2N5550S Todos los transistores

 ..1. Size:33K  kec
 2n5550s.pdf

SEMICONDUCTOR 2N5550S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E L B L DIM MILLIMETERS FEATURES _ + 2.93 0.20 A B 1.30+0.20/-0.15 High Collector Breakdwon Voltage C 1.30 MAX 2 VCBO=160V, VCEO=140V 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 Low Leakage Current. 1 G 1.90 H 0.95 ICBO=100nA(Max.) VCB=100V J 0.13+0.

 8.1. Size:188K  motorola
 2n5550 2n5551.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5550/D Amplifier Transistors 2N5550 NPN Silicon * 2N5551 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit CASE 29 04, STYLE 1 TO 92 (TO 226AA) Collector Emitter Voltage VCEO 140 160 Vdc Collector Base Voltage VCBO 160 180 Vdc Emitter B

 8.2. Size:53K  philips
 2n5550 2n5551 2.pdf

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors Product specification 2004 Oct 28 Supersedes data of 1999 Apr 23 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 FEATURES PINNING Low current (max. 300 mA) PIN DESCRIPTION High voltage (max. 160 V). 1 collector 2 base APPLICATIONS

 8.3. Size:329K  fairchild semi
 2n5550.pdf

AmpIifier Transistor Collector-Emitter Voltage VCEO= 140V Collector Dissipation PC (max)=625mW TO-92 1. Emitter 2. Base 3. Collector NPN EpitaxiaI SiIicon Transistor AbsoIute Maximum Ratings Ta=25 C unless otherwise noted SymboI Parameter VaIue Units VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V IC

 8.4. Size:64K  central
 2n5550 2n5551.pdf

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

 8.5. Size:88K  onsemi
 2n5550 2n5551.pdf

2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features These are Pb-Free Devices* http //onsemi.com COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector - Emitter Voltage VCEO Vdc 2N5550 140 1 2N5551 160 EMITTER Collector - Base Voltage VCBO Vdc 2N5550 160 2N5551 180 Emitter - Base Voltage VEBO 6.0 Vdc TO-92 CASE 29 Collector Curr

 8.6. Size:88K  onsemi
 2n5550g.pdf

2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features These are Pb-Free Devices* http //onsemi.com COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector - Emitter Voltage VCEO Vdc 2N5550 140 1 2N5551 160 EMITTER Collector - Base Voltage VCBO Vdc 2N5550 160 2N5551 180 Emitter - Base Voltage VEBO 6.0 Vdc TO-92 CASE 29 Collector Curr

 8.7. Size:334K  onsemi
 2n5550.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.8. Size:1609K  onsemi
 2n5550bu 2n5550ta 2n5550tar 2n5550tf 2n5550tfr.pdf

 8.9. Size:122K  secos
 2n5550.pdf

2N5550 0.6 A, 160 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES Switching and amplification in high voltage TO-92 Applications such as telephony Low current(max.600mA) High voltage(max.160V) G H J Millimeter REF. A D Min. Max. A 4.40 4.70 Collector B

 8.10. Size:206K  cdil
 2n5550.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5550 TO-92 Plastic Package High Voltage NPN Transistor For General Purpose and Telephony Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 140 V VCBO

 8.11. Size:624K  jiangsu
 2n5550.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N5550 TRANSISTOR (NPN) TO-92 FEATURES Switching and mplification in igh oltage 1.EMITTER Applications such as elephony Low urrent( ax. 600mA) 2.BASE High oltage( ax.160V) 3.COLLECTOR Equivalent Circuit 2N5550=Device code 2N Solid dot=Green molding compound device

 8.12. Size:32K  kec
 2n5550.pdf

SEMICONDUCTOR 2N5550 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C FEATURES High Collector Breakdwon Voltage N DIM MILLIMETERS VCBO=160V, VCEO=140V A 4.70 MAX E K Low Leakage Current. B 4.80 MAX G C 3.70 MAX D ICBO=100nA(Max.), VCB=100V D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 VCE(sat)=0.25V(Max.)

 8.13. Size:199K  lge
 2n5550.pdf

2N5550(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Switching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.160V) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 160 V V

 8.14. Size:152K  semtech
 2n5550 2n5551.pdf

2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors 2N5400 and 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C)

 8.15. Size:1188K  first silicon
 2n5550-1s.pdf

SEMICONDUCTOR 2N5550S TECHNICAL DATA 2N5551S High Voltage Transistors FEATURE Pb-Free package is available. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping F0 3000/Tape&Reel 2N5550S 3 F1 3000/Tape&Reel 2N5551S 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector Emitter Voltage V CEO 140 Vdc SOT 23 Collector Base Voltage V CBO 160 Vdc

 8.16. Size:1285K  sprague
 2n5419 2n5420 2n5550 2n5551 2n5830 2n5831 2n5832 2n5998 2n5999 2n6008 2n6009 2n6076 2n6426 2n6427.pdf