SF150 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SF150

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.6 W

Tensión colector-emisor (Vce): 160 V

Corriente del colector DC máxima (Ic): 0.05 A

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 10

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SF150 datasheet

 0.1. Size:44K  intersil
fsf150.pdf pdf_icon

SF150

FSF150D, FSF150R 25A, 100V, 0.070 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description 25A, 100V, rDS(ON) = 0.070 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD

 0.2. Size:437K  silikron
ssf1504d.pdf pdf_icon

SF150

SSF1504D Main Product Characteristics VDSS 170V(typ) RDS(on) 0.3 (typ) ID 6A Marking and pin DPAK Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 0.3. Size:440K  silikron
ssf1502d.pdf pdf_icon

SF150

SSF1502D Main Product Characteristics VDSS 170V(typ) RDS(on) 0.15 (typ) ID 8A Marking and pin DPAK Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

Otros transistores... SF126, SF127, SF128, SF129, SF131, SF132, SF136, SF137, 2N5551, SF215, SF216, SF225, SF235, SF240, SF245, SF357, SF358