2SC4226 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

NEC's NPN SILICON HIGH NE856FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT:fT = 7 GHz LOW NOISE FIGURE:1.1 dB at 1 GHz HIGH COLLECTOR CURRENT: 100 mA HIGH RELIABILITY METALLIZATION35 (MICRO-X)00 (CHIP) LOW COSTDESCRIPTIONNEC's NE856 series of NPN epitaxial silicon transistors isdesigned for low cost amplifier and oscillator application

DATA SHEETNPN SILICON RF TRANSISTOR2SC4226NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold package. FEATURES

2SC4226 0.1A , 20V NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURE SOT-323 Low noise A High gain L3 Power dissipation.(PC=150mW) 3Top View C B11 22K EAPPLICATIONS High frequency low noise amplifier. DH JF GCLASSIFICATION OF hFE Pro

SMD Type TransistorsNPN Transistors2SC4226 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=12V1.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage VEBO 3 Collector Current - Continuous IC 100 m

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4226DESCRIPTIONLow Collector Curren -I = 0.1ACLow Collector PowerPc=0.1WWith SOT-323 PackageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for broadband low noise amplifier ;wideband low noise amplifieABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

LESHAN RADIO COMPANY, LTD.L2SC4226T1GS-L2SC4226T1G312SC-70/SOT-323DESCRIPTIONThe L2SC4226T1G is a low supply voltage transistor designed for VHF, UHF lownoise amplifier.It is suitable for a high density surface mount assembly since the transistorhas been applied small mini mold package.We declare that the material of product compliance with RoHS requirements.S- Prefix

2SC4226NPN Silicon Epitaxial Planar TransistorFEATURES Low noise. High gain. Power dissipation.(PC=150mW) APPLICATIONS High frequency low noise amplifier. SOT-323 ORDERING INFORMATION MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value UnitsCollector-Base Voltage VCBO 20 VCollector-Emitter Voltage VCEO 12 VEmitter-Base Voltage VEBO 3

2SC4226NPN Silicon Epitaxial Planar TransistorFEATURES Low noise. High gain. Power dissipation.(PC=150mW) APPLICATIONS High frequency low noise amplifier. SOT-323 ORDERING INFORMATION MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value UnitsCollector-Base Voltage VCBO 20 VCollector-Emitter Voltage VCEO 12 VEmitter-Base Voltage VEBO

2SC4226NPN SILICON RF TRANSISTOR External bipolar process, with high power gain process, with high power gain Low noise characteristics. The adoption ofnoise characteristics. The adoption of submit- niature SOT- 323 package, Especially suitable for Especially suitable forhigh density surface patch installation, mainly forinstallation, mainly for the VHF, UHF low noise ampli