MMBT4401W . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBT4401W
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250 MHz
Capacitancia de salida (Cc): 6.5 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SOT-323
Búsqueda de reemplazo de MMBT4401W
MMBT4401W Datasheet (PDF)
mmbt4401w.pdf

MMBT4401WNPN SiliconElektronische BauelementeSwitching TransistorRoHS Compliant ProductASOT-323LCOLLECTOR Dim Min Max3A 1.800 2.200STop ViewBB 1.150 1.35031C 0.800 1.000BASEV GD 0.300 0.4001G 1.200 1.40022CH 0.000 0.100EMITTERH J 0.100 0.250JDKK 0.350 0.500L 0.590 0.720S 2.000 2.400MAXIMUM RATINGSV 0.280 0.420Rating Symbo
mmbt4401wt1g.pdf

MMBT4401WT1GSwitching TransistorNPN SiliconFeatures Moisture Sensitivity Level: 1http://onsemi.com ESD Rating: Human Body Model; 4 kV,Machine Model; 400 VCOLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS3Compliant1BASEMAXIMUM RATINGS 2EMITTERRating Symbol Value UnitCollector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO
mmbt4401wt1.pdf

MMBT4401WT1GSwitching TransistorNPN SiliconFeatures Moisture Sensitivity Level: 1http://onsemi.com ESD Rating: Human Body Model; 4 kV,Machine Model; 400 VCOLLECTOR These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS3Compliant1BASEMAXIMUM RATINGS 2EMITTERRating Symbol Value UnitCollector -- Emitter Voltage VCEO 40 VdcCollector -- Base Volta
mmbt4401wt1.pdf

FM120-M WILLASTHRUMMBT4401WT1General Purpose Transistors FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to We declare
Otros transistores... M28ST , M8050T , M8550T , MMBT2907FW , MMBT3904FW , MMBT3904Z , MMBT3906FW , MMBT3906Z , 2SD718 , MMBT491 , MMBT493 , MMBT5401W , MMBT5551W , MMBT591 , MMBT593 , MMBT619 , MMBTA42W .



Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
k3563 | d882p | 2sb1560 | 2n1304 | 2sa979 | 2sc4793 | d965 | mje15031