KTA711T . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KTA711T
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.9 W
Tensión colector-base (Vcb): 35 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Capacitancia de salida (Cc): 13 pF
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta: TS6
- Selección de transistores por parámetros
KTA711T Datasheet (PDF)
kta711t.pdf

SEMICONDUCTOR KTA711TTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. EK B KFEATURES DIM MILLIMETERSExcellent hFE Linearity _A 2.9 + 0.216B 1.6+0.2/-0.1: hFE(2)=25(Min.) at VCE=-6V, IC=-400mA._C 0.70 + 0.052 5_+D 0.4 0.1Complementary to KTC811T.E 2.8+0.2/-0.3_F 1.9 + 0.23 4G 0.95_H 0.16 + 0.05I
kta711e.pdf

SEMICONDUCTOR KTA711ETECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. BB1FEATURESA super-minimold package houses 2 transistor.1 6 DIM MILLIMETERSExcellent temperature response between these 2 transistor. _A 1.6 + 0.05_A1 1.0 + 0.05High pairing property in hFE. 52_B 1.6 + 0.05_B1 1.2 + 0.05The follwing characteri
kta711u.pdf

SEMICONDUCTOR KTA711UTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.BFEATURESB1A super-minimold package houses 2 transistor.DIM MILLIMETERS1 6_Excellent temperature response between these 2 transistor. A 2.00 + 0.20_2 5 A1 1.3 + 0.1High pairing property in hFE._B 2.1 + 0.13 4 D _B1 1.25 + 0.1The follwing char
kta712u.pdf

SEMICONDUCTOR KTA712UTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.BFEATURESB1A super-minimold package houses 2 transistor.DIM MILLIMETERS1 6_Excellent temperature response between these 2 transistor. A 2.00 + 0.20_2 5 A1 1.3 + 0.1High pairing property in hFE._B 2.1 + 0.13 4 D _B1 1.25 + 0.1The follwing char
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: KT379B | TSD882CK | GS9014B | GN4F3R | K129NT1E-1 | DC5422 | 2S168
History: KT379B | TSD882CK | GS9014B | GN4F3R | K129NT1E-1 | DC5422 | 2S168



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