SD401 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SD4017RF & MICROWAVE TRANSISTORS806-960 MHz CELLULAR BASE STATIONS.GOLD METALLIZATION.DIFFUSED EMITTER BALLASTING.INTERNAL INPUT MATCHING.DESIGNED FOR LINEAR OPERATION.HIGH SATURATED POWER CAPABILITY.COMMON EMITTER CONFIGURATION.230 6LFL (M142).P 30 W MIN. WITH 7.5 dB GAIN=OUTepoxy sealed. 55% TYPICALC =.TYPICAL LOAD MISMATCH CAPABILITY: ORDER CODE BRANDING

SD4013RF & MICROWAVE TRANSISTORSUHF COMMUNICATIONS APPLICATIONSPRELIMINARY DATA.REFRACTORY/GOLD METALLIZATION.INTERNAL INPUT MATCHING.METAL/CERAMIC PACKAGE.EMITTER BALLASTED.20:1 VSWR CAPABILITY.P 25 W MIN. WITH 9 dB GAIN=OUT.500 6LFL (M111)epoxy sealedORDER CODE BRANDINGSD4013 SUMIL25PIN CONNECTIONDESCRIPTIONThe SD4013 is a gold metallized epitaxial silicon

SD4010RF & MICROWAVE TRANSISTORSUHF TV LINEAR APPLICATIONS.470-860 MHz.26.5 VOLTS.GOLD METALLIZATION.P 20.0W MIN. WITH 9.5 dB GAIN=OUT.INTERNAL INPUT MATCHING.DIFFUSED EMITTER BALLASTRESISTORS .400 x .425 4LFL (M119)hermetically sealedORDER CODE BRANDINGSD4010 SUTV200PIN CONNECTIONDESCRIPTIONThe SD4010 is a gold metallized epitaxial siliconNPN planar transist

SD4011RF & MICROWAVE TRANSISTORSUHF TV/LINEAR APPLICATIONS.GOLD METALLIZATION.INTERNAL INPUT MATCHING.COMMON EMITTER.OVERLAY GEOMETRY.CLASS A OPERATION.METAL/CERAMIC PACKAGE.P 4 WMIN. WITH 8 dB GAINOUT = .280 4L STUD (M122)epoxy sealedORDER CODE BRANDINGSD4011 SUTV040PIN CONNECTIONDESCRIPTIONThe SD4011 is a gold metallized NPN silicon bipolardevice optimized fo

KSD401TV Vertical Deflection Output Collector-Base Voltage : VCBO=200V Collector Current : IC=2A Collector Dissipation : PC=25W(TC=25C) Complement to KSB546TO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 200 V VCEO Collector-

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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package CSD401CSD401 NPN PLASTIC POWER TRANSISTORComplementary CSB546TV Vertical Deflection Output ApplicationsPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4. COLLECTOR123CDIM MIN. MAX.B EFA 14.42 16.51B 9.63 10.67C 3.56 4.83D0.90E 1.15 1.401

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SD401A DESCRIPTION With TO-220C package Complement to type 2SB546A Collector current IC=2A Collector-collector voltage:VCEO=150V(Min) APPLICATIONS For use in general purpose power amplifier, vertical output application PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD401 DESCRIPTION With TO-220C package Complement to type 2SB546 Collector current IC=2A Collector-base voltage VCBO=200V APPLICATIONS For use in general purpose power amplifier,vertical output application PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter

HG RF POWER TRANSISTORSD4013SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORSD4013RF & MICROWAVE TRANSISTORSUHF COMMUNICATIONS APPLICATIONSPRELIMINARY DATA.REFRACTORY/GOLD METALLIZATION.INTERNAL INPUT MATCHING.METAL/CERAMIC PACKAGE.EMITTER BALLASTED.20:1 VSWR CAPABILITY.POUT 25 W MIN. WITH 9 dB GAIN=.500 6LFL (M111)epoxy sealedORDER CODE BRANDING

HG RF POWER TRANSISTORSD4011SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORSD4011RF & MICROWAVE TRANSISTORSUHF TV/LINEAR APPLICATIONS.GOLD METALLIZATION.INTERNAL INPUT MATCHING.COMMON EMITTER.OVERLAY GEOMETRY.CLASS A OPERATION.METAL/CERAMIC PACKAGE.P 4 W MIN. WITH 8 dB GAINOUT = .280 4L STUD (M122)epoxy sealedORDER CODE BRANDINGSD4011 SUTV040PI

WSD40120DN56 N-Ch MOSFETGeneral Description Product SummeryThe WSD40120DN is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell 40V 1.85m 120Adensity , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . Applications The WSD40120DN meet the RoHS and Green Product requirement , 100% EAS g

WSD40120DN56G N-Ch MOSFETGeneral Description Product SummeryThe WSD40120DN use advanced SGT BVDSS RDSON ID MOSFET technology to provide low RDS(ON), 40V 1.8m 120Alow gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better Applications ruggedness and suitable to use in Consumer electronic power supply S

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD401A DESCRIPTION With TO-220C package Complement to type 2SB546A Collector current IC=2A Collector-collector voltage:VCEO=150V(Min) APPLICATIONS For use in general purpose power amplifier, vertical output application PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mount

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD401 DESCRIPTION With TO-220C package Complement to type 2SB546 Collector current IC=2A Collector-base voltage VCBO=200V APPLICATIONS For use in general purpose power amplifier,vertical output application PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD401 DESCRIPTION Collector-Base Breakdown Voltage- : V(BR)CBO= 200V(Min) Collector Current- IC= 2A Collector Power Dissipation- : PC= 25W@ TC= 25 Complement to Type KSB546 APPLICATIONS Designed for TV Vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25)