SD600 Todos los transistores

 ..1. Size:123K  gdr
 sd168 sd335 sd336 sd337 sd338 sd339 sd340 sd345 sd346 sd347 sd348 sd349 sd350 sd600 sd601 sd602 sd802 sd812.pdf

 ..2. Size:336K  gdr
 sd168 sd600 sd601 sd602 sd802 sd812.pdf

 0.1. Size:32K  st
 sd60030.pdf

SD60030 RF POWER TRANSISTORS The LdmoST FAMILY TARGET DATA Designed for GSM / EDGE / IS-97 applications EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 30 W with 10 dB gain @ 2000 MHz M243 epoxy sealed ORDER CODE BRANDING DESCRIPTION SD60030 SD60030 The SD60030 is a common source N-Channel en- hancement-mode lateral Field-Effect RF power transistor de

 0.2. Size:115K  sanyo
 2sd600k.pdf

Ordering number 346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions High breakdown voltage VCEO 100/120V, High unit mm current 1A. 2009B Low saturation voltage, excellent hFE linearity. [2SB631, 631K/2SD600, 600K] 1 Emitter 2 Collector 3 Base ( ) 2SB631, 631K

 0.3. Size:126K  sanyo
 2sd600.pdf

Ordering number 346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions High breakdown voltage VCEO 100/120V, High unit mm current 1A. 2009B Low saturation voltage, excellent hFE linearity. [2SB631, 631K/2SD600, 600K] 1 Emitter 2 Collector 3 Base ( ) 2SB631, 631K

 0.4. Size:405K  blue-rocket-elect
 2sd600k.pdf

2SD600K(BR3DA600KQF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features V , 2SB631K(BR3CA631KQF) CEO High VCEO ,high current, low VCE(sat) and good linearity of hFE; complementary pair with 2SB63

 0.5. Size:264K  huashuo
 hsd6004.pdf

HSD6004 N-Ch 60V Fast Switching MOSFETs Description Product Summary V 60 V DS The HSD6004 is the high cell density trenched N-ch MOSFETs, which provide excellent R 30 m DS(ON),max RDSON and gate charge for most of the synchronous buck converter applications. I 23 A D The HSD6004 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli

 0.6. Size:195K  inchange semiconductor
 2sd600 2sd600k.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD600 2SD600K DESCRIPTION With TO-126 package Complement to type 2SB631/631K High breakdown voltage VCEO100/120V High current 1A Low saturation voltage APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mount

 0.7. Size:214K  inchange semiconductor
 2sd600k.pdf

isc Silicon NPN Power Transistor 2SD600K DESCRIPTION High Collector Current-I = 1.0A C High Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Complement to Type 2SB631K Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSO

 0.8. Size:214K  inchange semiconductor
 2sd600.pdf

isc Silicon NPN Power Transistor 2SD600 DESCRIPTION High Collector Current-I = 1.0A C High Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Complement to Type 2SB631 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLU