3.6 Fast switching speed DFN2x2-6L Typical Applications: Battery Powered Instruments Portable Computing Mobile Phones GPS Units and

Analog Power AMA920NDual N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARYKey Features:rDS(on) (m)VDS (V) ID(A) Low r trench technologyDS(on)58 @ VGS = 4.5V4.6 Low thermal impedance2082 @ VGS = 2.5V3.9 Fast switching speedTypical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion CircuitsABSOLUTE MAXIMUM RA

Analog Power AMA922NDual N-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)23 @ VGS = 4.5V6.6 Low thermal impedance 2033 @ VGS = 2.5V5.6 Fast switching speed DFN2x2-6L Typical Applications: Bottom View Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors MPSA92 TRANSISTOR (PNP) TO-92 FEATURES 1. EMITTER Power dissipation 2. BASE PCM: 0.625 W (Tamb=25) 3. COLLECTOR Collector current ICM: -0.5 A 1 2 3 Collector-base voltage V(BR)CBO: -300 V Operating and storage junction temperature range TJ, Tstg: -55 to +150

Spec. No. : C308A3 Issued Date : 2003.06.27 CYStech Electronics Corp.Revised Date : 2013.11.06 Page No. : 1/6 General Purpose PNP Epitaxial Planar Transistor BTPA92A3Description High breakdown voltage. (BV =-300V) CEO Low collector output capacitance. Ideal for chroma circuit. Pb-free lead plating and halogen-free package Symbol Outline BTPA92A3 TO-

Spec. No. : C809K3 Issued Date : 2013.04.19 CYStech Electronics Corp.Revised Date : 2013.12.25 Page No. : 1/8 PNP Epitaxial Planar Transistor BTA928AK3Features Low V , V = -147mV (Typ.) @ I /I =-500mA/-10mA CE(SAT) CE(SAT) C B Complementary to BTC2328AK3 Pb-free lead plating and halogen-free package Symbol Outline BTA928AK3 TO-92L BBase CCollector

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBTA92 TRANSISTOR (NPN) FEATURES High breakdown voltage Complementary to MMBTA42 MARKING:2D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units

MMBTA92 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features ,,, MMBTA42 High voltage, low saturation voltage, low collector output capacitance, complementary pair with MMBTA42. / Applications

KSA928T(BR3CG928T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features KSC2328T(BR3DG2328T)Complementary pair with KSC2328T(BR3DG2328T). / Applications Audio frequency amplifier applications. / Equivale

MPSA92 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features , ,, MPSA42 High voltage low saturation, low collector output capacitance, complementary pair with MPSA42. / Applications

KSA928A Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92LM PNP Silicon PNP transistor in a TO-92LM Plastic Package. / Features KSC2328A Complementary pair with KSC2328A. / Applications Audio frequency amplifier applications. / Equivalent Circuit / P

MPSA92I(BR3DG92I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 PNP Silicon PNP transistor in a TO-251 Plastic Package. / Features ,,, MPSA42I(BR3CG42I) High voltage, Low saturation voltage, low collector capacitance output, complementary pair with MPSA42I(BR3CG42I).

MMBTA92T Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features ,,, MMBTA42T High voltage, low saturation voltage, low collector output capacitance, complementary pair with MMBTA42T. / Applications

MPSA92D(BR3CG92D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 PNP Silicon PNP transistor in a TO-252 Plastic Package. / Features ,,, MPSA42D(BR3DG42D) High voltage, low saturation voltage, low collector output capacitance, complementary pair with MPSA42D(BR3DG42D).

MMBTA92 / MMBTA93 PNP Silicon High Voltage Transistors for high voltage switching and amplifier applications. TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage MMBTA92300 V -VCBO MMBTA93200 Collector Emitter Voltage MMBTA92 300 V -VCEO MMBTA93 200 5 VEmitter Base Voltage -VEBO 500 mACollector Cur

MPSA92 / 93 PNP Silicon Expitaxial Planar Transistor for high voltage switching and amplifier applications. As complementary type the NPN transistor MPSA42 and MPSA 43 are recommended. On special request, these transistors can be 1. Emitter 2. Base 3. Collector manufactured in different pin configurations. TO-92 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Paramete

LESHAN RADIO COMPANY, LTD.High Voltage TransistorPNP SiliconLMBTA92LT1GFEATURELMBTA93LT1G High voltage.S-LMBTA92LT1G For Telephony or Professional communication equipment applications. We declare that the material of product compliance with RoHS requirements.S-LMBTA93LT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requireme

LESHAN RADIO COMPANY, LTD.High Voltage TransistorPNP SiliconLMBTA92LT1GFEATURELMBTA93LT1G High voltage.S-LMBTA92LT1G For Telephony or Professional communication equipment applications. We declare that the material of product compliance with RoHS requirements.S-LMBTA93LT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requireme

LESHAN RADIO COMPANY, LTD.High Voltage TransistorPNP SiliconLMBTA92LT1GFEATURELMBTA93LT1G High voltage.S-LMBTA92LT1G For Telephony or Professional communication equipment applications. We declare that the material of product compliance with RoHS requirements.S-LMBTA93LT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requireme

A928 PNP silicon APPLICATION: Audio Power Amplifier Applications.MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO -30 VCollector-emitter voltage VCEO -30 VTO-92L11. Emitter 2. Collector 3. BaseEmitter-base voltage VEBO -5 VCollector current IC -2 ACollector Power Dissipation PC 1WJunction Temperature T

P N P S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HA92 HIGH VOLTAGE TRANSISTOR ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150TjJunction Temperature150PCCollector Dissipation625mW

SEMICONDUCTORMMBTA92/93TECHNICAL DATAHigh Voltage TransistorPNP SiliconFEATUREHigh voltage.For Telephony or Professional communication equipment applications.We declare that the material of product compliance with RoHS requirements. 32DEVICE MARKING AND ORDERING INFORMATION1Device Marking ShippingSOT23 MMBTA92LT1G 2D 3000/Tape&Reel MMBTA92LT3G2D 10000/Tape&Ree

SEMICONDUCTORMPSA92TECHNICAL DATAMPSA92 TRANSISTOR (PNP)B CFEATURES High voltage DIM MILLIMETERSA 4.70 MAXEB 4.80 MAXGC 3.70 MAXDD 0.55 MAXE 1.00MAXIMUM RATINGS (Ta=25 unless otherwise noted) F 1.27G 0.85H 0.45Symbol Parameter Value Unit _HJ 14.00 0.50+L 2.30F FVCBO Collector-Base Voltage -300 V M 0.51 MAXVCEO Collector-Emitter Voltage

SEMICONDUCTORFTA928ATECHNICAL DATA FEATURE Audio power amplifier Complementary to FTC2328ATO-92L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units1 EMITTER VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V 2.COLLECTOR VEBO Emitter-Base Voltage -5 V 3 BASEIC Collector Current -Continuous -2 A PC Collector Power Diss

SEMICONDUCTORMMBTA92FTECHNICAL DATATRANSISTOR (PNP) MMBTA92FAC HGFEATURES Low Collector-Emitter Saturation Voltage High Breakdown Voltage DDKF FMARKING : A92 DIM MILLIMETERSA 4.70 MAX_+B 2.50 0.20C 1.70 MAX1 2 3D 0.45+0.15/-0.10MAXIMUM RATINGS (Ta=25 unless otherwise noted) E 4.25 MAX_+F 1.50 0.10Symbol Parameter Value Unit G 0.40 T

SMD Type TransistorsPNP Transistors MMBTA92 (KMBTA92)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.1 Features3 High voltage transistor Low collector-emitter saturation voltage Complementary to MMBTA42 (NPN)1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

SMD Type TransistorsPNP TransistorsMMSTA92 (KMSTA92) Features Small Surface Mount Package Ideal for Medium Power Amplification and Switching Complementary to MMSTA421 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -310 Collector - Emitter Voltage VCEO -305 V Emitter - Base Volta

