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MUN5316DW . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MUN5316DW
   Código: 16
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN*PNP
   Resistencia de Entrada Base R1 = 4 kOhm

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.187 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 160
   Paquete / Cubierta: SOT363

 Búsqueda de reemplazo de transistor bipolar MUN5316DW

 

MUN5316DW Datasheet (PDF)

 0.1. Size:77K  onsemi
mun5316dw1 nsbc143tpdxv6.pdf

MUN5316DW
MUN5316DW

MUN5316DW1,NSBC143TPDXV6Complementary BiasResistor TransistorsR1 = 4.7 kW, R2 = 8 kWwww.onsemi.comNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monoli

 0.2. Size:80K  onsemi
nsvmun5316dw1t1g.pdf

MUN5316DW
MUN5316DW

MUN5316DW1,NSBC143TPDXV6Complementary BiasResistor TransistorsR1 = 4.7 kW, R2 = 8 kWhttp://onsemi.comNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a mon

 0.3. Size:276K  onsemi
mun5311dw1t1g mun5312dw1t1g mun5313dw1t1g mun5314dw1t1g mun5315dw1t1g mun5316dw1t1g mun5330dw1t1g mun5331dw1t1g mun5332dw1t1g mun5333dw1t1g mun5334dw1t1g mun5335dw1t1g.pdf

MUN5316DW
MUN5316DW

MUN5311DW1T1G,SMUN5311DW1T1G,NSVMUN5311DW1T1G SeriesDual Bias ResistorTransistorshttp://onsemi.comhttp://onsemi.comNPN and PNP Silicon Surface MountTransistors with Monolithic BiasResistor NetworkSOT-363CASE 419BThe Bias Resistor Transistor (BRT) contains a single transistor withSTYLE 1a monolithic bias network consisting of two resistors; a series baseresistor and

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