2SC4226 Todos los transistores

 ..1. Size:257K  nec
 ne856 2sc5011 2sc5006 2sc4226 2sc3355 2sc3603 2sc3356 2sc3357 2sc3603 2sc4093.pdf

NEC's NPN SILICON HIGH NE856 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 7 GHz LOW NOISE FIGURE 1.1 dB at 1 GHz HIGH COLLECTOR CURRENT 100 mA HIGH RELIABILITY METALLIZATION 35 (MICRO-X) 00 (CHIP) LOW COST DESCRIPTION NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator application

 ..2. Size:105K  nec
 2sc4226.pdf

DATA SHEET NPN SILICON RF TRANSISTOR 2SC4226 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold package. FEATURES

 ..3. Size:252K  secos
 2sc4226.pdf

2SC4226 0.1A , 20V NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURE SOT-323 Low noise A High gain L 3 Power dissipation.(PC=150mW) 3 Top View C B 1 1 2 2 K E APPLICATIONS High frequency low noise amplifier. D H J F G CLASSIFICATION OF hFE Pro

 ..4. Size:933K  kexin
 2sc4226.pdf

SMD Type Transistors NPN Transistors 2SC4226 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=12V 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage VEBO 3 Collector Current - Continuous IC 100 m

 ..5. Size:861K  inchange semiconductor
 2sc4226.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4226 DESCRIPTION Low Collector Curren -I = 0.1A C Low Collector Power Pc=0.1W With SOT-323 Package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for broadband low noise amplifier ; wideband low noise amplifie ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA

 0.1. Size:191K  lrc
 l2sc4226t1g.pdf

LESHAN RADIO COMPANY, LTD. L2SC4226T1G S-L2SC4226T1G 3 1 2 SC-70/SOT-323 DESCRIPTION The L2SC4226T1G is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied small mini mold package. We declare that the material of product compliance with RoHS requirements. S- Prefix

 0.2. Size:373K  slkor
 2sc4226-r24 2sc4226-r25 2sc4226-r26.pdf

2SC4226 NPN Silicon Epitaxial Planar Transistor FEATURES Low noise. High gain. Power dissipation.(PC=150mW) APPLICATIONS High frequency low noise amplifier. SOT-323 ORDERING INFORMATION MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value Units Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 12 V Emitter-Base Voltage VEBO 3

 0.3. Size:495K  cn evvo
 2sc4226-r23 2sc4226-r24 2sc4226-r25.pdf

2SC4226 NPN Silicon Epitaxial Planar Transistor FEATURES Low noise. High gain. Power dissipation.(PC=150mW) APPLICATIONS High frequency low noise amplifier. SOT-323 ORDERING INFORMATION MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value Units Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 12 V Emitter-Base Voltage VEBO

 0.4. Size:531K  cn shikues
 2sc4226a 2sc4226b 2sc4226c 2sc4226d 2sc4226e.pdf

2SC4226 NPN SILICON RF TRANSISTOR External bipolar process, with high power gain process, with high power gain Low noise characteristics. The adoption of noise characteristics. The adoption of submit- niature SOT- 323 package, Especially suitable for Especially suitable for high density surface patch installation, mainly for installation, mainly for the VHF, UHF low noise ampli