BD13003B Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BD13003B

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.5 W

Tensión colector-base (Vcb): 700 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 1.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 5 MHz

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO126

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BD13003B datasheet

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 bd13003b.pdf pdf_icon

BD13003B

BD13003B 1.5A , 700V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-126 Power Switching Applications CLASSIFICATION OF ts Product-Rank BD13003B-A1 BD13003B-A2 A B Range 2-2.5 ( s) 2.5-3 ( s) E F Product-Rank BD13003B-B1 BD13003B-B2 C N H Range 3-3.5 ( s) 3.5

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 wbd13003d.pdf pdf_icon

BD13003B

WBD13003D WBD13003D WBD13003D WBD13003D HighVoltageFast-SwitchingNPNPowerTransistor Features symbol symbol symbol symbol Very High Switching Speed 2.Collector High Voltage Capability Wide Reverse Bias SOA 1.Base Built-in free wheeling diode 3.Emitter General Description This Device is designed for high Voltage ,High speed switching Characteristics required such

 9.1. Size:150K  comset
 bd130.pdf pdf_icon

BD13003B

BD130 NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS The BD130 is a silicon epitaxial-base NPN transistor in JEDEC TO- 3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage 60 V Collector-Base Voltage VCBO 100

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