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SMUN5314DW . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SMUN5314DW
   Código: 14
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN*PNP
   Resistencia de Entrada Base R1 = 10 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.21

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.25 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: SOT-363
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SMUN5314DW Datasheet (PDF)

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SMUN5314DW

SMUN5311DW Series NPN / PNP Digital Small Signal Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C indicates halogen-free. DESCRIPTION SOT-363 The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors

 9.1. Size:477K  secos
smun52xxdw.pdf pdf_icon

SMUN5314DW

SMUN52XXDW NPN Multi-ChipElektronische BauelementeBuilt-in Resistors TransistorThe BRT (Bias Resistor Transistor) contains a single transistorSOT-363 with a monolithic bias network consisting of two resistors; a series o.055(1.40)8 base resistor and a baseemitter resistor. These digital transistors are .047(1.20)0o .026TYP designed to replace a single device and its e

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History: BUT33 | PBSS305ND | MPS6568 | DSC7Q01 | BC817-40 | D45VH4 | PMP5501G

 

 
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