SD459 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SD459

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 90 W

Tensión colector-emisor (Vce): 120 V

Corriente del colector DC máxima (Ic): 10 A

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 25

Encapsulados: TO220

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SD459 datasheet

 0.1. Size:130K  st
 sd4590.pdf pdf_icon

SD459

SD4590 RF & MICROWAVE TRANSISTORS 800-960 MHz CELLULAR BASE STATION GOLD METALLIZATION . DIFFUSED EMITTER BALLASTING . INTERNAL INPUT/OUTPUT MATCHING . COMMON EMITTER CONFIGURATION . DESIGNED FOR LINEAR OPERATION . HIGH SATURATED POWER CAPABILITY . 26 VOLT, 900 MHz PERFORMANCE . .400 x .860 4LFL (M208) P 150 W MIN. OUT = epoxy sealed GAIN = 8.5 dB MIN. IMD -28dB MAX. @ POU

 0.2. Size:116K  njs
 sd4590.pdf pdf_icon

SD459

 0.3. Size:190K  inchange semiconductor
 2sd459.pdf pdf_icon

SD459

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD459 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High DC Current Gain h = 1500(Min) @I = 5A FE C Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power amplifier and switching

Otros transistores... SD451, SD452, SD453, SD454, SD455, SD456, SD457, SD458, BC547B, SD460, SD600, SD601, SD602, SD802, SD812, SF016, SF018