MMBT491 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MMBT491 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES Low equivalent on-resistance SOT-23Collector3MARKING: 491 Dim Min MaxA 2.800 3.0401BaseB 1.200 1.4002EmitterC 0.890 1.110D 0.370 0.500G 1.780 2.040AH 0.013 0.100LJ J 0.085 0.177 K3K 0.450

MMBT493 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 AFEATURES L33Medium Power Transistor Top View C B11 2Collector2K E3 MARKING D 493 1 H JF GBaseMillimeter MillimeterREF. REF. Min. Max. Min. Max. 2 A 2.80 3.00 G 0.10 REF.B 2.25 2.55

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT404ALT1/DChopper TransistorMMBT404ALT1PNP SiliconMotorola Preferred DeviceCOLLECTOR31BASE32EMITTER12MAXIMUM RATINGSCASE 31808, STYLE 6Rating Symbol Value UnitSOT23 (TO236AB)CollectorEmitter Voltage VCEO 35 VdcCollectorBase Voltage VCBO 40 VdcEmitterBase Voltage VEB

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT4401LT1/DSwitching TransistorMMBT4401LT1NPN SiliconMotorola Preferred DeviceCOLLECTOR31BASE32EMITTER1MAXIMUM RATINGS2Rating Symbol Value UnitCollectorEmitter Voltage VCEO 40 VdcCASE 31808, STYLE 6SOT23 (TO236AB)CollectorBase Voltage VCBO 60 VdcEmitterBase Voltage VEBO 6.

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT4403LT1/DSwitching TransistorMMBT4403LT1COLLECTORPNP Silicon3Motorola Preferred Device1BASE23EMITTERMAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage VCEO 40 VdcCASE 31808, STYLE 6CollectorBase Voltage VCBO 40 VdcSOT23 (TO236AB)EmitterBase Voltage V

2N4400 MMBT4400CEC TO-92BBE SOT-23Mark: 83NPN General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 500 mA. Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VVCBO Collector-Base Voltage 60 VVEBO Emitter-Base Voltage 6.

MMBT4354PNP General Purpose Amplifier This device is deisgned for use as general purpose amplifiers and 3switch requiring collector currents to 500mA. Sourced from process 67. TN4033A for characteristics.2SOT-231Mark: 791. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter

November 2006MMBT4403KtmPNP Epitaxial Silicon TransistorSwitching TransistorMarking32TK2SOT-2311. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -40 VVCEO Collector-Emitter Voltage -40 VVEBO Emitter-Base Voltage -5 VIC Collector Current -600 mAPC Collector Power Dis

November 2006MMBT4401KtmNPN Epitaxial Silicon TransistorSwitching TransistorMarking32XK2SOT-2311. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 40 VVEBO Emitter-Base Voltage 6 VIC Collector Current 600 mAPC Collector Dissipation 3

2N4400 MMBT4400CEC TO-92BBE SOT-23Mark: 83NPN General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 500 mA. Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VVCBO Collector-Base Voltage 60 VVEBO Emitter-Base Voltage 6.

2N4403 MMBT4403CEC TO-92BSOT-23BEMark: 2TPNP General Purpose AmplifierThis device is designed for use as a general purpose amplifierand switch requiring collector currents to 500 mA. Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VVCBO Collector-Base Voltage40VVEBO Emitter-Base Voltage 5.0

MMBT4356PNP General Purpose Amplifier3 This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500mA. Sourced from process 67. See TN4033A for characteristics.2SOT-231Mark: 821. Base 2. Emitter 3. Collector Absolute Maximum Ratings * TA=25C unless otherwise notedSymbol Parameter Value UnitsVCES Collector-E

PN4355 MMBT4355CEC TO-92BSOT-23BEMark: 81PNP General Purpose AmplifierThis device is designed for use as a general purpose amplifierand switch requiring collector currents to 500 mA. Sourcedfrom Process 67. See TN4033A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 60 VVCBO

2N4124 MMBT4124CETO-92CB BSOT-23EMark: ZCNPN General Purpose AmplifierThis device is designed as a general purpose amplifier and switch.The useful dynamic range extends to 100 mA as a switch and to100 MHz as an amplifier.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 25 VVCBO Collector-Base Vo

2N4126 MMBT4126CEC TO-92B BSOT-23EMark: ZFPNP General Purpose AmplifierThis device is designed for general purpose amplifier and switch-ing applications at collector currents to 10 A as a switch and to100 mA as an amplifier.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 25 VVCBO Collector-Base

2N4401 MMBT4401CEC TO-92BSOT-23BEMark: 2XNPN General Pupose AmplifierThis device is designed for use as a medium power amplifier andswitch requiring collector currents up to 500 mA.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VVCBO Collector-Base Voltage 60 VVEBO Emitter-Base Voltage 6.0

MMBT4403T PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT523 Complementary NPN Type Available (MMBT4401T) Case Material: Molded Plastic, Green Molding Compound UL Flammability Classification Rating 94V-0 Ultra-Small Surface Mount Package Moisture Sensitivity: Level 1 per J-S

MMBT4401 40V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Ideal for Medium Power Amplification and Switching Case material: molded Plastic Green Compound UL Flammability Rating 94V-0 Complementary PNP Type: MMBT4403 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Moisture Sensiti

MMBT4126 25V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Ideal for Medium Power Amplification and Switching Case Material: Molded plastic, Green Molding Compound; Complementary NPN Type: MMBT4124 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 &

MMBT4124 25V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 25V Case: SOT23 IC = 200mA High Collector Current Case Material: Molded Plastic, Green Molding Compound; Complementary PNP Type: MMBT4126 UL Flammability Classification Rating 94V-0 Ideal for Medium Power Amplification and Switching Moisture Sensitivity: Level 1 per J

MMBT4401T NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary PNP Type Available (MMBT4403T) CDim Min Max Typ Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 3 and 4) A 0.15 0.30 0.22TOP VIEW B CB 0.75 0.85 0.80B EMechanical Data C 1.45 1.75 1.60G Case: SOT-523 D 0.50

MMBT4403 40V PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Complementary NPN Type Available (MMBT4401) UL Flammability Rating 94V-0 Ideal for Medium Power Amplification and Switching Case material: molded Plastic Green Compound Totally Lead-Free & Fully RoHS compliant (Notes

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMMBT4401Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Surface Mount SOT-23 Package Capable of 350mWatts of Power DissipationNPN General Operating and Storage Junction Temperatures: -55 to 150 Purpose Amplifier IC=600mA Marking:2X/M4A Lead Fre

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMMBT4403Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Operating and Storage Junction Temperatures: -55 to 150 Capable of 350mWatts of Power DissipationPNP General Surface Mount SOT-23 Package Ic=-600mA Purpose Amplifier Lead Free Finish/RoHS Compli

MMBT4126LT1GGeneral Purpose TransistorPNP SiliconFeatureshttp://onsemi.com Moisture Sensitivity Level: 1 ESD Rating: - Human Body Model: > 4000 V- Machine Model: > 400 V COLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value Unit EMITTERCollector-Emitter Voltage VCEO -25 VdcCollector-Ba

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

MMBT4126LT1GGeneral Purpose TransistorPNP SiliconFeatures Moisture Sensitivity Level: 1 www.onsemi.com ESD Rating: - Human Body Model: > 4000 V- Machine Model: > 400 VCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value Unit EMITTERCollector-Emitter Voltage VCEO -25 VdcCollector-Base

MMBT4401M3T5GNPN Switching TransistorThe MMBT4401M3T5G device is a spin-off of our popularSOT-23 three-leaded device. It is designed for general purposeswitching applications and is housed in the SOT-723 surface mountpackage. This device is ideal for low-power surface mountapplications where board space is at a premium.http://onsemi.comFeatures Reduces Board SpaceCOLLECTO

MMBT4403M3T5GPNP Switching TransistorThe MMBT4403M3T5G device is a spin-off of our popularSOT-23 three-leaded device. It is designed for general purposeswitching applications and is housed in the SOT-723 surface mountpackage. This device is ideal for low-power surface mountapplications where board space is at a premium.http://onsemi.comFeatures Reduces Board SpaceCOLLECTO

MMBT4401LT1GSwitching TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.comhttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 60 Vdc2EMITTEREmitter-Base Voltage VEBO 6.0 VdcCollector Current - Continuous IC 6

MMBT4401L, SMMBT4401LSwitching TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.comhttp://onsemi.comCompliantCOLLECTOR AEC-Q101 Qualified and PPAP Capable3 S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements1BASEMAXIMUM RATINGS2Rating Symbol Value Uni

MMBT4403WT1GSwitching TransistorPNP SiliconFeatures Moisture Sensitivity Level: 1http://onsemi.com ESD Rating: Human Body Model; 4 kV,Machine Model; 400 VCOLLECTOR These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS3Compliant1BASEMAXIMUM RATINGS 2EMITTERRating Symbol Value UnitCollector -- Emitter Voltage VCEO --40 Vdc3Collector -- Base

