2N5935 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5935
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 175 W
Tensión colector-base (Vcb): 90 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 30 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 30 MHz
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: TO3
Búsqueda de reemplazo de transistor bipolar 2N5935
2N5935 Datasheet (PDF)
2n5935.pdf
2N5935Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 80V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 30A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a
2n5935.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistors 2N5935DESCRIPTIONDC Current Gain-: h = 20-100@I = 30AFE CLow Collector Saturation Voltage-: V )= 2.0V(Max)@ I = 20ACE(sat CAPPLICATIONSDesigned for use in power switching circuits,audio amplifiers,series and shunt-regulators, driver and output stages,DC-DCconverters, inverters, and solenoid /relay dri
2n5937.pdf
2N5937Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 160V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 30A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
2n5934.pdf
2N5934Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 140V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 30A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
2n5930.pdf
2N5930Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 120V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 30A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
2n5933.pdf
2N5933Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 100V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 30A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
2n5936.pdf
2N5936Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 120V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 30A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
Otros transistores... 2N5928 , 2N5929 , 2N593 , 2N5930 , 2N5931 , 2N5932 , 2N5933 , 2N5934 , 2SD1047 , 2N5936 , 2N5937 , 2N5938 , 2N5939 , 2N594 , 2N5940 , 2N5941 , 2N5941T .