A733LT1 Todos los transistores

 

A733LT1 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: A733LT1

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 50 MHz

Ganancia de corriente contínua (hFE): 120

Encapsulados: SOT23

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A733LT1 datasheet

 ..1. Size:1860K  wietron
a733lt1.pdf pdf_icon

A733LT1

A733LT1 COLLECTOR General Purpose Transistor 3 PNP Silicon 1 BASE 2 SOT-23 EMITTER (Ta=25 C) MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage V CEO -50 Vdc Collector-Base Voltage VCBO -60 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current -Continuous IC mAdc -150 THERMAL CHARACTERISTICS Characteristics Symbol Value Unit (1) Total Device Dissipa

 0.1. Size:706K  china
2sa733lt1.pdf pdf_icon

A733LT1

SEMICONDUCTOR 2SA733LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR Package SOT-23 * Collector Current Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo -60 V Collector-Emitter Voltage Vceo -50 V Emitter-Base Voltage Vebo -5 V PIN 1 2 3 Collector Current Ic -150

 9.1. Size:149K  semtech
mmbtsa733r mmbtsa733o mmbtsa733y mmbtsa733p mmbtsa733l.pdf pdf_icon

A733LT1

MMBTSA733 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. As complementary type the NPN transistor MMBTSC945 is recommended. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO

 9.2. Size:162K  semtech
2sa733r 2sa733o 2sa733y 2sa733p 2sa733l.pdf pdf_icon

A733LT1

2SA733 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, P and L, according to its DC current gain. As complementary type the NPN transistor 2SC945 is recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Collector 3. Base

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