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MMBT4403L, SMMBT4403LSwitching TransistorPNP SiliconFeatures S Prefix for Automotive and Other Applications Requiring Uniquehttp://onsemi.comhttp://onsemi.comSite and Control Change Requirements; AEC-Q101 Qualified andPPAP CapableCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value Unit

MMBT4401WT1GSwitching TransistorNPN SiliconFeatures Moisture Sensitivity Level: 1http://onsemi.com ESD Rating: Human Body Model; 4 kV,Machine Model; 400 VCOLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS3Compliant1BASEMAXIMUM RATINGS 2EMITTERRating Symbol Value UnitCollector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO

MMBT4403L, SMMBT4403LSwitching TransistorPNP SiliconFeatures S Prefix for Automotive and Other Applications Requiring Uniquewww.onsemi.comSite and Control Change Requirements; AEC-Q101 Qualified andPPAP CapableCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector-Em

MMBT489LT1GHigh Current Surface MountNPN Silicon SwitchingTransistor for LoadManagement inwww.onsemi.comPortable Applications30 VOLTS, 2.0 AMPERESFeaturesNPN TRANSISTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantCOLLECTOR3MAXIMUM RATINGS (TA = 25C)1Rating Symbol Max UnitBASECollector-Emitter Voltage VCEO 30 VdcCollector-Base

MMBT4403LT1GSwitching TransistorPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.comhttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO -40 VdcCollector-Base Voltage VCBO -40 Vdc2EMITTEREmitter-Base Voltage VEBO -5.0 VdcCollector Current - Continuous I

MMBT489LT1GHigh Current Surface MountNPN Silicon SwitchingTransistor for LoadManagement inhttp://onsemi.comPortable Applications30 VOLTS, 2.0 AMPERESFeaturesNPN TRANSISTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantCOLLECTOR3MAXIMUM RATINGS (TA = 25C)1Rating Symbol Max UnitBASECollector-Emitter Voltage VCEO 30 VdcCollector-Ba

MMBT4401L, SMMBT4401LSwitching TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.comhttp://onsemi.comCompliantCOLLECTOR AEC-Q101 Qualified and PPAP Capable3 S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements1BASEMAXIMUM RATINGS2Rating Symbol Value Uni

MMBT4124LT1GGeneral Purpose TransistorNPN SiliconFeatureshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit 1BASECollector-Emitter Voltage VCEO 25 VdcCollector-Base Voltage VCBO 30 Vdc2Emitter-Base Voltage VEBO 5.0 VdcEMITTERCollector Current - Continuous IC 200 mAdcTHER

MMBT4124LT1GGeneral Purpose TransistorNPN SiliconFeatureswww.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit 1BASECollector-Emitter Voltage VCEO 25 VdcCollector-Base Voltage VCBO 30 Vdc2Emitter-Base Voltage VEBO 5.0 VdcEMITTERCollector Current - Continuous IC 200 mAdcTHERMAL

MMBT4401WT1GSwitching TransistorNPN SiliconFeatures Moisture Sensitivity Level: 1http://onsemi.com ESD Rating: Human Body Model; 4 kV,Machine Model; 400 VCOLLECTOR These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS3Compliant1BASEMAXIMUM RATINGS 2EMITTERRating Symbol Value UnitCollector -- Emitter Voltage VCEO 40 VdcCollector -- Base Volta

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MMBT4403L, SMMBT4403LSwitching TransistorPNP SiliconFeatures S Prefix for Automotive and Other Applications Requiring Uniquehttp://onsemi.comhttp://onsemi.comSite and Control Change Requirements; AEC-Q101 Qualified andPPAP CapableCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value Unit

MMBT4403M3T5GPNP Switching TransistorThe MMBT4403M3T5G device is a spin-off of our popularSOT-23 three-leaded device. It is designed for general purposeswitching applications and is housed in the SOT-723 surface mountpackage. This device is ideal for low-power surface mountapplications where board space is at a premium.http://onsemi.comFeatures Reduces Board SpaceCOLLECTO

MMBT4403WT1GSwitching TransistorPNP SiliconFeatures Moisture Sensitivity Level: 1http://onsemi.com ESD Rating: Human Body Model; 4 kV,Machine Model; 400 VCOLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS3Compliant1BASEMAXIMUM RATINGS 2EMITTERRating Symbol Value UnitCollector-Emitter Voltage VCEO -40 Vdc3Collector-Base Voltage

