2N5956 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5956
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 6 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 5 MHz
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: TO66
Búsqueda de reemplazo de transistor bipolar 2N5956
2N5956 Datasheet (PDF)
2n5954 2n5955 2n5956 2n6372 2n6373 2n6374.pdf
TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com
2n5956.pdf
2N5956Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar PNP Device. 1 2VCEO = 45V IC = 6A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specif
2n5954 2n5955 2n5956.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5954 2N5955 2N5956 DESCRIPTION With TO-66 package Low collector-emitter saturation voltage Excellent safe operating area Complement to type 2N6372 2N6373 2N6374 APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 Collector
2n5954 2n5955 2n5956.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5954 2N5955 2N5956 DESCRIPTION With TO-66 package Low collector saturation voltage Excellent safe operating area Complement to type 2N6372/6373/6374 APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplifie
2n5951.pdf
September 20072N5951N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 50.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIGF Forward
2n5950.pdf
September 20072N5950N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 50.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIGF Forward
2n5952.pdf
2N5952N-Channel RF Ampifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 50.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings * TC=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIGF Forward Gate Current
2n5949 2n5950 2n5951 2n5952 2n5953.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
Otros transistores... 2N5943 , 2N5944 , 2N5945 , 2N5946 , 2N5947 , 2N595 , 2N5954 , 2N5955 , B772 , 2N5957 , 2N5958 , 2N5959 , 2N596 , 2N5960 , 2N5961 , 2N5962 , 2N5963 .