SMD Type TransistorsPNP TransistorsPZTA92 (KZTA92)Unit:mmSOT-2236.500.23.000.14 Features High Voltage Driver Applications Complementary to PZTA421 2 30.2502.30 (typ)Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -300

SMD Type TransistorsPNP Silicon Planar High Voltage TransistorFZTA92SOT-223Unit: mm3.50+0.26.50+0.2 -0.2-0.2Features0.90+0.2-0.23.00+0.1-0.1High breakdown voltage 7.00+0.3-0.341 Base2 Collector1 2 30.70+0.1-0.13 Emitter2.94.64 CollectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -300 VCollector-E

MMBTA92-AUPNP HIGH VOLTAGE TRANSISTORSOT-23 Unit : inch(mm) VOLTAGE 300 Volt POWER 250 mWattFEATURES PNP silicon, planar design High voltage (max. 300V) Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard AEC-Q101 qualifiedMECHANICAL DATA Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-750, Method 2026

CHENMKO ENTERPRISE CO.,LTDCHTA92XGPSURFACE MOUNT PNP SILICON Transistor VOLTAGE 300 Volts CURRENT 0.5 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.SC-62/SOT-89FEATURE* Suitable for high packing density.4.6MAX. 1.6MAX.1.7MAX. 0.4+0.05CONSTRUCTION*PNP SILICON Transistor+0.080.45-0.05MARKING+0.08 +0.080.40

CHENMKO ENTERPRISE CO.,LTDCHTA92ZGPSURFACE MOUNT PNP SILICON Transistor VOLTAGE 300 Volts CURRENT 0.5 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.SC-73/SOT-223FEATURE* Small flat package. ( SC-73/SOT-223 )* Suitable for high packing density. 1.65+0.156.50+0.200.90+0.052.0+0.33.00+0.10CONSTRUCTION*PNP SILIC

CHENMKO ENTERPRISE CO.,LTDCHTA92LGPSURFACE MOUNT High Voltage PNP Transistor VOLTAGE 300 Volts CURRENT 500 mAmpereAPPLICATION* Small Signal Amplifier .FEATURESOT-23* Surface mount package. (SOT-23)* Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-20mA) * Low cob. Cob=6.0pF(Typ.)* PD= 300mW (mounted on ceramic substrate).* High saturation current capability.(1)(3)

General Purpose TransistorMMBTA92-G (PNP)RoHS DeviceFeaturesSOT-230.119(3.00) -High voltage transistor.0.110(2.80)30.056(1.40)0.047(1.20)Diagram:1 20.079(2.00)Collector0.071(1.80)30.006(0.15)0.003(0.08)10.041(1.05) 0.100(2.550)Base0.035(0.90) 0.089(2.250)20.004(0.10) maxEmitter0.020(0.50)0.020(0.50) 0.012(0.30)0.012(0.30) Dimensions in

MMBTA92 TRANSISTOR PNPTRANSISTOR PNP FEATURES SOT-23 High voltage transistor 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -200 mA ICM Collector Current -Pulsed -50

RUMW UMW MMBTA92SOT-23 Plastic-Encapsulate TransistorsSOT-23 MMBTA92 TRANSISTOR (PNP) FEATURES 1. BASE 2. EMITTER High voltage transistor 3. COLLECTOR MARKING:2D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Curre

MMBTA92FEATURES High Collector Current SOT-23 Complementary to MMBTA42MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -300 V CBOV Collector-Emitter Voltage CEO -300 V V Emitter-Base Voltage -5 V EBOIC Collector Current -0.2 A P Collector Power Dissipation 300 mW CR Thermal Resistance From Junction To

MMBTA9 2SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP )Features SOT- 23High voltage transistor Marking: 2DSymbol Parameter Value Unit VCBO Collector-Base Voltage -300 V V Collector-Emitter Voltage -300 V CEOCV Emitter-Base Voltage -5 V EBOI Collector Current C-200mA ICM Collector Current - Pulsed -500 mA P Collector Power Dissipation

MMBTA92PNP High Voltage AmplifierFEATURES Epitaxial planar die construction. Complementary NPN type available (MMBTA42). Ideal for medium power amplification and switching. APPLICATIONS High voltage driver applications. SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specifiedSymbol Parameter Value UNITV collector-base voltage -300 VCBOV collector-

MMBTA92SOT-23 Plastic-Encapsulate TransistorMMBTA92 TRANSISTOR (PNP)SOT-23 FEATURES High voltage transistorMarking: 2D (3)C 1. BASE2D2. EMITTER3. COLLECTOR(1)B (2)E MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitV VCBO Collector-Base Voltage -300VCEO Collector-Emitter Voltage V -300VEBO Emitter-Base Voltage -5 V IC Co

www.msksemi.comMMBTA92-MSSemiconductor CompianceSemiconductor Compiance TRANSISTOR (PNP) FEATURES High voltage transistor 1. BASE2. EMITTERSOT23 MARKING:2D3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collecto

Jingdao Microelectronics co.LTD MMBTA92 MMBTA92SOT-23PNP TRANSISTOR3FEATURES High Voltage Transistor1MAXIMUM RATINGS (Ta=25 unless otherwise noted)Symbol 2Parameter Value Unit VCBO V 1.BASECollectorBase Voltage -3002.EMITTERVCEO VCollectorEmitter Voltage -3003.COLLECTOR VEBO VEmitterBase V

MMBTA92SOT-23 Plastic-Encapsulate Transistors MMBTA92 TRANSISTOR (PNP) SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR High voltage transistor MARKING:2D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continu

MMBTA92 TRANSISTOR (PNP)SOT-23 Plastic-Encapsulate Transistors SOT-23 FEATURES High voltage transistor 1BASE 2EMITTER 3COLLECTOR MARKING:2DMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -200 m

MMBTA92 SOT-23 PNP Transistors32 1.Base Features2.Emitter1 3.Collector High voltage transistor Low collector-emitter saturation voltage Simplified outline(SOT-23) Complementary to MMBTA42 (NPN) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -300 Collector - Emitter Voltage VCEO -300 V Emitter

MMBTA92TRANSI STOR (PNP)MARKING: Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: High Breakdown VoltageMAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage VCBO -300 VCollector-Emitter Voltage VCEO -300 VEmitter-Base Voltage VEBO -5 VCollector Current -Continuous IC -200 mACollector Current -Puised ICM -

RoHS RoHSCOMPLIANT COMPLIANTMMBTA92 PNP Silicon High Voltage Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Surface mount package ideally Suited for Automatic Insertion PNP Mechanical Data ackage: SOT-23 P Terminals: Tin plated leads, s

SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBTA92 TRANSISTOR (PNP) 1. BASE FEATURES 2. EMITTER 3. COLLECTOR High voltage transistor MARKING:2D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -200

FHTA92-MEPNP Transistor DESCRIPTIONSSOT-23 PNP PNP transistor in a SOT-23 Plastic Package. APPLICATIONSHigh voltage switchingblow up . PIN ASSIGNMENT1 BASE2 EMITTER3 COLLECTOR Equivalent Circuit Name rule Name Additional cod

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDMMBTA92/MMBTA93 MAXIMUM RATINGS Characteristic Symbol Unit(MMBTA92) (MMBTA93) Collector-Emitter VoltageVCEO -300 -200 Vdc-Collector-Base VoltageVCBO -300 -200 Vdc-Emitter-Base VoltageVEBO -6.0 -6.0 Vdc

MMBTA92PNP GENERAL PURPOSE SWITCHING TRANSISTORVOLTAGE -300Volts POWER 300mWattsFEATURESPNP epitaxial silicon, planar design. Collector-emitter voltage VCE=-300V.Collector current IC=-0.3A.ansition frequency fT>200MHz @ IC=-Tr20mAdc, VCE=-50Vdc, f=100MHz.In compliance with ER RoHS 2002/95/EC directives.MECHANICAL DATACase: SOT-23, Plastic3Terminal

MMBTA92BIPOLAR TRANSISTOR (PNP)FEATURES Complementary to MMBTA42 High breakdown voltage Low Collector-emitter saturation voltage Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)A