KTC3730U . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: KTC3730U
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.1 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 11 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 3200 MHz
   Capacitancia de salida (Cc): 0.8 pF
   Ganancia de corriente contínua (hfe): 56
   Paquete / Cubierta: USM

Búsqueda de reemplazo de transistor bipolar KTC3730U

KTC3730U Datasheet (PDF)

..1. Size:36K kec
ktc3730u.pdf

SEMICONDUCTOR KTC3730UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.EFEATURESM B MDIM MILLIMETERSLow Noise Figure, High Gain._A 2.00 0.20+DSmall rbbCc (Typ. 4pS). 2 _+B 1.25 0.15_C 0.90 0.10+1 3D 0.3+0.10/-0.05_+E 2.10 0.20G 0.65H 0.15+0.1/-0.06J 1.30MAXIMUM RATING (Ta=25)K 0.00-0.10L 0.70

7.1. Size:75K kec
ktc3730v.pdf

SEMICONDUCTOR KTC3730VTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.EFEATURESBLow Noise Figure, High Gain.Small rbbCc (Typ. 4pS).DIM MILLIMETERS2_A 1.2 +0.05_B 0.8 +0.0513_C 0.5 + 0.05_+D 0.3 0.05_E 1.2 + 0.05MAXIMUM RATING (Ta=25 ) _G 0.8 + 0.05H 0.40P PCHARACTERISTIC SYMBOL RATING UNIT _J 0.12 +

7.2. Size:701K kec
ktc3730f.pdf

SEMICONDUCTOR KTC3730FTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.FEATURESELow Noise Figure, High Gain.BSmall rbb Cc (Typ. 4pS).DIM MILLIMETERS2_A 0.6 + 0.053 _+B 0.8 0.05C 0.38+0.02/-0.041MAXIMUM RATING (Ta=25)_+D 0.2 0.05_+E 1.0 0.05CHARACTERISTIC SYMBOL RATING UNIT_+G 0.35 0.05_+J 0.1

9.1. Size:38K kec
ktc3708u.pdf

SEMICONDUCTOR KTC3708UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHigh frequency amplifier transistor, RF switching application.EFEATURESM B MDIM MILLIMETERSVery low on resistance (RON)._A 2.00 0.20+D2Low capacitance. _+B 1.25 0.15_C 0.90 + 0.1031D 0.3+0.10/-0.05_+E 2.10 0.20G 0.65H 0.15+0.1/-0.06J 1.30MAXIMUM RATING (Ta=25 )K 0.00-0.10

9.2. Size:84K kec
ktc3770t.pdf

SEMICONDUCTOR KTC3770TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.EBFEATURES KDIM MILLIMETERSLow Noise Figure, High Gain._A 2.9 + 0.2B 1.6+0.2/-0.1NF=1.1dB, |S21e|2=11dB (f=1GHz)._C 0.70 + 0.0523_D 0.4 + 0.1E 2.8+0.2/-0.3_F 1.9 + 0.21G 0.95_H 0.16 + 0.05MAXIMUM RATING (Ta=25 )I 0.00-0.10J 0.25+0.25/-

9.3. Size:83K kec
ktc3770u.pdf

SEMICONDUCTOR KTC3770UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.EFEATURESM B MDIM MILLIMETERSLow Noise Figure, High Gain._A 2.00 0.20+D2NF=1.1dB, |S21e|2=11dB (f=1GHz). _+B 1.25 0.15_C 0.90 + 0.1031D 0.3+0.10/-0.05_+E 2.10 0.20G 0.65H 0.15+0.1/-0.06J 1.30MAXIMUM RATING (Ta=25 )K 0.00-0.10L 0.70

9.4. Size:81K kec
ktc3770v.pdf

SEMICONDUCTOR KTC3770VTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.EFEATURESBLow Noise Figure, High Gain.NF=1.1dB, |S21e|2=11dB (f=1GHz).DIM MILLIMETERS2_A 1.2 + 0.05_B 0.8 + 0.0513_C 0.5 + 0.05_D 0.3 + 0.05_E 1.2 + 0.05MAXIMUM RATING (Ta=25 ) _G 0.8 + 0.05H 0.40P P_J 0.12 + 0.05CHARACTERISTIC SYMBO

9.5. Size:75K kec
ktc3790u.pdf

SEMICONDUCTOR KTC3790UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.EFEATURESM B MDIM MILLIMETERSLow Noise Figure, High Gain._A 2.00 0.20+D2NF=1.2dB, |S21e|2=13dB (f=1GHz). _+B 1.25 0.15_C 0.90 + 0.1031D 0.3+0.10/-0.05_+E 2.10 0.20G 0.65H 0.15+0.1/-0.06J 1.30MAXIMUM RATING (Ta=25 )K 0.00-0.10L 0.70

9.6. Size:501K kec
ktc3770ul.pdf

SEMICONDUCTOR KTC3770ULTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.FEATURES C1 4Low Noise Figure, High Gain.NF=1.1dB, |S21e|2=11dB (f=1GHz).ADIM MILLIMETERS_A 1.0 0.05+_B +0.6 0.052 +0.02 3C 0.36- 0.03B_D 0.25 + 0.03_E 0.15 + 0.03MAXIMUM RATING (Ta=25 ) _F 0.65 + 0.03H2 3 _G 0.35 + 0.03CHARACTERI

9.7. Size:30K kec
ktc3780u.pdf

SEMICONDUCTOR KTC3780UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.EFEATURESM B MDIM MILLIMETERSLow Noise Figure, High Gain._A 2.00 0.20+DNF=1.4dB, |S21e|2=12dB (f=1GHz). 2 _+B 1.25 0.15_C 0.90 + 0.101 3D 0.3+0.10/-0.05_+E 2.10 0.20G 0.65H 0.15+0.1/-0.06J 1.30MAXIMUM RATING (Ta=25)K 0.00-0.10L

9.8. Size:91K kec
ktc3770f.pdf

SEMICONDUCTOR KTC3770FTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.FEATURESELow Noise Figure, High Gain.BNF=1.1dB, |S21e|2=11dB (f=1GHz).DIM MILLIMETERS2_A 0.6 + 0.053 _+B 0.8 0.05C 0.38+0.02/-0.041MAXIMUM RATING (Ta=25)_+D 0.2 0.05_+E 1.0 0.05CHARACTERISTIC SYMBOL RATING UNIT_+G 0.35 0.05_

9.9. Size:438K kec
ktc3770s.pdf

SEMICONDUCTOR KTC3770STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.EL B LFEATURESDIM MILLIMETERSLow Noise Figure, High Gain._+A 2.93 0.20B 1.30+0.20/-0.15NF=1.1dB, |S21e|2=11dB (f=1GHz).C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95J 0.13+0.10/-0.05K 0.00 ~ 0.10MAXIMUM RATING (Ta=25 )L 0.55P P

9.10. Size:490K kec
ktc3790s.pdf

SEMICONDUCTOR KTC3790STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.FEATURESELow Noise Figure, High Gain.L B LNF=1.2dB, |S21e|2=13dB (f=1GHz). DIM MILLIMETERS_+A 2.93 0.20B 1.30+0.20/-0.15C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30/-0.201G 1.90MAXIMUM RATING (Ta=25 )H 0.95J 0.13+0.10/-0.05CHARACTERISTIC SYMBOL RATIN

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: KTA1725 | 2SC2143 | 3CA168

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