BD13003B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD13003B
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.5 W
Tensión colector-base (Vcb): 700 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 9 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 5 MHz
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: TO126
Búsqueda de reemplazo de transistor bipolar BD13003B
BD13003B Datasheet (PDF)
bd13003b.pdf
BD13003B 1.5A , 700V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-126 Power Switching Applications CLASSIFICATION OF ts Product-Rank BD13003B-A1 BD13003B-A2 ABRange 2-2.5 (s) 2.5-3 (s) EFProduct-Rank BD13003B-B1 BD13003B-B2 CNHRange 3-3.5 (s) 3.5
wbd13003d.pdf
WBD13003DWBD13003DWBD13003DWBD13003DHighVoltageFast-SwitchingNPNPowerTransistorFeaturessymbolsymbolsymbolsymbol Very High Switching Speed2.Collector High Voltage Capability Wide Reverse Bias SOA 1.Base Built-in free wheeling diode3.EmitterGeneral DescriptionThis Device is designed for high Voltage ,High speedswitching Characteristics required such
bd130.pdf
BD130NPN SILICON TRANSISTORPOWER LINERAR AND SWITCHING APPLICATIONSThe BD130 is a silicon epitaxial-base NPN transistor in JEDEC TO-3 metal case. It is intended for power switching circuits, series andshunt regulators, output stages and high fidelity amplifiers.ABSOLUTE MAXIMUM RATINGSSymbol Ratings Value UnitVCEO Collector-Emitter Voltage 60 VCollector-Base VoltageVCBO 100
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
