SD601 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MSD601RT1/DNPN General Purpose Amplifier*MSD601-RT1Transistors Surface MountCOLLECTORMSD601-ST13*Motorola Preferred Device2 13BASE EMITTERMAXIMUM RATINGS (TA = 25C) 21Rating Symbol Value UnitCollectorBase Voltage V(BR)CBO 60 VdcCASE 318D03, STYLE 1CollectorEmitter Voltage V(BR)CEO 50

MSD601-RT1, MSD601-ST1Preferred Device NPN General PurposeAmplifier TransistorsSurface MountFeatureshttp://onsemi.com Pb-Free Packages are AvailableCOLLECTOR3MAXIMUM RATINGS (TA = 25C)Rating Symbol Value UnitCollector - Base Voltage V(BR)CBO 60 Vdc1 2BASE EMITTERCollector - Emitter Voltage V(BR)CEO 50 VdcEmitter - Base Voltage V(BR)EBO 7.0 VdcMARKINGColl

MSD601-RT1, MSD601-ST1Preferred Device NPN General PurposeAmplifier TransistorsSurface MountFeatureshttp://onsemi.com Pb-Free Packages are AvailableCOLLECTOR3MAXIMUM RATINGS (TA = 25C)Rating Symbol Value UnitCollector - Base Voltage V(BR)CBO 60 Vdc1 2BASE EMITTERCollector - Emitter Voltage V(BR)CEO 50 VdcEmitter - Base Voltage V(BR)EBO 7.0 VdcMARKINGColl

MSD601-RT1, MSD601-ST1Preferred Device NPN General PurposeAmplifier TransistorsSurface MountFeatureshttp://onsemi.com Pb-Free Packages are AvailableCOLLECTOR3MAXIMUM RATINGS (TA = 25C)Rating Symbol Value UnitCollector - Base Voltage V(BR)CBO 60 Vdc2 1BASE EMITTERCollector - Emitter Voltage V(BR)CEO 50 VdcEmitter - Base Voltage V(BR)EBO 7.0 VdcMARKINGColl

MSD601-RT1, MSD601-ST1Preferred Device NPN General PurposeAmplifier TransistorsSurface MountFeatureshttp://onsemi.com Pb-Free Packages are AvailableCOLLECTOR3MAXIMUM RATINGS (TA = 25C)Rating Symbol Value UnitCollector - Base Voltage V(BR)CBO 60 Vdc1 2BASE EMITTERCollector - Emitter Voltage V(BR)CEO 50 VdcEmitter - Base Voltage V(BR)EBO 7.0 VdcMARKINGColl

Transistor2SD601ASilicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB709A+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).1Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packin

Transistor2SD601ASilicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB709A+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).1Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packin

2SD601A 0.1A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE High forward current transfer ratio hFE AL Low collector to emitter saturation voltage VCE(sat) 33Top ViewC BCLASSIFICATION OF hFE 11 22K EProduct-Rank 2SD601A-Q 2SD601A-R 2SD601A-S Ran

MSD601NPN General Purpose Transistors31P b Lead(Pb)-Free2SOT-23MAXIMUM RATINGS(Ta=25C)Rating Symbol Value UnitCollector-Emitter VoltageVCEO50 VVCBOCollector-Base Voltage 60 VVEBOEmitter-Base Voltage 7.0 VICCollector Current - Continuous 100 mAIC(P)Collector Current - Peak 200 mATotal Device DissipationPD0.2 mWTA=25CTj CJunction Temperature

2SD601A(BR3DG601AM) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features 2SB709A(BR3CG709AM)Complementary pair with 2SB709A(BR3CG709AM). / Applications General power amplifier applications / Equiva

2SD601LT1 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE Package:SOT-23 * Collector Current: Ic= 100mA * Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW * High Hfe And Good Linearity ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating UnitCollector-Base Voltage Vcbo 50 V PIN: 1 2 3Collector-Emitter Voltage Vceo 45

SMD Type TransistorsNPN Transistors2SD601ASOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features3 High hFE Low VCE(sat) For general amplification1 2+0.10.95-0.1 0.1+0.05-0.01 Complimentary to 2SB709A+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO

HSD6016 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSD6016 is the high cell density trenched N- VDS 60 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 12 m gate charge for most of the synchronous buck converter applications. ID 47 A The HSD6016 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabilit