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KTA1725 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KTA1725
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 30 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 6 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 20 MHz
   Capacitancia de salida (Cc): 150 pF
   Ganancia de corriente contínua (hfe): 55
   Paquete / Cubierta: TO220IS

 Búsqueda de reemplazo de transistor bipolar KTA1725

 

KTA1725 Datasheet (PDF)

 ..1. Size:449K  kec
kta1725.pdf

KTA1725
KTA1725

SEMICONDUCTOR KTA1725TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH POWER AMPLIFIER APPLICATION. ACFEATURES DIM MILLIMETERSSComplementary to KTC4511._A 10.0 + 0.3_+B 15.0 0.3EC _2.70 0.3+D 0.76+0.09/-0.05_E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+J 13.6 0.5L LRK _3.7 0.2+LMAXIMUM RATING (Ta=25 ) 1.2+0.25/-

 9.1. Size:409K  kec
kta1715.pdf

KTA1725
KTA1725

SEMICONDUCTOR KTA1715TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORPOWER AMPLIFIER APPLICATION.ABPOWER SWITCHING APPLICATION.DCEFEATURESFLow Collector Saturation Voltage: VCE(sat)=-0.5V(Max.) (IC=-1A)GHigh Speed Switching Time : tstg=1 S(Typ.)HComplementary to KTC2814.DIM MILLIMETERSJA 8.3 MAXKB 5.8LC 0.7_+D 3.2 0.1E 3.5_+F 11.0 0.3

 9.2. Size:392K  kec
kta1709.pdf

KTA1725
KTA1725

SEMICONDUCTOR KTA1709TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSTROBO FLASH APPLICATION.ABHIGH CURRENT APPLICATION.DCEFEATURESFhFE=100 320 (VCE=-2V, IC=-0.5A).Low Collector Saturation Voltage. G: VCE(sat)=-0.5V (IC=-3A, IB=-75mA). HDIM MILLIMETERSJA 8.3 MAXKB 5.8LC 0.7_+D 3.2 0.1MAXIMUM RATING (Ta=25 )E 3.5_+F 11.0 0.3CHARACTER

 9.3. Size:392K  kec
kta1705.pdf

KTA1725
KTA1725

SEMICONDUCTOR KTA1705TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORAUDIO AMPLIFIER, VOLTAGE REGULATOR ABDC-DC CONVERTER, RELAY DRIVERDCEFEATURESFLow Saturation Voltage.: VCE(sat) -0.8V (IC=-2A, IB=-0.2A)GExcellent hFE Linearity and high hFE. H: hFE:70 240 (VCE=-2V, IC=-0.5A)DIM MILLIMETERSJA 8.3 MAXComplementary to KTC2804.KB 5.8LC 0.7_+D

 9.4. Size:28K  kec
kta1759.pdf

KTA1725
KTA1725

SEMICONDUCTOR KTA1759TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION. FEATURES High Breakdown Voltage.ACHGDIM MILLIMETERSA 4.70 MAX_+B 2.50 0.20MAXIMUM RATING (Ta=25)C 1.70 MAXDDD 0.45+0.15/-0.10CHARACTERISTIC SYMBOL RATING UNITKE 4.25 MAX_+F F F 1.50 0.10VCBO -400 VCollector-Base VoltageG 0.40 TYPH 1.75 MAXVC

 9.5. Size:391K  kec
kta1703.pdf

KTA1725
KTA1725

SEMICONDUCTOR KTA1703TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION.ABDC-DC CONVERTER.DCLOW POWER SWITCHING REGULATOR.EFFEATURES High Breakdown Voltage. G: VCEO=-400VHLow Collector Saturation Voltage DIM MILLIMETERSJA 8.3 MAX: VCE(sat)=-1V(max.), (IC=-100mA, IB=-10mA)KB 5.8LHigh Speed Switching. C 0.7_+D 3.2 0.1E

 9.6. Size:413K  kec
kta1718d l.pdf

KTA1725
KTA1725

SEMICONDUCTOR KTA1718D/LTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORPOWER AMPLIFIER APPLICATION.POWER SWITCHING APPLICATION.AI C JFEATURESDIM MILLIMETERS_A 6.60 + 0.2_Low Collector Saturation Voltage B 6.10 + 0.2_C 5.0 + 0.2_: VCE(sat)=-0.5V(Max.) (IC=-1A) D 1.10 + 0.2_E 2.70 + 0.2_F 2.30 + 0.1High Speed Switching Time : tstg=1 S(Typ.)H 1.00 MAX

 9.7. Size:396K  kec
kta1704.pdf

KTA1725
KTA1725

SEMICONDUCTOR KTA1704TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORAUDIO FREQUENCY POWER AMPLIFIERABHIGH FREQUENCY POWER AMPLIFIER DCEFEATURESFComplementary to KTC2803.GHDIM MILLIMETERSJA 8.3 MAXMAXIMUM RATING (Ta=25 )KB 5.8LC 0.7CHARACTERISTIC SYMBOL RATING UNIT_+D 3.2 0.1E 3.5VCBO -120 VCollector-Base Voltage_+F 11.0 0.3G 2.9 M

 9.8. Size:82K  kec
kta1700.pdf

KTA1725
KTA1725

SEMICONDUCTOR KTA1700TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION. ABDCFEATURESEHigh Transition Frequency : fT=100MHz(Typ.).FComplementary to KTC2800. GHDIM MILLIMETERSJA 8.3 MAXMAXIMUM RATING (Ta=25 )KB 5.8LC 0.7CHARACTERISTIC SYMBOL RATING UNIT_+D 3.2 0.1E 3.5VCBO -160 VCollector-Base Voltage_+F 11.0 0.3

 9.9. Size:214K  inchange semiconductor
kta1700.pdf

KTA1725
KTA1725

isc Silicon PNP Power Transistor KTA1700DESCRIPTIONHigh Collector-Emitter Breakdown VoltageV = -160V(Min)CEOComplement to Type KTC2800Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -160 VCBO

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SC2143 | 3CA168

 

 
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History: 2SC2143 | 3CA168

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