KTC3245 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SEMICONDUCTOR KTC3245TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH VOLTAGE APPLICATION.B CFEATURES High Breakdown Voltage. Collector Power Dissipation : PC=625mW.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDMAXIMUM RATING (Ta=25 )D 0.45E 1.00CHARACTERISTIC SYMBOL RATING UNITF 1.27G 0.85VCBOCollector-Base Voltage 400 V H 0.45_HJ 14.00

MCCTM Micro Commercial Components20736 Marilla Street ChatsworthKTC3205Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesNPN Power Dissipation: 1W (Tamb=25 ) Collector Current: 2APlastic-Encapsulate Collector-base Voltage: 30V Epoxy meets UL 94 V-0 flammability ratingTransistor Moisture Sensitivity Level 1 Ma

KTC3265 0.8A , 35V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE A High DC current gain L Complementary to KTA1298 33Top View C B11 22K ECLASSIFICATION OF hFE DProduct-Rank KTC3265-O KTC3265-Y H JF GRange 100~200 160~320 Marking Code EO EY

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors KTC3202 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER General Purpose Application Switching Application 2. COLLECTOR 3. BASE Equivalent Circuit

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 KTC3265 TRANSISTOR (NPN) FEATURES 1. BASE 2. EMITTER 3. COLLECTOR High DC current gain Complementary to KTA1298 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 35 VVCEO Collector-Emitter Voltage 30 VVEBO E

SEMICONDUCTOR KTC3227TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. B DFEATURES Complementary to KTA1274.DIM MILLIMETERSPDEPTH:0.2A 7.20 MAXB 5.20 MAXCC 0.60 MAXSMAXIMUM RATING (Ta=25 )D 2.50 MAXQE 1.15 MAXKCHARACTERISTIC SYMBOL RATING UNITF 1.27G 1.70 MAXVCBOCollector-Base Voltage 80 V H 0.55 MAXFF_J 14.00 + 0.50

SEMICONDUCTOR KTC3204TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. FEATURES BComplementary to KTA1272.DIM MILLIMETERSOA 3.20 MAXHM B 4.30 MAXC 0.55 MAXMAXIMUM RATING (Ta=25)_D 2.40 + 0.15E 1.27CHARACTERISTIC SYMBOL RATING UNITF 2.30C_+G 14.00 0.50VCBO Collector-Base Voltage 35 VH 0.60 MAXJ 1.05E EVCEOCollecto

SEMICONDUCTOR KTC3203TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. B CFEATURES Complementary to KTA1271.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXMAXIMUM RATING (Ta=25) GC 3.70 MAXDD 0.45CHARACTERISTIC SYMBOL RATING UNITE 1.00F 1.27VCBO Collector-Base Voltage 35 VG 0.85H 0.45VCEOCollector-Emitter Voltage 30 V_HJ 14.

SEMICONDUCTOR KTC3266TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORPOWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION.B CFEATURES Low Saturation Voltage. : VCE(sat)=0.5V(Max.) at IC=2AN DIM MILLIMETERS Complementary to KTA1296. A 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85MAXIMUM RATING (Ta=25 )H 0.45_HJ 14.00 + 0.50CHARACTE

SEMICONDUCTOR KTC3200TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORLOW NOISE AUDIO AMPLIFIER APPLICATION.B CFEATURESThe KTC3200 is a transistor for low frequency and low noise applications.This device is designed to ower noise figure in the region of low signalsource impedance, and to lower the pulse noise. N DIM MILLIMETERSThis is recommended for the first stages of equalizer

SEMICONDUCTOR KTC3295TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORLOW NOISE AMPLIFIER APPLICATION. FEATUREEL B LHigh hFE : hFE=6003600.DIM MILLIMETERSNoise Figure : 0.5dB(Typ.) at f=100Hz._+2.93 0.20AB 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95MAXIMUM RATING (Ta=25)J 0.13+0.10/-0.05K 0.00 ~ 0.10CHARACTER

SEMICONDUCTOR KTC3226TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSTROBO FLASH APPLICATION.HIGH CURRENT APLICATION.B DFEATURES High DC Current Gain and Excellent hFE LinearityDIM MILLIMETERSP: hFE(1)=140 600 (VCE=1V, IC=0.5A)DEPTH:0.2A 7.20 MAX: hFE(2)=70(Min.), 200(Typ.) (VCE=1V, IC=2A). B 5.20 MAXCC 0.60 MAXS Low Saturation Voltage D 2.50 MAXQE 1.15 MAX

SEMICONDUCTOR KTC3228TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORCOLOR TV VERT. DEFELECTION OUTPUT APPLICATION.COLOR TV CLASS B SOUND OUTPUT APPLICATION.FEATURES High Voltage : VCEO=160V.Large Continuous Collector Current Capability.Recommended for Vert. Deflection Output & Sound OutputApplications for Line Operated TV.Complementary to KTA1275._+_+MAXIMUM R

SEMICONDUCTOR KTC3203ATECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. FEATURES B CComplementary to KTA1271AN DIM MILLIMETERSA 4.70 MAXMAXIMUM RATING (Ta=25) EKB 4.80 MAXGC 3.70 MAXCHARACTERISTIC SYMBOL RATING UNIT DD 0.45E 1.00VCBO Collector-Base Voltage 35 VF 1.27G 0.85VCEOCollector-Emitter Voltage 30 VH 0.45_HJ 14.

