2SB1322A Todos los transistores

Transistor 2SB1322A Silicon PNP epitaxial planer type For low-frequency power amplification Unit mm Complementary to 2SD1994A 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Allowing supply with the radial taping. 0.65 max. Absolute Maximum Ratings (Ta=25 C) +0.1 0.45 0.05 Parameter Symbol Ratings Unit 2.5 0.5 2.5 0.5 Collector to base voltage VCBO 60

Transistors 2SB1322A Silicon PNP epitaxial planer type Unit mm 2.5 0.1 1.05 For low-frequency power amplification 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Complementary to 2SD1994A Features 0.65 max. Allowing supply with the radial taping +0.1 0.45-0.05 Absolute Maximum Ratings Ta = 25 C 2.5 0.5 2.5 0.5 1 2 3 Parameter Symbol Rating Unit Collector to base voltage VCBO -

2SB1322A -1A , -60V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES G H Allow Supply with The Radial Taping Emitter Collector Base J A D CLASSIFICATION OF hFE (1) Millimeter REF. Min. Max. Product-Rank 2SB1322A-Q 2SB1322A-R 2SB1322A-S B A 4.40 4.70

This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SB1322 Silicon PNP epitaxial planar type For low frequency power amplification Complementary to 2SD1994 Package Features Code Allowing supply with the radial taping MT-2-A1 Absolute Maximum Ratings Ta = 25 C Pin Name 1. Emitter Parameter Symbol Rating Unit 2. Collector

Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Mainten

2SB1386 / 2SB1412 / 2SB1326 Transistors Low frequency transistor (-20V, -5A) 2SB1386 / 2SB1412 / 2SB1326 External dimensions (Unit mm) Features 1) Low VCE(sat). 2SB1386 2SB1412 VCE(sat) = -0.35V (Typ.) 2.3+0.2 6.5 0.2 -0.1 4.5+0.2 C0.5 -0.1 5.1+0.2 1.5+0.2 -0.1 0.5 0.1 (IC/IB = -4A / -0.1A) 1.6 0.1 -0.1 2) Excellent DC current gain characteristics. 3) Compleme

Transistor 2SB1320A Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SD1991A 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High foward current transfer ratio hFE. Allowing supply with the radial taping. 0.65 max. +0.1 0.45 0.05 Absolute Maximum Ratings (Ta=25 C) 2.5 0.5 2.5 0.5 Parameter Symbol Ratings Unit 1 2 3 C

Transistors 2SB1320A Silicon PNP epitaxial planer type Unit mm For general amplification 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Complementary to 2SD1991A Features 0.65 max. High forward current transfer ratio hFE Allowing supply with the radial taping +0.1 0.45-0.05 2.5 0.5 2.5 0.5 Absolute Maximum Ratings Ta = 25 C 1 2 3 Parameter Symbol Rating Unit

Transistor 2SB1321A Silicon PNP epitaxial planer type For low-frequency output amplification and driver amplification Unit mm Complementary to 2SD1992A 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Allowing supply with the radial taping. Large collector power dissipation PC. (600mW) 0.65 max. +0.1 0.45 0.05 Absolute Maximum Ratings (Ta=25 C) 2.5 0.5 2.5

Transistors 2SB1321A Silicon PNP epitaxial planer type Unit mm 6.9 0.1 1.05 2.5 0.1 For general amplification 0.05 (1.45) 0.7 4.0 0.8 Complementary to 2SD1992A Features 0.65 max. Large collector power dissipation PC (600 mW) Allowing supply with the radial taping +0.1 0.45-0.05 2.5 0.5 2.5 0.5 Absolute Maximum Ratings Ta = 25 C 1 2 3 Parameter Symbol Rating

SMD Type Transistors PNP Transistors 2SB1323 1.70 0.1 Features Contains diode between collector and emitter. Low saturation voltage. 0.42 0.1 0.46 0.1 Large current capacity. Complementary to 2SD1997 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Vo

SMD Type Transistors PNP Transistors 2SB1325 1.70 0.1 Features Contains diode between collector and emitter. Low saturation voltage. Collector Large current capacity. 0.42 0.1 0.46 0.1 Complementary to 2SD1999 Base 1.Base 2.Collector RBE 3.Emitter Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage V

SMD Type Transistors PNP Transistors 2SB1324 1.70 0.1 Features Contains diode between collector and emitter. Low saturation voltage. Collector Large current capacity. 0.42 0.1 0.46 0.1 Complementary to 2SD1998 Base 1.Base 2.Collector RBE 3.Emitter Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage V