MUN5316DW . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MUN5316DW
Código: 16
Material: Si
Polaridad de transistor: Pre-Biased-NPN*PNP
Resistencia de Entrada Base R1 = 4 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.187 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 160
Paquete / Cubierta: SOT363
Búsqueda de reemplazo de transistor bipolar MUN5316DW
MUN5316DW Datasheet (PDF)
mun5316dw1 nsbc143tpdxv6.pdf
MUN5316DW1,NSBC143TPDXV6Complementary BiasResistor TransistorsR1 = 4.7 kW, R2 = 8 kWwww.onsemi.comNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monoli
nsvmun5316dw1t1g.pdf
MUN5316DW1,NSBC143TPDXV6Complementary BiasResistor TransistorsR1 = 4.7 kW, R2 = 8 kWhttp://onsemi.comNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a mon
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MUN5311DW1T1G,SMUN5311DW1T1G,NSVMUN5311DW1T1G SeriesDual Bias ResistorTransistorshttp://onsemi.comhttp://onsemi.comNPN and PNP Silicon Surface MountTransistors with Monolithic BiasResistor NetworkSOT-363CASE 419BThe Bias Resistor Transistor (BRT) contains a single transistor withSTYLE 1a monolithic bias network consisting of two resistors; a series baseresistor and
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