UNISONIC TECHNOLOGIES CO., LTD MMBT4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER 31 DESCRIPTION 2The UTC MMBT4401 is designed for use as a medium power SOT-23amplifier and switch requiring collector currents up to 500mA. (JEDEC TO-236)312SOT-323 ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3MMBT4401G-AE3-R SOT-

UNISONIC TECHNOLOGIES CO., LTD MMBT4403 PNP SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER 31 DESCRIPTION 2The UTC MMBT4403 is designed for use as a general purpose SOT-23amplifier and switch requiring collector currents up to 500mA. 312SOT-323 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 3MMBT440

MMBT4401NPN Silicon TransistorDescriptions PIN Connection PIN Connection General purpose application Switching application Features Low Leakage current Low collector saturation voltage enabling low voltage operation Complementary pair with MMBT4403 SOT-23 Ordering Information Type NO. Marking Package Code 4P MMBT4401 SOT-23

MMBT4403WPNP SiliconElektronische BauelementeSwitching TransistorRoHS Compliant ProductA SOT-323LDim Min MaxCOLLECTORA 1.800 2.2003STop ViewBB 1.150 1.3503C 0.800 1.0001BASED 0.300 0.400V G1G 1.200 1.40022H 0.000 0.100CEMITTERJ 0.100 0.250HJDKK 0.350 0.500L 0.590 0.720S 2.000 2.400MAXIMUM RATINGSV 0.280 0.420Rating Symb

MMBT4401WNPN SiliconElektronische BauelementeSwitching TransistorRoHS Compliant ProductASOT-323LCOLLECTOR Dim Min Max3A 1.800 2.200STop ViewBB 1.150 1.35031C 0.800 1.000BASEV GD 0.300 0.4001G 1.200 1.40022CH 0.000 0.100EMITTERH J 0.100 0.250JDKK 0.350 0.500L 0.590 0.720S 2.000 2.400MAXIMUM RATINGSV 0.280 0.420Rating Symbo

MMBT4401NPN SiliconElektronische BauelementeSwitching TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeACOLLECTORSOT-23L3Dim Min Max33A 2.800 3.040STop View1 B11 2 B 1.200 1.400BASE2C 0.890 1.110V GD 0.370 0.5002EMITTERG 1.780 2.040CH 0.013 0.100J 0.085 0.177HJDKK 0.450 0.600L 0.890 1.020MAXIM

MMBT4403PNP SiliconElektronische BauelementeSwitching TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeSOT-23Dim Min MaxA 2.800 3.040COLLECTOR AL3 B 1.200 1.400C 0.890 1.11031D 0.370 0.500Top View SBBASE 1 2G 1.780 2.0403H 0.013 0.100V G21J 0.085 0.177EMITTER2K 0.450 0.600CL 0.890 1.020HJDS 2.100 2.

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT4401 TRANSISTOR (NPN) SOT23 FEATURES Switching Transistor MARKING:2X MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit1. BASE VCBO Collector-Base Voltage 60 V 2. EMITTER VCEO Collector-Emitter Voltage 40 V 3. COLLECTOR VEBO Emitter-Base Vol

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4403 TRANSISTOR (PNP) FEATURES 1. BASE Switching transistor 2. EMITTER 3. COLLECTOR MARKING 2T MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base V

Zowie Technology CorporationSwitching TransistorPNP SiliconLead free productHalogen-free type33COLLECTOR11BASEMMBT4403GH22EMITTERSOT-23MAXIMUM RATINGSRating Symbol Value UnitCollector-Emitter Voltage VCEO - 40 VdcCollector-Base Voltage VCBO - 40 VdcEmitter-Base Voltage VEBO - 5.0 VdcCollector Current-Continuous IC - 600 mAdcTHERMAL CHARACTERISTICSCh

Zowie Technology CorporationSwitching TransistorNPN SiliconLead free productHalogen-free typeCOLLECTOR33BASE11MMBT4401GH22EMITTERSOT-23MAXIMUM RATINGSRating Symbol Value UnitCollector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 60 VdcEmitter-Base Voltage VEBO 6.0 VdcCollector Current-Continuous IC 600 mAdcTHERMAL CHARACTERISTICSCharacteri

MMBT4401TRANSISTOR(NPN)SOT-23 FEATURES Switching transistor 1. BASE MARKING: MMBT4401=2X 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsCollector-Base Voltage VCBO 60 VCollector-Emitter Voltage VCEO 40 VEmitter-Base Voltage VEBO 6 V Collector Current -Continuous IC 600 mAPC Collector Power dissipation

MMBT4403 TRANSISTOR (PNP) FEATURES SOT-23 Switching transistor MARKING MMBT4403=2T 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Units3. COLLECTOR VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A PC Collector Power Dissipati

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM4401MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Emitter VoltageVCEO 40 Vdc-

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM4403MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Emitter VoltageVCEO -40 Vdc-

MMBT4401 SOT-23 Transistor(NPN)1. BASE SOT-232. EMITTER 3. COLLECTOR Features Switching transistor MARKING: MMBT4401=2X MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsCollector-Base Voltage VCBO 60 V Dimensions in inches and (millimeters)VCEO Collector-Emitter Voltage 40 VEmitter-Base Voltage VEBO 6 V Collector Current -Continuou

MMBT4403 SOT-23 Transistor(NPN)1. BASE SOT-232. EMITTER 3. COLLECTOR Features Switching transistor MARKING MMBT4403=2T MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V Dimensions in inches and (millimeters)VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Contin

MMBT4401COLLECTOR3Switching Transistor NPN Silicon311BASE22SOT-23EMITTERMaximum RatingsRating Symbol Value UnitCollector-Emitter Voltage V 40 VdcCEOCollector-Base Voltage VCBO 60 VdcEmitter-Base VOltage VEBO 6.0 VdcCollector Current-Continuous IC 600 mAdcThermal CharacteristicsCharacteristics Symbol Max UnitTotal Device Dissipation FR-5 Board (1)mW

MMBT4403COLLECTOR3Switching Transistor PNP Silicon311BASE2SOT-232EMITTERM aximum R atingsRating Symbol Value UnitCollector-Emitter Voltage V -40 VdcCEOCollector-Base Voltage VCBO -40 VdcEmitter-Base VOltage VEBO -5.0 VdcCollector Current-Continuous ICmAdc-600Thermal CharacteristicsCharacteristics Symbol Max UnitTotal Device Dissipation FR-5 Board (1

FM120-M WILLASMMBT4401LT1THRUGeneral Purpose TransistorFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeaturesBatch process design, excellent power dissipation offersWe declare that the material of product compliance with RoHS requirements. better reverse leakage current and thermal resistance.

FM120-MWILLASTHRUMMBT4403WT1General Purpose TransistorsFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures BatcPNP etteh process design, excellent power dissipation offersSilicon b r reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to

FM120-M WILLASMMBT4403LT1THRUGeneral Purpose TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offersPNP Silicon better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order t

FM120-M WILLASTHRUMMBT4401WT1General Purpose Transistors FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to We declare

SOT-23 Plastic-Encapsulate TransistorsSOT-23 Plastic-Encapsulate TransistorsSOT-23 Plastic-Encapsulate TransistorsSOT-23 Plastic-Encapsulate TransistorsFEATURESFEATURESFEATURESFEATURESSwitching transistorSOT-23MARKING: MMBT4401=2XMARKING: MMBT4401=2XMARKING: MMBT4401=2XMARKING: MMBT4401=2XMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGS (TA=25 unless otherwise no

SOT-23 Plastic-Encapsulate TransistorsSOT-23 Plastic-Encapsulate TransistorsSOT-23 Plastic-Encapsulate TransistorsSOT-23 Plastic-Encapsulate TransistorsFEATURESFEATURESFEATURESFEATURESSwitching transistorMARKING MMBT4403=2TMARKING MMBT4403=2TMARKING MMBT4403=2TMARKING MMBT4403=2TSOT-23MAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGS (TA=25 unless otherwise not

MMBT4401 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features 1ESD 4kV, 400VMoisture Sensitivity Level: 1, ESD Rating: Human Body Model; 4 kV, Machine Model; 400 V. / Applications I 500mA

MMBT4403 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features 500mACollector currents up to 500 mA. / Applications General purpose amplifier and switch requiring. / Eq

MMBT4401 NPN Silicon General Purpose Transistor TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 40 VEmitter Base Voltage VEBO 6 VCollector Current Continuous IC 600 mATotal Device Dissipation FR-5 Board 1) Ptot 300 mWOThermal Resistance Junction to Ambient RJA 417 C/W

MMBT4403 PNP Silicon General Purpose Transistor . TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 40 VEmitter Base Voltage -VEBO 5 VCollector Current Continuous -IC 600 mATotal Device Dissipation FR-5 Board 1) Ptot 300 mWOThermal Resistance Junction to Ambient RJA

SMD Type orSMD Type TransistICsPNP Transistors MMBT4403W (KMBT4403W)FeaturesSwitching transistors. Collector Current Capability IC=-600mA Collector Emitter Voltage VCEO=-40V1 Emitter2 Base3 CollectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-emitter voltage VCEO -40 VCollector-base voltage VCBO -40 VEmitter-base voltage VEBO -5 V

SMD Type TransistorsNPN Transistors MMBT4401 (KMBT4401)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Ideal for Medium Power Amplification and Switching Complementary PNP Type Available (MMBT4403)1 2+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitColle

SMD Type TransistorsPNP Transistors MMBT4403 (KMBT4403)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features3 Ideal for Medium Power Amplification and Switching Complementary NPN Type Available (MMBT4401)1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitColl

MMBT4401NPN GENERAL PURPOSE SWITCHING TRANSISTORPOWER40 Volt 225 mWattVOLTAGEFEATURES0.120(3.04) NPN epitaxial silicon, planar design0.110(2.80) Collector-emitter voltage VCE = 40V Collector current IC = 600mA Lead free in compliance with EU RoHS 2011/65/EU directive0.056(1.40) Green molding compound as per IEC61249 Std. . 0.047(1.20) (Halogen Free)0

MMBT4403 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40V POWER 225mWFEATURES 0.120(3.04)0.110(2.80)PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -40V Collector current IC =-600mA 0.056(1.40)Complimentary (NPN) device: MMBT4401 0.047(1.20) Lead free in compliance with EU RoHS 2011/65/EU directive 0.079(2.00) 0.008(0.20)0.070(1.80) 0.003(0.0

GeneraI Purpose TransistorsSMD Diodes SpeciaIistMMBT4403-G (PNP)RoHS DeviceSOT-23Features0.119(3.00) -Switching transistor.0.110(2.80)30.056(1.40)0.047(1.20)Marking: 2T1 20.006(0.15)0.083(2.10)0.002(0.05)Collector0.066(1.70)30.044(1.10) 0.103(2.60)0.035(0.90) 0.086(2.20)10.006(0.15) maxBase0.020(0.50)0.007(0.20) min0.013(0.35)2

General Purpose TransistorMMBT4401-G (NPN)RoHS DeviceFeaturesSOT-23 -Switching Transistor0.118(3.00)0.110(2.80)30.055(1.40)Circuit Diagram 0.047(1.20)1 20.079(2.00)0.071(1.80)Collector30.006(0.15)0.003(0.08)0.041(1.05)0.100(2.55)10.035(0.90)Base 0.089(2.25)20.004(0.10) maxEmitter0.020(0.50)0.020(0.50) 0.012(0.30)0.012(0.30) Dimension

Product specification PNP General Purpose Transistor MMBT4403 FEATURES Pb Epitaxial planar die construction. Lead-free Complementary NPN type available (MMBT4401). Also available in lead free version. Ideal for medium power amplification and switching. MSL 1 APPLICATIONS Ideal for medium power amplification and switching. SOT-23 ORDERING INFORM

RUMW UMW MMBT4401SOT-23 Plastic-Encapsulate TransistorsMMBT4401 TRANSISTOR (NPN) SOT-23 FEATURES Switching Transistor MARKING:2X 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 60

RUMW UMW MMBT4403SOT-23 Plastic-Encapsulate TransistorsSOT-23 MMBT4403 TRANSISTOR (PNP) FEATURES 1. BASE Switching transistor 2. EMITTER 3. COLLECTOR MARKING 2T MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Curren

SOT-23 Plastic-Encapsulate TransistorsFormosa MSMMBT4401 TRANSISTOR (NPN) FEATURES Switching Transistor SOT23 MARKING:2X MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V 1. BASE VEBO Emitter-Base Voltage 6 V 2. EMITTER IC Collector Current 600 mA 3. COLLECTOR PC

SOT-23 Plastic-Encapsulate Transistors Formosa MS MMBT4403 TRANSISTOR (PNP) FEATURES Switching transistor SOT-23 MARKING 2T MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit2. EMITTER VCBO Collector-Base Voltage -40 V 3. COLLECTOR VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continu

MMBT4401 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N )SOT- 23Features Switching Transistor Marking: 2XSymbol Parameter Value Unit VCBO Collector-Base Voltage 60 V V Collector-Emitter Voltage 40 V CEOCV Emitter-Base Voltage 6 V EBOI Collector Current 600 mA CP Collector Power Dissipation 300 mW CRJA Thermal Resistance From Junction T

MMBT4403SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP )SOT- 23Features Switching Transistor Marking: 2TSymbol Parameter Value Unit VCBO Collector-Base Voltage -40 V V Collector-Emitter Voltage -40 V CEOV Emitter-Base Voltage V EBO -5 CI Collector Current -600 mA CP Collector Power Dissipation 300 mW CRJA Thermal Resistance From Juncti

MMBT4401NPN Silicon Epitaxial Planar Transistor FEATURES Epitaxial planar die construction. Complementary PNP type available: MMBT4403. Ideal for medium power amplification and switching. APPLICATIONS General purpose application, switching application. SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value UnitsCollector-Base Voltage V

MMBT4403PNP Silicon Epitaxial Planar TransistorFEATURES Epitaxial planar die construction Complementary NPN product available - MMBT4401 MSL Class 1 compatible APPLICATIONS General purpose in desktop & handheld systems Ideal for medium-power signal amplification and switching SOT-23 MAXIMUM RATING (@ T = 25 unless otherwise specified)AParameter Sym

MMBT4401TRANSISTOR (NPN) FEATURES SOT-23 Switching transistor MARKING MMBT4401=2X 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Units3. COLLECTOR VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 0.6 A PC Collector Power Dissipation 0

MMBT4403 TRANSISTOR (PNP) FEATURES SOT-23 Switching transistor MARKING MMBT4403=2T 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Units3. COLLECTOR VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A PC Collector Power Dissipati

www.msksemi.comMMBT4401Semiconductor CompianceSemiconductor CompianceFEATURES Switching TransistorMARKING:2X SOT23 1. BASE2. EMITTER3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collect

MMBT4401 NPN Transistor Features For Switching and AF Amplifer Applications. Silicon Epitaxial Chip.SOT-23 (TO-236) 1.Base 2.Emitter 3.CollectorAbsolute Maximum Ratings (T = 25) AParameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V Collector Current I 600 mA CPower Dissipation 1

Jingdao Microelectronics co.LTD MMBT4401MMBT4401SOT-23NPN TRANSISTOR3FEATURES Switching Transistor 1MAXIMUM RATINGS (Ta=25 unless otherwise noted)2SymbolParameter Value Unit1.BASECollectorBase Voltage VCBO 60 V2.EMITTERCollectorEmitter Voltage VCEO 40 V3.COLLECTOREmitterBase Voltage VEBO 6 V

Jingdao Microelectronics co.LTD MMBT4403MMBT4403SOT-23PNP TRANSISTOR3FEATURES Switching Transistor 1MAXIMUM RATINGS (Ta=25 unless otherwise noted)2SymbolParameter Value Unit1.BASECollectorBase Voltage VCBO -40 V2.EMITTERCollectorEmitter Voltage VCEO -40 V3.COLLECTOREmitterBase Voltage VEBO -

MMBT4401 SOT-23 NPN Transistors3 Features Ideal for Medium Power Amplification and Switching2 1.Base Complementary PNP Type Available (MMBT4403)2.Emitter1 3.Collector Simplified outline(SOT-23) MarkingMarking 2X Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector-base voltage VCBO 60 VCollector-emitter voltage VCEO

MMBT4403 SOT-23 PNP Transistors3 Features Ideal for Medium Power Amplification and Switching2 1.Base Complementary NPN Type Available (MMBT4401)2.Emitter1 3.Collector Simplified outline(SOT-23) Marking Marking2T Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector-base voltage VCBO -40 VCollector-emitter voltage VCEO -4

MMBT4403 TRANSI STOR (PNP)MARKING: Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: Complimentary to MMBT4401 Collector Current: Ic=0.6A Switching TransistorMAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitVCBOCollector-Base Voltage -40 VVCEOCollector-Emitter Voltage -40 VVEBOEmitter-Base Voltage -5 VICColle

MMBT4401 TRANSI STOR (NPN)MARKING: Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: Complimentary to MMBT4403 Collector Current: Ic=0.6A Switching TransistorMAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitVCBO 60 VCollector-Base VoltageVCEO 40 VCollector-Emitter VoltageVEBO 6 VEmitter-Base VoltageIC 600 mAC

