2N593
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N593
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.125
W
Tensión colector-base (Vcb): 35
V
Tensión colector-emisor (Vce): 25
V
Tensión emisor-base (Veb): 35
V
Corriente del colector DC máxima (Ic): 0.2
A
Temperatura operativa máxima (Tj): 85
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 0.12
MHz
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta:
TO5
Búsqueda de reemplazo de transistor bipolar 2N593
2N593
Datasheet (PDF)
0.1. Size:11K semelab
2n5937.pdf 
2N5937Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 160V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 30A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
0.2. Size:12K semelab
2n5935.pdf
2N5935Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 80V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 30A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a
0.3. Size:12K semelab
2n5934.pdf
2N5934Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 140V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 30A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
0.4. Size:12K semelab
2n5930.pdf
2N5930Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 120V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 30A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
0.5. Size:11K semelab
2n5933.pdf
2N5933Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 100V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 30A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
0.6. Size:11K semelab
2n5936.pdf
2N5936Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 120V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 30A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
0.7. Size:165K cn sptech
2n5935.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistors 2N5935DESCRIPTIONDC Current Gain-: h = 20-100@I = 30AFE CLow Collector Saturation Voltage-: V )= 2.0V(Max)@ I = 20ACE(sat CAPPLICATIONSDesigned for use in power switching circuits,audio amplifiers,series and shunt-regulators, driver and output stages,DC-DCconverters, inverters, and solenoid /relay dri
Otros transistores... 2N5922
, 2N5923
, 2N5924
, 2N5925
, 2N5926
, 2N5927
, 2N5928
, 2N5929
, 2N3906
, 2N5930
, 2N5931
, 2N5932
, 2N5933
, 2N5934
, 2N5935
, 2N5936
, 2N5937
.
