KTA1385L . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SEMICONDUCTOR KTA1385D/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT A I C J FEATURES DIM MILLIMETERS _ A 6.60 + 0.2 High Power Dissipation PC=1.3W(Ta=25 ) _ B 6.10 + 0.2 _ C 5.0 + 0.2 Complementary to KTC5103D/L _ D 1.10 + 0.2 _ E 2.70 + 0.2 _ F 2.30 + 0.1 H 1.00 MAX _ I 2.30 + 0.2 _ J 0.5 + 0.1 _ H K 2.00 +

SEMICONDUCTOR KTA1381 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH-DEFINITION CRT DISPLAY, A B VIDEO OUTPUT APPLICATIONS. D C E FEATURES F High breakdown voltage VCEO 300V. Small reverse transfer capacitance and G excellent high frequency characteristic. H Cre=2.3pF (VCB=30V, f=1MHz) DIM MILLIMETERS J A 8.3 MAX Complementary KTC3503. K B 5.8 L C 0.7 _ +

SEMICONDUCTOR KTA1360 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR AUDIO FREQUENCY AMPLIFIER APPLICATION. A B D C E FEATURES F High Voltage VCEO=-150V. Low Output Capacitance Cob=5.0pF(Max.). G High Transition Frequency fT=120MHz(Typ.) H Complementary to KTC3423. DIM MILLIMETERS J A 8.3 MAX K B 5.8 L C 0.7 _ + D 3.2 0.1 E 3.5 _ + F 11.0 0.3 MAXIMUM RATIN