KTB1241 Datasheet. Equivalente

 ..1. Size:77K  kec
 ktb1241.pdf

SEMICONDUCTOR KTB1241 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. B D FEATURE High Breakdown Voltage and High Current VCEO=-80V, IC=-1A. DIM MILLIMETERS P Low VCE(sat) DEPTH 0.2 A 7.20 MAX Complementary to KTD1863. B 5.20 MAX C C 0.60 MAX S D 2.50 MAX Q E 1.15 MAX K F 1.27 G 1.70 MAX H 0.55 MAX FF _ MAXIMUM RATING (Ta=25 ) J 14.00 +

 9.1. Size:81K  kec
 ktb1260.pdf

SEMICONDUCTOR KTB1260 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES A C 1W (Mounted on Ceramic Substrate). H Small Flat Package. G Complementary to KTD1898. DIM MILLIMETERS A 4.70 MAX D _ + D B 2.50 0.20 K C 1.70 MAX D 0.45+0.15/-0.10 MAXIMUM RATING (Ta=25 ) F F E 4.25 MAX _ + F 1.50 0.10 CHARACTERISTIC SYMBOL RATING UNIT G 0.40

 9.2. Size:42K  kec
 ktb1234t.pdf

SEMICONDUCTOR KTB1234T TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR DRIVER APPLICATIONS. FEATURES E B AF amplifier, solenoid drivers, LED drivers. K DIM MILLIMETERS Darlington connection. _ A 2.9 + 0.2 B 1.6+0.2/-0.1 High DC current gain. _ C 0.70 + 0.05 2 3 Very small-sized package permitting sets to be made _ D 0.4 + 0.1 E 2.8+0.2/-0.3 smaller and slimer. _ F 1.9 + 0