MUN5316DW Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MUN5316DW  📄📄 

Código: 16

Material: Si

Polaridad de transistor: Pre-Biased-NPN*PNP

Resistencia de Entrada Base R1 = 4 kOhm

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.187 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 160

Encapsulados: SOT363

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MUN5316DW datasheet

 0.1. Size:77K  onsemi
mun5316dw1 nsbc143tpdxv6.pdf pdf_icon

MUN5316DW

MUN5316DW1, NSBC143TPDXV6 Complementary Bias Resistor Transistors R1 = 4.7 kW, R2 = 8 kW www.onsemi.com NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monoli

 0.2. Size:80K  onsemi
nsvmun5316dw1t1g.pdf pdf_icon

MUN5316DW

MUN5316DW1, NSBC143TPDXV6 Complementary Bias Resistor Transistors R1 = 4.7 kW, R2 = 8 kW http //onsemi.com NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a mon

 0.3. Size:276K  onsemi
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MUN5316DW

MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series Dual Bias Resistor Transistors http //onsemi.com http //onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network SOT-363 CASE 419B The Bias Resistor Transistor (BRT) contains a single transistor with STYLE 1 a monolithic bias network consisting of two resistors; a series base resistor and

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