SEMICONDUCTOR KTC3210TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. B CFEATURES Complementary to KTA1282.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXMAXIMUM RATING (Ta=25 ) GC 3.70 MAXDCHARACTERISTIC SYMBOL RATING UNIT D 0.45E 1.00F 1.27VCBOCollector-Base Voltage 30 VG 0.85H 0.45VCEOCollector-Emitter Voltage 30 V_HJ 14.00 + 0

SEMICONDUCTOR KTC3207TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH VOLTAGE SWITCHING APPLICATION.COLOR TV HORIZONTAL DIRVER APPLICATION.B DCOLOR TV CHROMA OUTPUT APPLICATION.FEATURESDIM MILLIMETERSPHigh Voltage : V(BR)CEO=300V.DEPTH:0.2A 7.20 MAXSmall Collector Output Capacitance : Cob=3.0pF(Typ.). B 5.20 MAXCC 0.60 MAXSD 2.50 MAXQE 1.15 MAXKF 1.27G

SEMICONDUCTOR KTC3207TTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH VOLTAGE SWITCHING APPLICATION.COLOR TV HORIZONTAL DRIVER APPLICATION.COLOR TV CHROMA OUTPUT APPLICATION.EBKDIM MILLIMETERSFEATURES_A 2.9 + 0.2B 1.6+0.2/-0.1High Voltage : V(BR)CEO=300V_C 0.70 + 0.0523Small Collector Output Capacitance : Cob=3.0pF(Typ.) _D 0.4 + 0.1E 2.8+0.2/-0.3Comp

SEMICONDUCTOR KTC3202TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. B CFEATURESExcellent hFE Linearity: hFE(2)=25(Min.) at VCE=6V, IC=400mA.N DIM MILLIMETERSComplementary to KTA1270.A 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85MAXIMUM RATING (Ta=25 )H 0.45_HJ 14.00 + 0.50CHARACTERI

SEMICONDUCTOR KTC3209TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORPOWER AMPLIFIER APPLICATIONS.POWER SWITCHING APPLICATIONS. FEATURESLow Collector Saturation Voltage : VCE(sat)=0.5V(Max.) (IC=1A)High Speed Switching Time : tstg=1.0 S(Typ.)Complementary to KTA1281.MAXIMUM RATING (Ta=25 )CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage 50 VVCEOCollector-Emi

SEMICONDUCTOR KTC3205TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION.B DFEATURES Complementary to KTA1273.DIM MILLIMETERSPDEPTH:0.2A 7.20 MAXB 5.20 MAXCC 0.60 MAXSMAXIMUM RATING (Ta=25 )D 2.50 MAXQE 1.15 MAXKCHARACTERISTIC SYMBOL RATING UNITF 1.27G 1.70 MAXVCBOCollector-Base Voltage 30 V H 0.55 MAXFF_J 14.00 + 0.50VCE

SEMICONDUCTOR KTC3265TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORLOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. EL B LFEATURES DIM MILLIMETERS High DC Current Gain : hFE=100 320. _+2.93 0.20AB 1.30+0.20/-0.15 Low Saturation VoltageC 1.30 MAX2: VCE(sat)=0.4V(Max.) (IC=500mA, IB=20mA). 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.20 Suitable f

SEMICONDUCTOR KTC3211TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. B CFEATURE Complementary to KTA1283.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXMAXIMUM RATING (Ta=25 ) GC 3.70 MAXDCHARACTERISTIC SYMBOL RATING UNIT D 0.45E 1.00F 1.27VCBOCollector-Base Voltage 40 VG 0.85H 0.45VCEOCollector-Emitter Voltage 25 V_HJ 14.00 + 0.

SEMICONDUCTOR KTC3206TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORBLACK AND WHITE TV VIDEO OUTPUT APLICATION. HIGH VOLTAGE SWITCHING APPLICATION.B DFEATURESHigh Breakdown Voltage : VCEO=150V(Min.).DIM MILLIMETERSPLow Output Capacitance : Cob=5.0pF(Max.).DEPTH:0.2A 7.20 MAXHigh Transition Frequency : fT=120MHz(Typ.). B 5.20 MAXCC 0.60 MAXSD 2.50 MAXQE 1.15 MA

SEMICONDUCTOR KTC3229TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORCOLOR TV CHROMA OUTPUT APPLICATION.ACFEAUTRESDIM MILLIMETERSSHigh Voltage : VCEO=300V._A 10.0 + 0.3_+B 15.0 0.3ESmall Collector Output Capacitance : Cob=4.0pF(Max.).C _2.70 0.3+D 0.76+0.09/-0.05_E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+J 13.6 0.5L LMA

