SMUN5234DW . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SMUN5234DW
Código: 7N
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 100 kOhm
Resistencia Base-Emisor R2 = 100 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.256 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: SOT-363
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SMUN5234DW Datasheet (PDF)
smun52xxdw.pdf
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SMUN52XXDW NPN Multi-ChipElektronische BauelementeBuilt-in Resistors TransistorThe BRT (Bias Resistor Transistor) contains a single transistorSOT-363 with a monolithic bias network consisting of two resistors; a series o.055(1.40)8 base resistor and a baseemitter resistor. These digital transistors are .047(1.20)0o .026TYP designed to replace a single device and its e
smun5311dw series.pdf
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SMUN5311DW Series NPN / PNP Digital Small Signal Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C indicates halogen-free. DESCRIPTION SOT-363 The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors
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