A1015LT1 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: A1015LT1

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 80 MHz

Ganancia de corriente contínua (hFE): 130

Encapsulados: SOT23

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A1015LT1 datasheet

 ..1. Size:166K  wietron
 a1015lt1.pdf pdf_icon

A1015LT1

A1015LT1 A1015LT1 TRANSISTOR (PNP) * G Lead(Pb)-Free SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR Power dissipation PCM 0.2 W (Tamb=25 ) 2. 4 Collector current 1. 3 ICM -0.15 A Collector-base voltage V(BR)CBO -50 V Operating and storage junction temperature range Unit mm TJ, Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless

 0.1. Size:145K  china
 2sa1015lt1.pdf pdf_icon

A1015LT1

SEMICONDUCTOR 2SA1015LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR Package SOT-23 * Complement to 2SC1815 * Collector Current Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo -60 V Collector-Emitter Voltage Vceo -50 V PIN 1 2 3 Emitter-Base Voltage Vebo -5 V

 8.1. Size:228K  toshiba
 2sa1015l.pdf pdf_icon

A1015LT1

2SA1015(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Unit mm Low Noise Amplifier Applications High voltage and high current VCEO = -50 V (min), I = -150 mA (max) C Excellent h linearity h (2) = 80 (typ.) at V = -6 V, I = -150 mA FE FE CE C hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.)

 8.2. Size:151K  semtech
 2sa1015o 2sa1015y 2sa1015g 2sa1015l.pdf pdf_icon

A1015LT1

2SA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, L , according to its DC current gain. As complementary type the NPN transistor 2SC1815 is recommended. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit

MOSTRAR MÁS

Otros transistores... SMUN5331DW, SMUN5332DW, SMUN5333DW, SMUN5334DW, UMH13N, UMH15N, 2SB1412, 3DD13002B, BDT88, A733LT1, BC5347B, BC546C, BC846BDW, BC846BPDW, BC846CW, BC847BDW, BC847BPDW