2N5961 Todos los transistores

 

2N5961 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N5961

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.625 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 8 V

Corriente del colector DC máxima (Ic): 0.05 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 4 pF

Ganancia de corriente contínua (hFE): 150

Encapsulados: TO92

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2N5961 datasheet

 ..1. Size:295K  fairchild semi
 2n5961.pdf pdf_icon

2N5961

Discrete POWER & Signal Technologies 2N5961 C TO-92 B E NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Val60ue Units VCEO Collector-Emitter Volta

 ..2. Size:62K  central
 2n5961 2n5962 2n5963.pdf pdf_icon

2N5961

Tel (631) 435-1110 Fax (631) 435-1824 www. cent ral semi . com

 9.1. Size:469K  fairchild semi
 2n5962 mmbt5962.pdf pdf_icon

2N5961

Discrete POWER & Signal Technologies 2N5962 MMBT5962 C E C TO-92 B B E SOT-23 Mark 117 NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value U

Otros transistores... 2N5954 , 2N5955 , 2N5956 , 2N5957 , 2N5958 , 2N5959 , 2N596 , 2N5960 , TIP31 , 2N5962 , 2N5963 , 2N5964 , 2N5965 , 2N5966 , 2N5967 , 2N5968 , 2N5969 .

History: CMBT4123

 

 

 

 

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