MMBT3904FW Todos los transistores

 

MMBT3904FW Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMBT3904FW
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 300 MHz
   Capacitancia de salida (Cc): 4 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT-523
 

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MMBT3904FW datasheet

 ..1. Size:179K  secos
mmbt3904fw.pdf pdf_icon

MMBT3904FW

MMBT3904FW NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product FEATURES SOT-523 A Epitaxial Planar Die Construction Dim Min Max L Complementary PNP Type Available A 1.500 1.700 (MMBT3906FW) B 0.750 0.850 Ideal for Medium Power Amplification and S Top View B C 0.700 0.900 Switching D 0.250 0.350 COLLECTOR V G G 0.900 1.100 3 3 H 0.0

 5.1. Size:135K  diodes
mmbt3904fa.pdf pdf_icon

MMBT3904FW

MMBT3904FA 40V NPN SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data BVCEO > 40V Case X2-DFN0806-3 IC = 200mA high Collector Current Case Material Molded Plastic, Green Molding Compound. PD = 435mW Power Dissipation UL Flammability Classification Rating 94V-0 0.48mm2 package footprint, 16 times smaller than SOT23 Moisture Sensitivity Le

 5.2. Size:572K  diodes
mmbt3904fz.pdf pdf_icon

MMBT3904FW

MMBT3904FZ 40V NPN SMALL SIGNAL TRANSISTOR IN DFN0606 Features Mechanical Data BVCEO > 40V Case X2-DFN0606-3 IC = 200mA High Collector Current Case Material Molded Plastic, Green Molding Compound. PD = 925mW Power Dissipation UL Flammability Classification Rating 94V-0 0.36mm2 Package Footprint, 40% Smaller than DFN1006 Moisture Sensitivity Level

 5.3. Size:555K  panjit
mmbt3904fn3.pdf pdf_icon

MMBT3904FW

MMBT3904FN3 NPN GENERAL PURPOSE SWITCHING TRANSISTOR Unit inch(mm) DFN 3L POWER VOLTAGE 40 Volt 250 mWatt 0.042(1.05) FEATURES 0.037(0.95) NPN epitaxial silicon, planar design Collector-emitter voltage VCE = 40V Collector current IC = 200mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free) M

Otros transistores... C945T , D882S , D965 , EMT1 , M28ST , M8050T , M8550T , MMBT2907FW , 2SA1943 , MMBT3904Z , MMBT3906FW , MMBT3906Z , MMBT4401W , MMBT491 , MMBT493 , MMBT5401W , MMBT5551W .

History: C1815T

 

 

 


 
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