KTC3205 TRANSISTOR (NPN) TO-92L 1. EMITTER FEATURES 2. COLLECTOR Complementary to KTA1273 3. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units 1 2 3 VCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 2 A PC Collector Power Dissipation 1 W TJ Juncti

KTC3265 TRANSISTOR (NPN) SOT-23 FEATURES 1. BASE 2. EMITTER High DC current gain 3. COLLECTOR Complementary to KTA1298 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 35 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 800 mA PC Collector Power Dissipat

KTC3203(NPN)TO-92 TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Complementary to KTA1271 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 800 mA PC 625 mWCollector Power Dissipation Dimen

KTC3205 TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 4.700 2 3 5.1001Features7.800 8.200 Complementary to KTA1273 0.6000.800MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units 0.3500.55013.800VCBO Collector-Base Voltage 30 V14.200VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collec

KTC3202(NPN)TO-92 TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features General purpose application switching application MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value UnitsVCBO Collector-Base Voltage 35 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 500 mAPC 625 mWCollector Po

KTC3265 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features High DC current gain: hFE=100-320 Complementary to KTA1298 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 35 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 V IC Collec

KTC3206 TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 4.7005.100 2 3 1Features7.800 High Breakdown Voltage : VCEO=150V(Min.) 8.200 Low Output Capacitance : Cob=5.0pF(Max.) 0.600High Transition Frequency : fT=120MHz(Typ.). 0.8000.3500.550MAXIMUM RATINGS (TA=25 unless otherwise noted) 13.80014.200Symbol Value Units Parameter

KTC3265NPN General Purpose Transistors3P b Lead(Pb)-Free12SOT-23MAXIMUM RATINGS(Ta=25C)Rating Symbol Value UnitCollector-Emitter Voltage30VCEOVVCBOCollector-Base Voltage 35 VVEBOEmitter-Base Voltage 5.0 VICCollector Current - Continuous 800 mATotal Device DissipationPD200 mWTA=25CTj CJunction Temperature +150TstgStorage Temperature -55 t

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 KTC3265 TRANSISTOR (NPN) FEATURES 1. BASE 2. EMITTER 3. COLLECTOR High DC current gain Complementary to KTA1298 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 35 VVCEO Collector-Emitter Voltage 30 VVEBO Emit

KTC3200 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features h ,FELow noise, high hFE, high breakdown voltage. / Applications Low noise audio amplifier application. / Equivalent Ci

KTC3228 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features KTA1275 High voltage, complementary to KTA1275. / Applications ,Color TV vertical deflection output, color TV class B s

KTC3205T(BR3DG3205T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features KTA1273T(BR3CG1273T)Complementary pair with KTA1273T(BR3CG1273T). / Applications High current application. / Equivalent Circuit

DIP Type TransistorsNPN TransistorsKTC3202Unit:mmTO-924.8 0.3 3.8 0.3 Features Excellent hFE Linearity Complementary to KTA12700.60 Max0.45 0.1 0.521 31.Emitter2.Collector1.272.54 3.Base Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 Collector - Emitter Voltage VCEO 30 V Emitter -

DIP Type TransistorsNPN TransistorsKTC3209TO-92LUnit:mm4.9 0.20.7 0.1 Features Low Saturation Voltage0.45 0.1 High Speed Switching Time Complementary to KTA128121 31.27 2.54 0.11.60 (max)Emitter1.2.Collector3.Base4.0(min) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50

SMD Type TransistorsNPN TransistorsKTC3265SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features High DC Current Gain Low Saturation Voltage1 2 Small Package+0.10.95-0.1 0.1+0.05-0.01+0.11.9-0.1 Complementary to KTA12981.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Vol

DIP Type TransistorsNPN TransistorsKTC3206TO-92LUnit:mm4.9 0.2 Features0.7 0.1 High Breakdown Voltage High Transition Frequency0.45 0.1 Complementary to KTA102421 31.27 2.54 0.11.60 (max)Emitter1.2.Collector3.Base4.0(min) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 200

KTC3209(3DA3209) NPN /SILICON NPN TRANSISTOR :,/Purpose: Power amplifier and switching applications. :,, KTA1281(3CA1281) Features: Low saturation voltage, high speed switching time, complementary to KTA1281(3CA1281). /Absolute maximum ratings(Ta=25)

Plastic-Encapsulate TransistorsFEATURESHigh DC current gainKTC3265(NPN)Complementary to KTA1298MAXIMUM RATINGS (TA=25 unless otherwise noted)Parameter Symbol Value UnitVCBOCollector-Base Voltage 35 VVCEOCollector-Emitter Voltage 30 VVEBOEmitter-Base Voltage 5 VIC 1. BASECollector Current -Continuous 800 mACollector Power Dissipation PC 200 mW 2. EMITTER SOT-233.

isc Silicon NPN Power Transistor KTC3229DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV chroma output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN