BD13003B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BD13003B 1.5A , 700V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-126 Power Switching Applications CLASSIFICATION OF ts Product-Rank BD13003B-A1 BD13003B-A2 ABRange 2-2.5 (s) 2.5-3 (s) EFProduct-Rank BD13003B-B1 BD13003B-B2 CNHRange 3-3.5 (s) 3.5

WBD13003DWBD13003DWBD13003DWBD13003DHighVoltageFast-SwitchingNPNPowerTransistorFeaturessymbolsymbolsymbolsymbol Very High Switching Speed2.Collector High Voltage Capability Wide Reverse Bias SOA 1.Base Built-in free wheeling diode3.EmitterGeneral DescriptionThis Device is designed for high Voltage ,High speedswitching Characteristics required such

BD130NPN SILICON TRANSISTORPOWER LINERAR AND SWITCHING APPLICATIONSThe BD130 is a silicon epitaxial-base NPN transistor in JEDEC TO-3 metal case. It is intended for power switching circuits, series andshunt regulators, output stages and high fidelity amplifiers.ABSOLUTE MAXIMUM RATINGSSymbol Ratings Value UnitVCEO Collector-Emitter Voltage 60 VCollector-Base VoltageVCBO 100