SD601 Todos los transistores

 ..1. Size:123K  gdr
 sd168 sd335 sd336 sd337 sd338 sd339 sd340 sd345 sd346 sd347 sd348 sd349 sd350 sd600 sd601 sd602 sd802 sd812.pdf

 ..2. Size:336K  gdr
 sd168 sd600 sd601 sd602 sd802 sd812.pdf

 0.1. Size:110K  motorola
 msd601-r.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MSD601 RT1/D NPN General Purpose Amplifier * MSD601-RT1 Transistors Surface Mount COLLECTOR MSD601-ST1 3 *Motorola Preferred Device 2 1 3 BASE EMITTER MAXIMUM RATINGS (TA = 25 C) 2 1 Rating Symbol Value Unit Collector Base Voltage V(BR)CBO 60 Vdc CASE 318D 03, STYLE 1 Collector Emitter Voltage V(BR)CEO 50

 0.2. Size:146K  onsemi
 msd601-rt1 msd601-st1.pdf

MSD601-RT1, MSD601-ST1 Preferred Device NPN General Purpose Amplifier Transistors Surface Mount Features http //onsemi.com Pb-Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS (TA = 25 C) Rating Symbol Value Unit Collector - Base Voltage V(BR)CBO 60 Vdc 1 2 BASE EMITTER Collector - Emitter Voltage V(BR)CEO 50 Vdc Emitter - Base Voltage V(BR)EBO 7.0 Vdc MARKING Coll

 0.3. Size:83K  onsemi
 msd601-r.pdf

MSD601-RT1, MSD601-ST1 Preferred Device NPN General Purpose Amplifier Transistors Surface Mount Features http //onsemi.com Pb-Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS (TA = 25 C) Rating Symbol Value Unit Collector - Base Voltage V(BR)CBO 60 Vdc 1 2 BASE EMITTER Collector - Emitter Voltage V(BR)CEO 50 Vdc Emitter - Base Voltage V(BR)EBO 7.0 Vdc MARKING Coll

 0.4. Size:42K  onsemi
 msd601-rt1-d.pdf

MSD601-RT1, MSD601-ST1 Preferred Device NPN General Purpose Amplifier Transistors Surface Mount Features http //onsemi.com Pb-Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS (TA = 25 C) Rating Symbol Value Unit Collector - Base Voltage V(BR)CBO 60 Vdc 2 1 BASE EMITTER Collector - Emitter Voltage V(BR)CEO 50 Vdc Emitter - Base Voltage V(BR)EBO 7.0 Vdc MARKING Coll

 0.5. Size:83K  onsemi
 msd601-rt1g.pdf

MSD601-RT1, MSD601-ST1 Preferred Device NPN General Purpose Amplifier Transistors Surface Mount Features http //onsemi.com Pb-Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS (TA = 25 C) Rating Symbol Value Unit Collector - Base Voltage V(BR)CBO 60 Vdc 1 2 BASE EMITTER Collector - Emitter Voltage V(BR)CEO 50 Vdc Emitter - Base Voltage V(BR)EBO 7.0 Vdc MARKING Coll

 0.6. Size:43K  panasonic
 2sd601a e.pdf

Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB709A +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packin

 0.7. Size:38K  panasonic
 2sd601.pdf

Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB709A +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packin

 0.8. Size:52K  secos
 2sd601a.pdf

2SD601A 0.1A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE High forward current transfer ratio hFE A L Low collector to emitter saturation voltage VCE(sat) 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 2 K E Product-Rank 2SD601A-Q 2SD601A-R 2SD601A-S Ran

 0.9. Size:425K  wietron
 msd601.pdf

MSD601 NPN General Purpose Transistors 3 1 P b Lead(Pb)-Free 2 SOT-23 MAXIMUM RATINGS(Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage VCEO 50 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current - Continuous 100 mA IC(P) Collector Current - Peak 200 mA Total Device Dissipation PD 0.2 mW TA=25 C Tj C Junction Temperature

 0.10. Size:854K  blue-rocket-elect
 2sd601a.pdf

2SD601A(BR3DG601AM) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features 2SB709A(BR3CG709AM) Complementary pair with 2SB709A(BR3CG709AM). / Applications General power amplifier applications / Equiva

 0.11. Size:123K  china
 2sd601lt1.pdf

2SD601LT1 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE Package SOT-23 * Collector Current Ic= 100mA * Collector-Emitter Voltage Vce= 45V * High Total Power Dissipation Pc=225mW * High Hfe And Good Linearity ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo 50 V PIN 1 2 3 Collector-Emitter Voltage Vceo 45

 0.12. Size:353K  kexin
 2sd601a.pdf

SMD Type Transistors NPN Transistors 2SD601A SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 Features 3 High hFE Low VCE(sat) For general amplification 1 2 +0.1 0.95-0.1 0.1+0.05 -0.01 Complimentary to 2SB709A +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO

 0.13. Size:495K  huashuo
 hsd6016.pdf

HSD6016 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSD6016 is the high cell density trenched N- VDS 60 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 12 m gate charge for most of the synchronous buck converter applications. ID 47 A The HSD6016 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabilit