SC307 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SC307
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.1 A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 300 MHz
Ganancia de corriente contínua (hFE): 56
Encapsulados: SOT23
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SC307 datasheet
0.4. Size:213K toshiba
2sc3075.pdf 
2SC3075 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3075 Switching Regulator and High Voltage Switching Unit mm Applications DC-DC Converter Applications DC-AC Converter Applications Excellent switching times tr = 1.0 s (max) t = 1.5 s (max), (I = 0.5 A) f C High collector breakdown voltage V = 400 V CEO Maximum Ratings (Ta = 25
0.5. Size:232K toshiba
2sc3073.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
0.6. Size:183K toshiba
2sc3074.pdf
2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3074 High Current Switching Applications Unit mm Low collector saturation voltage VCE (sat) = 0.4 V (max) (IC = 3 A) High speed switching time t = 1.0 s (typ) stg Complementary to 2SA1244 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Col
0.7. Size:190K toshiba
2sc3076.pdf
2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3076 Power Amplifier Applications Unit mm Power Switching Applications Low collector saturation voltage VCE (sat) = 0.5 V (max) (I = 1 A) C Excellent switching time t = 1.0 s (typ.) stg Complementary to 2SA1241 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-
0.8. Size:184K toshiba
2sc3072.pdf
2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3072 Strobe Flash Applications Unit mm Medium Power Amplifier Applications High DC current gain h = 140 to 450 (V = 2 V, I = 0.5 A) FE CE C h = 70 (min) (V = 2 V, I = 4 A) FE CE C Low collector saturation voltage V = 1.0 V (max) (I = 4 A, I = 0.1 A) CE (sat) C B High power dissipa
0.9. Size:91K sanyo
2sc3070.pdf
Ordering number EN923G NPN Epitaxial Planar Silicon Transistor 2SC3070 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency, general-purpose amplifier., various unit mm drivers, muting circuit. 2006A [2SC3070] Features High DC current gain (hFE=800 to 3200). Large current capacity (IC=1.2A). Low collector-to-e
0.10. Size:84K sanyo
2sc3071.pdf
Ordering number EN946G NPN Epitaxial Planar Silicon Transistor 2SC3071 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency, general-purpose amplifier., various unit mm drivers, muting circuit. 2006B [2SC3071] Features High DC current gain (hFE=500 to 2000). High breakdown voltage (VCEO 100V). Low collector
0.11. Size:24K fairchild semi
ksc3076.pdf
KSC3076 Power Amplifier Applications Low Collector-Emitter Saturation Voltage Complement to KSA 1241 1 I-PACK 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector
0.12. Size:42K fairchild semi
ksc3074.pdf
KSC3074 High Power Switching Complement to KSA1244 1 I-PACK 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current 5 A IB Base Current 1 A PC Collector Dissipa
0.13. Size:40K fairchild semi
ksc3073.pdf
KSC3073 Power Amplifier Application Complement to KSA1243 1 I-PAK 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current 3 A IB Base Current 0.6 A PC Collector
0.14. Size:14K samsung
ksc3076.pdf
KSC3076 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS I-PACK Low Collector Emitter Saturation Voltage Complement to KSA 1241 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 50 V 1. Base 2. Collector 3. Emitter Emitter Base Voltage VEBO 5 V Base Current IB 1 A Collector Current IC
0.15. Size:41K panasonic
2sc3077 e.pdf
Transistor 2SC3077 Silicon NPN planer type For UHF amplification/mixing Unit mm +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 High power gain PG. High transition frequency fT. 1 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25 C) 0.1 to
0.17. Size:1450K kexin
2sc3074.pdf
DIP Type Transistors NPN Transistors 2SC3074 TO-251 Features Low collector saturation voltage 1 2 3 High speed switching time tstg = 1.0 s (typ.) Complementary to 2SA1244 1 3 2 1 Base 2 Collector 3 Emitter Unit mm Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V
0.18. Size:201K inchange semiconductor
2sc3074.pdf
isc Silicon NPN Power Transistor 2SC3074 DESCRIPTION With TO-252(DPAK) packaging Excellent linearity of h FE Low collector-to-emitter saturation voltage Fast switching speed Complementary to 2SA1244 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers, high-speed inverters , converters and Other general high curr
0.19. Size:191K inchange semiconductor
2sc3074 v2.pdf
isc Silicon NPN Power Transistor 2SC3074 DESCRIPTION With TO-251(IPAK) packaging Excellent linearity of h FE Low collector-to-emitter saturation voltage Fast switching speed Complementary to 2SA1244 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers, high-speed inverters , converters and Other general high curr
0.20. Size:250K inchange semiconductor
2sc3076.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3076 DESCRIPTION Collector-Emitter Saturation Voltage- V = 0.5V (Max.)@ I = 1A CE(sat) C Complementary to 2SA1241 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier application Power switching application ABSOLUTE MAXIMUM RATINGS(T =25
Otros transistores... SC118, SC119, SC206, SC207, SC236, SC237, SC238, SC239, A733, SC308, SC309, SCE237, SCE238, SCE239, SCE307, SCE308, SCE309