MMBT3904MMBT4401AO3400SI2305MMBT4401 TRANSISTOR ( NPN) FEATURES Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT4403) Ideal for Medium Power Amplification and SwitchingSOT-23 1BASE 2EMITTER 3COLLECTOR MARKING: 2X MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsCollector-Base VoltageVCBO 60

MMBT3904MMBT4403AO3400SI2305MMBT4403 TRANSISTOR (PNP) FEATURES Epitaxial Planar Die Construction Complementary NPN Type AvailableSOT-23 (MMBT4401) Ideal for Medium Power Amplification andSwitching1BASE 2EMITTER MARKING2T 3COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 VVCE

RoHS RoHSCOMPLIANT COMPLIANTMMBT4401Q NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 High Conductance Part no. with suffix Q means AEC-Q101 qualified Applications Switching and linear amplification Mechanical Data Case: SOT-23 Terminals: Tin plated leads,

RoHS RoHSCOMPLIANT COMPLIANTMMBT4401 NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Marking: 2X Maximum Ratings (Ta=25 unless otherwise noted) Item Symbol Unit Conditions Value Collector-Base Voltage VCBO V 60 Collector

RoHS RoHSCOMPLIANT COMPLIANTMMBT4403 PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Marking: 2T Maximum Ratings (Ta=25 unless otherwise noted) Item Symbol Unit Conditions Value Collector-Base Voltage VCBO V -40Collector

TH09/2479TH97/2478 IATF 0113686SGS TH07/1033www.eicsemi.comMMBT4140 NPN Silicon General Purpose Transistor SOT-23 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 30 VEmitter Base Voltage VEBO 5 VCollector Current (DC) IC 1 APeak Collector Current ICM 2 APeak Base Current

MMBT4401 MMBT4401 SOT-23 Plastic-Encapsulate Switching Transistors (NPN) General description SOT-23 Plastic-Encapsulate Switching Transistors (NPN) FEATURES Power Dissipation of 300mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL: 94V-0 DEVICE MARKING CODE: Device Type Device Marking MMBT4401 2X Maximum Ratings & The

MMBT4403 MMBT4403 SOT-23 Plastic-Encapsulate Switching Transistors (PNP) General description SOT-23 Plastic-Encapsulate Switching Transistors (PNP) FEATURES Power Dissipation of 300mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL: 94V-0 Marking:2T Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temper

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDMMBT4401 MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter VoltageVCEO 40 Vdc-Collector-Base VoltageVCBO 60 Vdc-Emitter-Base VoltageVEBO6.0 Vdc-

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDMMBT4403 MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter VoltageVCEO -40 Vdc-Collector-Base VoltageVCBO -40 Vdc-Emitter-Base VoltageVEBO-5.0 Vdc-

MMBT4401NPN GENERAL PURPOSE SWITCHING TRANSISTOR60Volts POWER 300mWattsVOLTAGEFEATURESNPN epitaxial silicon, planar design. Collector-emitter voltage VCE=40V.Collector current IC=0.6A.ansition frequency fT>250MHz @ TrIC=20mAdc, VCE=20Vdc, f=100MHz.In compliance with ER RoHS 2002/95/EC directives.MECHANICAL DATACase: SOT-23, Plastic3Terminals: So

MMBT4403PNP TRANSISTORFEATURES Switching Transistor AMDe ea CEL1LHE1.BASE2.EMITTER3.COLLECTORSOT-23 mechanical dataUNIT A C D E HE e M L L1 aMarkingmax1.1 0.15 1.4 3.0 2.6 0.5 1.95 0.00.55 0.36mm(ref) (ref)min 0.9 0.08 1.2 2.8 2.2 0.3 1.7 0.15Type number Marking codemax43 6 55 118 102 20 77 0.022 14 MMBT4403 2Tmil(ref) (ref)min

MMBT4401BIPOLAR TRANSISTOR (NPN)FEATURES Complementary to MMBT4403 Switching Transistor Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol Value UnitCollector-Base V

MMBT4403BIPOLAR TRANSISTOR (PNP)FEATURES Complementary to MMBT4401 Switching Transistor Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol Value UnitVCBOCollector

Features ASOT-23 CDim Min MaxA0.37 0.51B CB1.20 1.40TOP VIEWB ECD 2.30 2.50EGD0.89 1.03E0.45 0.60HG1.78 2.05KH2.8

Features SOT-23 Dim Min MaxA0.37 0.51 B1.20 1.40 C 2.30 2.50 D0.89 1.03E0.45 0.60 Maximum Ratings @ T = 25