2SB1412 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SB1412
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 1 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 120 MHz
   Capacitancia de salida (Cc): 60 pF
   Ganancia de corriente contínua (hfe): 82
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de transistor bipolar 2SB1412

2SB1412 Datasheet (PDF)

..1. Size:107K rohm
2sb1386 2sb1412 2sb1326.pdf

2SB1386 / 2SB1412 / 2SB1326 Transistors Low frequency transistor (-20V, -5A) 2SB1386 / 2SB1412 / 2SB1326 External dimensions (Unit : mm) Features 1) Low VCE(sat). 2SB1386 2SB1412VCE(sat) = -0.35V (Typ.) 2.3+0.26.50.2-0.14.5+0.2C0.5-0.15.1+0.21.5+0.2 -0.1 0.50.1(IC/IB = -4A / -0.1A) 1.60.1 -0.12) Excellent DC current gain characteristics. 3) Compleme

..2. Size:186K utc
2sb1412.pdf

UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) ORDERING INFORMATION Ordering Number Pin Assignment Package Packing

..3. Size:255K lge
2sb1412.pdf

2SB1412(PNP) TO-251/TO-252-2L TransistorTO-2511.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Power amplifier applications MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2LSymbol Parameter Value UnitsVCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -6 V IC Collector Current Continuous -5 A PC Collector Po

..4. Size:249K wietron
2sb1412.pdf

2SB1412PNP EPITAXIAL PLANAR TRANSISTORP b Lead(Pb)-Free1.BASE32.COLLECTOR23.EMITTER 1Features:* Excellent DC Current Gain CharacteristicsD-PAK(TO-252)* Low VCE(Sat)Mechanical Data:* Case : Molded Plastic* Weight : 0.925 gramsABSOLUTE MAXIMUM RATINGS(TA=25C)Rating Symbol Value UnitVCBO-30 VCollector to Base VoltageVCEO-20 VCollector to Emitter Voltag

..5. Size:1550K kexin
2sb1412.pdf

SMD Type TransistorsPNP Transistors2SB1412TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1 Features+0.25.30-0.2 +0.80.50 -0.7 Excellent DC current gain characteristics Low VCE(SAT) VCE(SAT)= -0.35V (Typ)0.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbo

..6. Size:245K lzg
2sb1412 3ca1412.pdf

2SB1412(3CA1412) PNP /SILICON PNP TRANSISTOR Purpose: Medium power amplifier applications. :, 2SD2118(3DG2118) Features: Low V ,excellent DC current gain characteristics, complements the 2SD2118(3DG2118). CE(sat)/Absolute maximum ratings(Ta=25)

..7. Size:253K inchange semiconductor
2sb1412.pdf

isc Silicon PNP Power Transistor 2SB1412DESCRIPTIONLow collector-to-emitter saturation voltage: V = -1.0V(Max)@I = -4ACE(sat) CFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collec

0.1. Size:216K utc
2sb1412l-p 2sb1412l-q 2sb1412l-r.pdf

0.2. Size:39K kexin
2sb1412-p.pdf

SMD Type TransistorsLow Frequency Transistor2SB1412TO-252Unit: mm+0.15 +0.16.50-0.15 2.30-0.1+0.2 +0.85.30-0.2 0.50-0.7FeaturesLow VCE(sat).PNP silicon transistor.0.127+0.1 max0.80-0.1+0.12.3 0.60-0.11 Base+0.154.60-0.152 Collector3 EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -30 VCollector-emit

0.3. Size:39K kexin
2sb1412-q.pdf